KR940001458A - 전계효과 트랜지스터 - Google Patents

전계효과 트랜지스터 Download PDF

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Publication number
KR940001458A
KR940001458A KR1019930009886A KR930009886A KR940001458A KR 940001458 A KR940001458 A KR 940001458A KR 1019930009886 A KR1019930009886 A KR 1019930009886A KR 930009886 A KR930009886 A KR 930009886A KR 940001458 A KR940001458 A KR 940001458A
Authority
KR
South Korea
Prior art keywords
field effect
effect transistor
gate
drain
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019930009886A
Other languages
English (en)
Korean (ko)
Inventor
코쿠료오 쥬
수나오 타카토리
마코토 야마모토
Original Assignee
수나오 타카토리
카부시키가이샤 요오잔
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 수나오 타카토리, 카부시키가이샤 요오잔 filed Critical 수나오 타카토리
Publication of KR940001458A publication Critical patent/KR940001458A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/611Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1019930009886A 1992-06-12 1993-06-02 전계효과 트랜지스터 Withdrawn KR940001458A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4179429A JPH0629520A (ja) 1992-06-12 1992-06-12 電界効果トランジスタ
JP92-179429 1992-06-12

Publications (1)

Publication Number Publication Date
KR940001458A true KR940001458A (ko) 1994-01-11

Family

ID=16065708

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930009886A Withdrawn KR940001458A (ko) 1992-06-12 1993-06-02 전계효과 트랜지스터

Country Status (4)

Country Link
EP (1) EP0577998B1 (https=)
JP (1) JPH0629520A (https=)
KR (1) KR940001458A (https=)
DE (1) DE69317480T2 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3355598A (en) * 1964-11-25 1967-11-28 Rca Corp Integrated logic arrays employing insulated-gate field-effect devices having a common source region and shared gates
JPS5753151A (en) * 1980-09-16 1982-03-30 Nippon Telegr & Teleph Corp <Ntt> And circuit
JPH0695570B2 (ja) * 1985-02-07 1994-11-24 三菱電機株式会社 半導体集積回路装置
US5005059A (en) * 1989-05-01 1991-04-02 Motorola, Inc. Digital-to-analog converting field effect device and circuitry

Also Published As

Publication number Publication date
EP0577998A3 (https=) 1994-02-16
DE69317480D1 (de) 1998-04-23
DE69317480T2 (de) 1998-07-09
JPH0629520A (ja) 1994-02-04
EP0577998A2 (en) 1994-01-12
EP0577998B1 (en) 1998-03-18

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19930602

PG1501 Laying open of application
N231 Notification of change of applicant
PN2301 Change of applicant

Patent event date: 19950413

Comment text: Notification of Change of Applicant

Patent event code: PN23011R01D

PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid