DE69317480T2 - Feldeffekttransistor - Google Patents

Feldeffekttransistor

Info

Publication number
DE69317480T2
DE69317480T2 DE69317480T DE69317480T DE69317480T2 DE 69317480 T2 DE69317480 T2 DE 69317480T2 DE 69317480 T DE69317480 T DE 69317480T DE 69317480 T DE69317480 T DE 69317480T DE 69317480 T2 DE69317480 T2 DE 69317480T2
Authority
DE
Germany
Prior art keywords
effect transistor
field effect
gate
common
drain region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69317480T
Other languages
German (de)
English (en)
Other versions
DE69317480D1 (de
Inventor
Guoliang Shou
Sunao Takatori
Makoto Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yozan Inc
Sharp Corp
Original Assignee
Yozan Inc
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yozan Inc, Sharp Corp filed Critical Yozan Inc
Publication of DE69317480D1 publication Critical patent/DE69317480D1/de
Application granted granted Critical
Publication of DE69317480T2 publication Critical patent/DE69317480T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69317480T 1992-06-12 1993-06-11 Feldeffekttransistor Expired - Fee Related DE69317480T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4179429A JPH0629520A (ja) 1992-06-12 1992-06-12 電界効果トランジスタ

Publications (2)

Publication Number Publication Date
DE69317480D1 DE69317480D1 (de) 1998-04-23
DE69317480T2 true DE69317480T2 (de) 1998-07-09

Family

ID=16065708

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69317480T Expired - Fee Related DE69317480T2 (de) 1992-06-12 1993-06-11 Feldeffekttransistor

Country Status (4)

Country Link
EP (1) EP0577998B1 (https=)
JP (1) JPH0629520A (https=)
KR (1) KR940001458A (https=)
DE (1) DE69317480T2 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3355598A (en) * 1964-11-25 1967-11-28 Rca Corp Integrated logic arrays employing insulated-gate field-effect devices having a common source region and shared gates
JPS5753151A (en) * 1980-09-16 1982-03-30 Nippon Telegr & Teleph Corp <Ntt> And circuit
JPH0695570B2 (ja) * 1985-02-07 1994-11-24 三菱電機株式会社 半導体集積回路装置
US5005059A (en) * 1989-05-01 1991-04-02 Motorola, Inc. Digital-to-analog converting field effect device and circuitry

Also Published As

Publication number Publication date
EP0577998A3 (https=) 1994-02-16
DE69317480D1 (de) 1998-04-23
JPH0629520A (ja) 1994-02-04
KR940001458A (ko) 1994-01-11
EP0577998A2 (en) 1994-01-12
EP0577998B1 (en) 1998-03-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee