KR930008193A - 실리콘 괴(塊)의 세정방법 - Google Patents

실리콘 괴(塊)의 세정방법 Download PDF

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Publication number
KR930008193A
KR930008193A KR1019920020055A KR920020055A KR930008193A KR 930008193 A KR930008193 A KR 930008193A KR 1019920020055 A KR1019920020055 A KR 1019920020055A KR 920020055 A KR920020055 A KR 920020055A KR 930008193 A KR930008193 A KR 930008193A
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South Korea
Prior art keywords
cleaning
silicon ingot
acid
silicon
pickling
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KR1019920020055A
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English (en)
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KR100230979B1 (ko
Inventor
히데오 이토오
미쯔토시 나루카와
카즈히로 사카이
Original Assignee
쿠로코 타게오
코오쥰도실리콘 가부시키가이샤
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Priority claimed from JP31148491A external-priority patent/JP2949207B2/ja
Application filed by 쿠로코 타게오, 코오쥰도실리콘 가부시키가이샤 filed Critical 쿠로코 타게오
Publication of KR930008193A publication Critical patent/KR930008193A/ko
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Publication of KR100230979B1 publication Critical patent/KR100230979B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Heat Treatment Of Water, Waste Water Or Sewage (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

본 발명은, 산세정액으로 실리콘괴를 세정하는 방법에 있어서, 질산과 불화수소산의 혼합산으로 이루어지는 세정액을 증류공정에 도입하고, 증류냉각부에 불화수소산을 도입하여 이산규소의 석출을 방지하는 것에 의해 세정폐액으로부터 질산을 증류회수해서 실리콘괴를 세정하는 방법을 개시한다.

Description

실리콘 괴(塊)의 세정방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명을 실시하는 증류장치의 한가지 예를 나타내는 개략단면도.

Claims (6)

  1. 질산과 불화수소산의 혼합산으로 이루어지는 세정액을 사용하여 실리콘괴를 산세정하는 방법에 있어서, 상기한 세정액에 의한 세정 후에 세정폐액을 증류공정으로 도입하고, 증류냉각부에 불화수소산을 도입하여 이산화규소의 석출을 방지하는 것에 의해 상기한 세정페액으로 부터 질산을 증류회수해서 실리콘괴를 세정하는 실리콘괴의 세정방법.
  2. 제1항에 있어서, 세정폐액으로부터 회수한 질산을 상기한 세정액에 첨가하여 재사용하는 실리콘괴의 세정방법.
  3. 제1항에 있어서, 상기한 증류냉각부에 소량의 불화수소산을 연속적으로 유입시키면서 세정폐액을 연속적으로 증류하는 실리콘괴의 세정방법.
  4. 제1항에 있어서, 상기한 산세정의 후에, 세정폐액을 증류공정으로 도입하는 한편, 세정한 실리콘괴를 고순도의 수증기중에 보전유지하면서 그 실리콘괴 표면에 생간 응결수에 의해 그 실리콘괴 표면에 잔류한 산을 세정 제거하는 실리콘괴의 세정방법.
  5. 질산과 불화수소산의 혼합산으로 이루어지는 세정액을 사용하여 실리콘괴를 산세정하는 방법에 있어서, 산세정의 후에, 세정한 실리콘괴를 고순도의 수증기중에 보전유지하여서 그 실리콘괴 표면에 생긴 응결수에 의해 그 실리콘괴 표면에 잔류한 산을 세정제거하는 실리콘괴의 세정방법.
  6. 제1항에 있어서, 상기한 산세정 후, 세정한 실리콘괴를 예비세정공정으로 도입해서, 그 예비세정공정에서 그 실리콘괴를 순수로 침지하고, 이어서 세정한 실리콘괴를 고순도의 수증기중에 보정유지하여서 그 실리콘괴 표면에 생긴 응결수에 의해 그 실리콘괴 표면에 잔류한 산을 세정제거하는 실리콘괴의 세정방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920020055A 1991-10-29 1992-10-29 실리콘괴(塊)의 세정방법 KR100230979B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP3308268A JPH05121390A (ja) 1991-10-29 1991-10-29 酸の除去方法
JP91-308268 1991-10-29
JP31148491A JP2949207B2 (ja) 1991-10-31 1991-10-31 シリコン処理廃液から硝酸を回収、再利用する方法
JP91-311484 1991-10-31

Publications (2)

Publication Number Publication Date
KR930008193A true KR930008193A (ko) 1993-05-21
KR100230979B1 KR100230979B1 (ko) 1999-11-15

Family

ID=26565475

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920020055A KR100230979B1 (ko) 1991-10-29 1992-10-29 실리콘괴(塊)의 세정방법

Country Status (5)

Country Link
US (1) US5346557A (ko)
EP (1) EP0548504B1 (ko)
JP (1) JPH05121390A (ko)
KR (1) KR100230979B1 (ko)
DE (1) DE69217024T2 (ko)

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CN102134077B (zh) * 2011-01-25 2012-09-05 云南乾元光能产业有限公司 一种湿法提纯多晶硅的方法
CN103215593A (zh) * 2012-01-19 2013-07-24 库特勒自动化系统(苏州)有限公司 用于处理酸性蚀刻废物体系的回收系统及回收方法
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Also Published As

Publication number Publication date
JPH05121390A (ja) 1993-05-18
DE69217024D1 (de) 1997-03-06
KR100230979B1 (ko) 1999-11-15
DE69217024T2 (de) 1997-08-21
EP0548504A3 (en) 1993-12-01
EP0548504A2 (en) 1993-06-30
US5346557A (en) 1994-09-13
EP0548504B1 (en) 1997-01-22

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