KR930005126A - 레지스트 패턴(resist pattern)의 형성방법 및 해당방법에 사용되는 반사 방지막 형성용 유기시란(silane)화합물 - Google Patents

레지스트 패턴(resist pattern)의 형성방법 및 해당방법에 사용되는 반사 방지막 형성용 유기시란(silane)화합물 Download PDF

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KR930005126A
KR930005126A KR1019920014184A KR920014184A KR930005126A KR 930005126 A KR930005126 A KR 930005126A KR 1019920014184 A KR1019920014184 A KR 1019920014184A KR 920014184 A KR920014184 A KR 920014184A KR 930005126 A KR930005126 A KR 930005126A
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South Korea
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electric
substrate
forming
antireflection film
ultraviolet light
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KR1019920014184A
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KR970005593B1 (en
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데쯔로 하나와
오프 데 벡트 마리아
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시기 모리야
미쓰비시 뎅끼 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/12—Production of screen printing forms or similar printing forms, e.g. stencils
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C07F7/1804—Compounds having Si-O-C linkages
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146—Laser beam

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

내용 없음.

Description

레지스트 패턴(resist pattern)의 형성방법 및 해당방법에 사용되는 반사 방지막 형성용 유기시란(silane)화합물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시예에 따른 레지스트 패턴(resist pattern)의 형성방법의 순서의 각 공정에 있어서 반도체 장치의 부분단면도이다.
제2도는 본 발명에 사용되는 유기 시란(silane)화합물의 화학구조식 및 그 제조를 위한 반응식을 표시한 도면이다.
제3도는 본 발명에 사용되는 유기 시란 화합물과 기판표면의 수산기와의 반응을 표시하는 도면이다.
제4도는 본 발명의 효과인 막내 다중반효과의 감소를 표시하는 도면이다.
제5도는 본 발명에 사용되는 유기 시란 화합물의 다른예의 화학 구조식이다.

Claims (3)

  1. 원자외광을 사용하는 리도그래피(dithography)에 의해, 기판의 위에 레지스터(resist) 패턴(pater)을 형성하는 방법으로서, 기판의 표면에 반사방지막을 형성하기 위한 유기시란(Silane)화합물과를 공유결합으로 맺기 위해서 전기기판의 표면에 존재하는 수산기와 치환되는 탈리기와, 전기 실리콘(silicon)원자에 결합되어, 전기 원자외광을 흡수하는 치환기와를 포함한 유기 시란(silane)화합물을 준비하는 공정과, 전기기판의 위에 전기유기시란 화합물을 도포하는 공정과, 전기유기시란 화합물이 도포된 전기기판의 위에 레지스트를 도포하는 공정과, 전기 레지스트를 전기원자외광을 사용해서 선택적으로 노출을 하는 공정과, 전기 레지스트틀 현성하는 공정과를 설비하는, 레지스트 패턴의 형성방법.
  2. 원자외광을 사용하는 리도그래피(dithography)에 의해, 기판의 위에 레지스터 패턴을 형성하기 위해, 전기기판의 위에 레지스트를 도포하기 앞서, 도포되는, 반사방지막 형성용의 유기 시란(silane)화합물이며, 실리콘원자와, 전기 실리콘원자에 결합되어, 전기기판과 해당 유기시란 화합물과 공유결합으로 맺기 위해 전기기판을 표면에 존재하는 수산기와 치환되는 탈리기와, 전기 실리콘(silicon)원자에 결합되어, 전기 원자외광을 흡수한 치환기와를 설비한 반사방지막 형성용 유기시란(silane)화합물.
  3. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR92014184A 1991-08-08 1992-08-07 Method of forming resist pattern and organic silane compound for forming anti-reflection film for use in such method KR970005593B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-199603 1991-08-08
JP3199603A JPH0547656A (ja) 1991-08-08 1991-08-08 レジストパターンの形成方法および該方法に用いられる反射防止膜形成用有機シラン化合物

Publications (2)

Publication Number Publication Date
KR930005126A true KR930005126A (ko) 1993-03-23
KR970005593B1 KR970005593B1 (en) 1997-04-18

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Application Number Title Priority Date Filing Date
KR92014184A KR970005593B1 (en) 1991-08-08 1992-08-07 Method of forming resist pattern and organic silane compound for forming anti-reflection film for use in such method

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US (2) US5380889A (ko)
JP (1) JPH0547656A (ko)
KR (1) KR970005593B1 (ko)
DE (1) DE4203557C2 (ko)

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US6051369A (en) * 1998-01-08 2000-04-18 Kabushiki Kaisha Toshiba Lithography process using one or more anti-reflective coating films and fabrication process using the lithography process
US6890448B2 (en) * 1999-06-11 2005-05-10 Shipley Company, L.L.C. Antireflective hard mask compositions
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EP1762895B1 (en) * 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
JP4448183B2 (ja) * 2007-09-28 2010-04-07 日東電工株式会社 偏光板、その製造方法、光学フィルムおよび画像表示装置
US9428605B2 (en) * 2012-11-08 2016-08-30 Neo Sitech Llc Organic-inorganic hybrid material compositions and polymer composites
WO2015131032A1 (en) * 2014-02-28 2015-09-03 Momentive Performance Materials Inc. Tie coat composition and antifouling system

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Publication number Publication date
KR970005593B1 (en) 1997-04-18
US5380889A (en) 1995-01-10
DE4203557C2 (de) 1995-06-14
US5512422A (en) 1996-04-30
DE4203557A1 (de) 1993-02-11
JPH0547656A (ja) 1993-02-26

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