KR970005593B1 - Method of forming resist pattern and organic silane compound for forming anti-reflection film for use in such method - Google Patents

Method of forming resist pattern and organic silane compound for forming anti-reflection film for use in such method Download PDF

Info

Publication number
KR970005593B1
KR970005593B1 KR92014184A KR920014184A KR970005593B1 KR 970005593 B1 KR970005593 B1 KR 970005593B1 KR 92014184 A KR92014184 A KR 92014184A KR 920014184 A KR920014184 A KR 920014184A KR 970005593 B1 KR970005593 B1 KR 970005593B1
Authority
KR
South Korea
Prior art keywords
forming
resist pattern
reflection film
silane compound
organic silane
Prior art date
Application number
KR92014184A
Other languages
English (en)
Other versions
KR930005126A (ko
Inventor
Tetsuro Hanawa
Maria O Debeeck
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of KR930005126A publication Critical patent/KR930005126A/ko
Application granted granted Critical
Publication of KR970005593B1 publication Critical patent/KR970005593B1/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/12—Production of screen printing forms or similar printing forms, e.g. stencils
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C07F7/1804—Compounds having Si-O-C linkages
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146—Laser beam
KR92014184A 1991-08-08 1992-08-07 Method of forming resist pattern and organic silane compound for forming anti-reflection film for use in such method KR970005593B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-199603 1991-08-08
JP3199603A JPH0547656A (ja) 1991-08-08 1991-08-08 レジストパターンの形成方法および該方法に用いられる反射防止膜形成用有機シラン化合物

Publications (2)

Publication Number Publication Date
KR930005126A KR930005126A (ko) 1993-03-23
KR970005593B1 true KR970005593B1 (en) 1997-04-18

Family

ID=16410607

Family Applications (1)

Application Number Title Priority Date Filing Date
KR92014184A KR970005593B1 (en) 1991-08-08 1992-08-07 Method of forming resist pattern and organic silane compound for forming anti-reflection film for use in such method

Country Status (4)

Country Link
US (2) US5380889A (ko)
JP (1) JPH0547656A (ko)
KR (1) KR970005593B1 (ko)
DE (1) DE4203557C2 (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5498748A (en) * 1993-07-20 1996-03-12 Wako Pure Chemical Industries, Ltd. Anthracene derivatives
US5576359A (en) * 1993-07-20 1996-11-19 Wako Pure Chemical Industries, Ltd. Deep ultraviolet absorbent composition
US6258972B1 (en) 1995-08-03 2001-07-10 Matsushita Electric Industrial Co., Ltd. Pattern formation method and surface treating agent
US6054255A (en) * 1996-08-01 2000-04-25 Matsushita Electric Industrial Co., Ltd. Pattern formation method and surface treating agent
US5879863A (en) * 1997-01-22 1999-03-09 Kabushiki Kaisha Toshiba Pattern forming method
JP3202649B2 (ja) * 1997-04-17 2001-08-27 日本電気株式会社 反射防止膜形成用材料およびこれを用いた半導体装置の製造方法
US6051369A (en) * 1998-01-08 2000-04-18 Kabushiki Kaisha Toshiba Lithography process using one or more anti-reflective coating films and fabrication process using the lithography process
US6890448B2 (en) * 1999-06-11 2005-05-10 Shipley Company, L.L.C. Antireflective hard mask compositions
US7501230B2 (en) * 2002-11-04 2009-03-10 Meagley Robert P Photoactive adhesion promoter
EP1609024B1 (en) * 2003-03-11 2015-09-30 Fujifilm Electronic Materials USA, Inc. Photosensitive resin compositions
EP1762895B1 (en) * 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
JP4448183B2 (ja) * 2007-09-28 2010-04-07 日東電工株式会社 偏光板、その製造方法、光学フィルムおよび画像表示装置
US9428605B2 (en) * 2012-11-08 2016-08-30 Neo Sitech Llc Organic-inorganic hybrid material compositions and polymer composites
WO2015131032A1 (en) * 2014-02-28 2015-09-03 Momentive Performance Materials Inc. Tie coat composition and antifouling system

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3036710A1 (de) * 1980-09-29 1982-05-13 Siemens AG, 1000 Berlin und 8000 München Verfahren zur erzeugung von photolackstrukuren
US4362809A (en) * 1981-03-30 1982-12-07 Hewlett-Packard Company Multilayer photoresist process utilizing an absorbant dye
US4587203A (en) * 1983-05-05 1986-05-06 Hughes Aircraft Company Wet process for developing styrene polymer resists for submicron lithography
JPS61221190A (ja) * 1985-03-26 1986-10-01 Toshiba Silicone Co Ltd チツ素含有有機ケイ素化合物
DE3627757A1 (de) * 1986-08-16 1988-02-18 Basf Ag Verfahren zur herstellung von flachdruckplatten
JPS63250390A (ja) * 1987-04-06 1988-10-18 Shin Etsu Chem Co Ltd 有機珪素化合物
DE3811241A1 (de) * 1988-04-02 1989-10-12 Hoechst Ag Silylierungsreagenzien zur herstellung von in waessrigem alkali loeslichen, silanylgruppen in der seitenkette enthaltenden, bindemittel
DE3842896C2 (de) * 1988-04-22 1998-07-02 Tokyo Ohka Kogyo Co Ltd Positiv arbeitende lichtempfindliche Zusammensetzung
JP2661671B2 (ja) * 1989-03-20 1997-10-08 株式会社日立製作所 パタン形成材料とそれを用いたパタン形成方法
FR2654731B1 (fr) * 1989-11-21 1992-03-13 Rhone Poulenc Chimie Silane et organopolysiloxane a reste cyclopentenyle pouvant etre obtenu par reaction de michael.

Also Published As

Publication number Publication date
US5380889A (en) 1995-01-10
DE4203557C2 (de) 1995-06-14
US5512422A (en) 1996-04-30
DE4203557A1 (de) 1993-02-11
KR930005126A (ko) 1993-03-23
JPH0547656A (ja) 1993-02-26

Similar Documents

Publication Publication Date Title
EP0453169A3 (en) Method of forming a mask and a thin-film transistor
GB2265021B (en) Photosensitive materials and their use in forming protective layers for printed circuit and process for preparation of printed circuit
KR970005593B1 (en) Method of forming resist pattern and organic silane compound for forming anti-reflection film for use in such method
EP0540451A3 (en) Structure and process for thin film interconnect
EP0465931A3 (en) Multi-layer films and process for preparation thereof
EP0497189A3 (en) Water- and oil-repelling absorbed film and method of manufacturing the same
KR970008069B1 (en) Chemically absorbed film and method of manufacturing the same
KR0131192B1 (en) Exposed mask, fabrication method of exposed mask substrate and patterning method based on exposed mask
EP0483669A3 (en) A method for forming a thin film and semiconductor devices
EP0478308A3 (en) Method of forming interlayer-insulating film
EP0512562A3 (en) Method of forming coating films
EP0483783A3 (en) Fabrication method and structure of a thin film electroluminescent device
EP0449180A3 (en) Film exposure apparatus and method of exposure using the same
GB9322945D0 (en) Method for producing field effect transistor and pattern transfer mask
EP0494689A3 (en) Thin film deposition method and apparatus
KR950000201B1 (en) Pattern-forming method and radiation resist for use when working this pattern-froming method
EP0523639A3 (en) Method for patterning metallo-organic precursor film and film products
GB9319758D0 (en) Method of removing coating films
EP0460941A3 (en) Resist composition and process for forming resist pattern thereby
KR970009859B1 (en) Etching method of polycide film
ZA925325B (en) Paint detackifying and flocculating composition and process
GB2285141B (en) Method of removing photo resist
GB2266536B (en) Method for forming boron-doped semiconducting diamond films
EP0552382A4 (en) Double-layer resist and method of and device for making said resist
EP0558102A3 (en) Resist composition and process for producing the same

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E902 Notification of reason for refusal
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
J202 Request for trial for correction [limitation]
J301 Trial decision

Free format text: TRIAL DECISION FOR CORRECTION REQUESTED 19980520

Effective date: 19990406

FPAY Annual fee payment

Payment date: 20000411

Year of fee payment: 4

LAPS Lapse due to unpaid annual fee