KR930004238B1 - 세로형 기상(氣相)성장장치 및 방법 - Google Patents

세로형 기상(氣相)성장장치 및 방법 Download PDF

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Publication number
KR930004238B1
KR930004238B1 KR1019880013517A KR880013517A KR930004238B1 KR 930004238 B1 KR930004238 B1 KR 930004238B1 KR 1019880013517 A KR1019880013517 A KR 1019880013517A KR 880013517 A KR880013517 A KR 880013517A KR 930004238 B1 KR930004238 B1 KR 930004238B1
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KR
South Korea
Prior art keywords
susceptor
vapor phase
phase growth
growth apparatus
sic film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019880013517A
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English (en)
Korean (ko)
Other versions
KR890008939A (ko
Inventor
타카시 오오토
마사노리 니시무라
에이치 토야
Original Assignee
도오시바 쎄라믹스 가부시끼가이샤
카스야 키요히꼬
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 도오시바 쎄라믹스 가부시끼가이샤, 카스야 키요히꼬 filed Critical 도오시바 쎄라믹스 가부시끼가이샤
Publication of KR890008939A publication Critical patent/KR890008939A/ko
Application granted granted Critical
Publication of KR930004238B1 publication Critical patent/KR930004238B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
KR1019880013517A 1987-11-11 1988-10-17 세로형 기상(氣相)성장장치 및 방법 Expired - Fee Related KR930004238B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP283054 1987-11-11
JP62283054A JP2566796B2 (ja) 1987-11-11 1987-11-11 気相成長装置
JP87-283054 1987-11-11

Publications (2)

Publication Number Publication Date
KR890008939A KR890008939A (ko) 1989-07-13
KR930004238B1 true KR930004238B1 (ko) 1993-05-22

Family

ID=17660604

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880013517A Expired - Fee Related KR930004238B1 (ko) 1987-11-11 1988-10-17 세로형 기상(氣相)성장장치 및 방법

Country Status (5)

Country Link
JP (1) JP2566796B2 (enrdf_load_stackoverflow)
KR (1) KR930004238B1 (enrdf_load_stackoverflow)
DE (1) DE3837584A1 (enrdf_load_stackoverflow)
FR (1) FR2622899B1 (enrdf_load_stackoverflow)
IT (1) IT1227859B (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2701767B2 (ja) * 1995-01-27 1998-01-21 日本電気株式会社 気相成長装置
DE19631168C1 (de) * 1996-08-01 1998-01-08 Siemens Ag Verfahren zur Vorbehandlung von Substratträgern für Gasphasenepitaxie
DE19803423C2 (de) * 1998-01-29 2001-02-08 Siemens Ag Substrathalterung für SiC-Epitaxie und Verfahren zum Herstellen eines Einsatzes für einen Suszeptor
US6770144B2 (en) * 2000-07-25 2004-08-03 International Business Machines Corporation Multideposition SACVD reactor
JP4183945B2 (ja) * 2001-07-30 2008-11-19 コバレントマテリアル株式会社 ウェーハ熱処理用部材
KR102051668B1 (ko) * 2016-12-20 2019-12-04 주식회사 티씨케이 SiC 증착층을 포함하는 반도체 제조용 부품 및 그 제조방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3424628A (en) * 1966-01-24 1969-01-28 Western Electric Co Methods and apparatus for treating semi-conductive materials with gases
US3399651A (en) * 1967-05-26 1968-09-03 Philco Ford Corp Susceptor for growing polycrystalline silicon on wafers of monocrystalline silicon
JPS58125608A (ja) * 1982-01-22 1983-07-26 Nec Corp グラフアイト板の表面に均一なＳｉＣ膜を形成する方法とその装置
JP2671914B2 (ja) * 1986-01-30 1997-11-05 東芝セラミックス 株式会社 サセプタ

Also Published As

Publication number Publication date
KR890008939A (ko) 1989-07-13
JPH01125819A (ja) 1989-05-18
IT1227859B (it) 1991-05-10
DE3837584A1 (de) 1989-05-24
DE3837584C2 (enrdf_load_stackoverflow) 1993-01-28
FR2622899A1 (fr) 1989-05-12
JP2566796B2 (ja) 1996-12-25
IT8822503A0 (it) 1988-11-04
FR2622899B1 (fr) 1992-01-03

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