IT8822503A0 - Apparecchiatura verticale di accrescimento in fase vapore e relativo procedimento - Google Patents

Apparecchiatura verticale di accrescimento in fase vapore e relativo procedimento

Info

Publication number
IT8822503A0
IT8822503A0 IT8822503A IT2250388A IT8822503A0 IT 8822503 A0 IT8822503 A0 IT 8822503A0 IT 8822503 A IT8822503 A IT 8822503A IT 2250388 A IT2250388 A IT 2250388A IT 8822503 A0 IT8822503 A0 IT 8822503A0
Authority
IT
Italy
Prior art keywords
accrection
equipment
vapor phase
related procedure
vertical vapor
Prior art date
Application number
IT8822503A
Other languages
English (en)
Other versions
IT1227859B (it
Inventor
Takashi Ohto
Masanori Nishimura
Eiichi Toya
Original Assignee
Toshiba Ceramics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co filed Critical Toshiba Ceramics Co
Publication of IT8822503A0 publication Critical patent/IT8822503A0/it
Application granted granted Critical
Publication of IT1227859B publication Critical patent/IT1227859B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/08—Preparation of the foundation plate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
IT8822503A 1987-11-11 1988-11-04 Apparecchiatura verticale di accrescimento in fase vapore e relativo procedimento IT1227859B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62283054A JP2566796B2 (ja) 1987-11-11 1987-11-11 気相成長装置

Publications (2)

Publication Number Publication Date
IT8822503A0 true IT8822503A0 (it) 1988-11-04
IT1227859B IT1227859B (it) 1991-05-10

Family

ID=17660604

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8822503A IT1227859B (it) 1987-11-11 1988-11-04 Apparecchiatura verticale di accrescimento in fase vapore e relativo procedimento

Country Status (5)

Country Link
JP (1) JP2566796B2 (it)
KR (1) KR930004238B1 (it)
DE (1) DE3837584A1 (it)
FR (1) FR2622899B1 (it)
IT (1) IT1227859B (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2701767B2 (ja) * 1995-01-27 1998-01-21 日本電気株式会社 気相成長装置
DE19631168C1 (de) * 1996-08-01 1998-01-08 Siemens Ag Verfahren zur Vorbehandlung von Substratträgern für Gasphasenepitaxie
DE19803423C2 (de) 1998-01-29 2001-02-08 Siemens Ag Substrathalterung für SiC-Epitaxie und Verfahren zum Herstellen eines Einsatzes für einen Suszeptor
US6770144B2 (en) * 2000-07-25 2004-08-03 International Business Machines Corporation Multideposition SACVD reactor
JP4183945B2 (ja) * 2001-07-30 2008-11-19 コバレントマテリアル株式会社 ウェーハ熱処理用部材
KR102051668B1 (ko) * 2016-12-20 2019-12-04 주식회사 티씨케이 SiC 증착층을 포함하는 반도체 제조용 부품 및 그 제조방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3424628A (en) * 1966-01-24 1969-01-28 Western Electric Co Methods and apparatus for treating semi-conductive materials with gases
US3399651A (en) * 1967-05-26 1968-09-03 Philco Ford Corp Susceptor for growing polycrystalline silicon on wafers of monocrystalline silicon
JPS58125608A (ja) * 1982-01-22 1983-07-26 Nec Corp グラフアイト板の表面に均一なＳｉＣ膜を形成する方法とその装置
JP2671914B2 (ja) * 1986-01-30 1997-11-05 東芝セラミックス 株式会社 サセプタ

Also Published As

Publication number Publication date
DE3837584A1 (de) 1989-05-24
JP2566796B2 (ja) 1996-12-25
FR2622899A1 (fr) 1989-05-12
JPH01125819A (ja) 1989-05-18
KR890008939A (ko) 1989-07-13
DE3837584C2 (it) 1993-01-28
IT1227859B (it) 1991-05-10
KR930004238B1 (ko) 1993-05-22
FR2622899B1 (fr) 1992-01-03

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971129