KR920702442A - 전자분야에 사용하기 위한 유기원소화합물 - Google Patents
전자분야에 사용하기 위한 유기원소화합물Info
- Publication number
- KR920702442A KR920702442A KR1019920700154A KR920700154A KR920702442A KR 920702442 A KR920702442 A KR 920702442A KR 1019920700154 A KR1019920700154 A KR 1019920700154A KR 920700154 A KR920700154 A KR 920700154A KR 920702442 A KR920702442 A KR 920702442A
- Authority
- KR
- South Korea
- Prior art keywords
- compound
- formula
- organic
- organic element
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 150000001875 compounds Chemical class 0.000 title claims 16
- 238000004519 manufacturing process Methods 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 3
- 238000005137 deposition process Methods 0.000 claims 3
- 238000009833 condensation Methods 0.000 claims 2
- 230000005494 condensation Effects 0.000 claims 2
- 238000004821 distillation Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 239000003153 chemical reaction reagent Substances 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 230000005693 optoelectronics Effects 0.000 claims 1
- 150000002902 organometallic compounds Chemical class 0.000 claims 1
- 239000011148 porous material Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
- 239000007858 starting material Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/90—Antimony compounds
- C07F9/902—Compounds without antimony-carbon linkages
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/02—Phosphorus compounds
- C07F9/06—Phosphorus compounds without P—C bonds
- C07F9/22—Amides of acids of phosphorus
- C07F9/224—Phosphorus triamides
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/66—Arsenic compounds
- C07F9/68—Arsenic compounds without As—C bonds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEP40179664 | 1990-06-05 | ||
| DE4017966A DE4017966C2 (de) | 1990-06-05 | 1990-06-05 | Verwendung elementorganischer Verbindungen zur Abscheidung aus der Gasphase |
| PCT/DE1991/000471 WO1991019028A1 (de) | 1990-06-05 | 1991-06-05 | Elementorganische verbindungen zur verwendung im elektronischen bereich |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR920702442A true KR920702442A (ko) | 1992-09-04 |
Family
ID=6407803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019920700154A Withdrawn KR920702442A (ko) | 1990-06-05 | 1991-06-05 | 전자분야에 사용하기 위한 유기원소화합물 |
Country Status (8)
| Country | Link |
|---|---|
| EP (1) | EP0460598B1 (enExample) |
| JP (1) | JPH05500372A (enExample) |
| KR (1) | KR920702442A (enExample) |
| DE (1) | DE4017966C2 (enExample) |
| ES (1) | ES2068429T3 (enExample) |
| GR (1) | GR3015256T3 (enExample) |
| TW (1) | TW260804B (enExample) |
| WO (1) | WO1991019028A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4214224A1 (de) * | 1992-04-30 | 1993-11-04 | Merck Patent Gmbh | Verwendung von elementorganischen verbindungen zur abscheidung des elementes auf substraten |
| MY112170A (en) * | 1994-09-02 | 2001-04-30 | Sec Dep For Defence Acting Through His Defence Evaluation And Research Agency United Kingdom | Metalorganic compounds |
| JP6202798B2 (ja) | 2011-10-12 | 2017-09-27 | エーエスエム インターナショナル エヌ．ヴェー．Ａｓｍ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｎ．Ｖ． | 酸化アンチモン膜の原子層堆積 |
| JP6210828B2 (ja) * | 2013-10-04 | 2017-10-11 | 株式会社Adeka | 薄膜形成用原料、薄膜の製造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1438745A (fr) * | 1964-07-10 | 1966-05-13 | Rohm & Haas | Procédé de fabrication de dimères et trimères d'acrylates |
| DE1287571B (de) * | 1966-02-21 | 1969-01-23 | Frhr Von Hirsch Hubert | Verfahren zur Herstellung von Enaminen |
| DE3172368D1 (en) * | 1980-11-18 | 1985-10-24 | British Telecomm | Improvements in the manufacture of group iiib-vb compounds |
| GB2162862B (en) * | 1984-07-26 | 1988-10-19 | Japan Res Dev Corp | A method of growing a thin film single crystalline semiconductor |
| EP0204724B1 (en) * | 1984-11-20 | 1990-01-24 | Hughes Aircraft Company | Method for deposition of gallium arsenide from vapor phase gallium-arsenic complexes |
| CA1322935C (en) * | 1987-06-22 | 1993-10-12 | Donald Valentine Jr. | Branched monoalkyl group v a compounds as mocvd element sources |
| DE3868875D1 (de) * | 1987-11-30 | 1992-04-09 | Daido Oxygen | Apparat zur produktion von halbleitern. |
| DE3812180A1 (de) * | 1988-04-13 | 1989-10-26 | Preussag Pure Metals Gmbh | Metallorganische verbindungen zur verwendung im elektronischen bereich |
| DE3841643C2 (de) * | 1988-12-10 | 1999-07-01 | Merck Patent Gmbh | Metallorganische Verbindungen und deren Verwendung |
| DE3842161A1 (de) * | 1988-12-15 | 1990-06-28 | Preussag Pure Metals Gmbh | Hochreine alkyl- und arylphosphine fuer gasphasenepitaxie-prozesse |
-
1990
- 1990-06-05 DE DE4017966A patent/DE4017966C2/de not_active Expired - Fee Related
-
1991
- 1991-06-04 EP EP91109099A patent/EP0460598B1/de not_active Expired - Lifetime
- 1991-06-04 ES ES91109099T patent/ES2068429T3/es not_active Expired - Lifetime
- 1991-06-05 WO PCT/DE1991/000471 patent/WO1991019028A1/de not_active Ceased
- 1991-06-05 KR KR1019920700154A patent/KR920702442A/ko not_active Withdrawn
- 1991-06-05 JP JP3509506A patent/JPH05500372A/ja active Pending
- 1991-06-25 TW TW080104400A patent/TW260804B/zh active
-
1995
- 1995-03-02 GR GR950400294T patent/GR3015256T3/el unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW260804B (enExample) | 1995-10-21 |
| WO1991019028A1 (de) | 1991-12-12 |
| DE4017966A1 (de) | 1991-12-12 |
| EP0460598A1 (de) | 1991-12-11 |
| EP0460598B1 (de) | 1995-03-01 |
| GR3015256T3 (en) | 1995-06-30 |
| DE4017966C2 (de) | 1996-05-30 |
| JPH05500372A (ja) | 1993-01-28 |
| ES2068429T3 (es) | 1995-04-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19920122 |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |