KR920022375A - 알루미늄 나이트라이드의 다층 회로보드 제조공정 - Google Patents

알루미늄 나이트라이드의 다층 회로보드 제조공정 Download PDF

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KR920022375A
KR920022375A KR1019920008465A KR920008465A KR920022375A KR 920022375 A KR920022375 A KR 920022375A KR 1019920008465 A KR1019920008465 A KR 1019920008465A KR 920008465 A KR920008465 A KR 920008465A KR 920022375 A KR920022375 A KR 920022375A
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South Korea
Prior art keywords
aluminum nitride
firing
circuit board
multilayer circuit
conductor
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KR1019920008465A
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KR960010738B1 (ko
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히로시 마끼하라
고지 오모떼
노부오 가메하라
미네하루 쓰까다
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세끼사와 요시
후지쓰 가부시끼가이샤
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Publication of KR960010738B1 publication Critical patent/KR960010738B1/ko

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • C04B41/5133—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal with a composition mainly composed of one or more of the refractory metals
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/88—Metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/4807—Ceramic parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4867—Applying pastes or inks, e.g. screen printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49883—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing organic materials or pastes, e.g. for thick films
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Ceramic Products (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)

Abstract

내용 없음.

Description

알루미늄 나이트라이드의 다층 회로보드 제조공정
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 소성 온도가 소성된 AIN회로보드의 소결된 밀도 사이의 관계를 나타내는 그래프,
제2도는 소성 온도와 소성된 AIN회로보드의 열도전성 사이의 관계를 나타내는 그래프,
제3도는 180℃의 소성온도에서 소성시간의 기능으로서 소결된 밀도와 소성된 AIN회로보드의 열도전성을 나타내는 그래프,
제4도는 W의 제작 회로도전체의 체적 저항 성분과 소성을 위해 사용된 압축원 니트로겐 가스 분위기의 입력 사이의 관계를 나타내는 그래프,
제5도는 첨가된 AIN 파우더의 양과 W도전체의 수축 팩터 사이의 관계를 나타내는 그래프,
제6도는 첨가된 AIN파우더의 양과 W도전체의 체적 저항 성분 사이와 관계를 나타내는 그래프.

Claims (6)

  1. 알루미늄 나이트라이드의 그린 시트를 마련하는 스텝, 도전체의 주성분으로서 텅스텐을 포함한 도전체 페이스트의 도전체 패턴을 상기 그린 시트상에 형성하는 스텝, 박층을 형성하기 위하여 상기 그린 시트를 그 위에 형성된 상기 도전체 패턴과 함께 박층화 하는 스텝, 보론 나이트라이드로 만들어진 콘테이너 내에서 상기 박층을 가압된 니트로겐 가스 분위기에서 소성하는 스텝을 구비함을 특징으로 하는 알루미늄 나이트라이드의 다층회로보드 제조공정.
  2. 제1항에 있어서, 상기 소성은 3atm이상의 압력으로 가압된 니트로겐 가스 분위기에서 수행되는 것을 특징으로 하는 알루미늄 나이트라이드의 다층회로보드 제조공정.
  3. 제1항 또는 제2항에 있어서, 상기 도전체 페이스트는 10wt%이하의 양으로 알루미늄 나이트라이드의 파우더를 포함하는 것을 특징으로 하는 알루미늄 나이트라이드의 다층회로보드 제조공정.
  4. 제3항에 있어서, 상기 도전체 페이스트는 3wt%이상의 양으로 알루미늄 나이트라이드의 파우더를 포함하는 것을 특징으로 하는 알루미늄 나이트라이드의 다층회로보드 제조공정.
  5. 제1항부터 제4항까지에 있어서, 상기 소성은 1600℃이상의 온도에서 수행되는 것을 특징으로 하는 알루미늄 나이트라이드의 다층회로보드 제조공정.
  6. 제5항에 있어서, 상기 보론 나이트라이드의 콘테이너내에서 1600℃이상의 온도에서 소성후에, 상기 박층은 상기 보론 나이트라이드의 상기 콘테이너가 사용되지 않고 카본을 포함하지 않은 비산화성 분위기에서 1600℃이하의 온도로 추가로 소성되는 것을 특징으로 하는 알루미늄 나이트라이드의 다층회로보드 제조공정.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920008465A 1991-05-21 1992-05-19 질화알루미늄의 다층 회로기판 제조방법 KR960010738B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-116110 1991-05-21
JP3116110A JP2555231B2 (ja) 1991-05-21 1991-05-21 窒化アルミニウム多層回路基板の製造方法

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KR920022375A true KR920022375A (ko) 1992-12-19
KR960010738B1 KR960010738B1 (ko) 1996-08-07

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US (1) US5683529A (ko)
EP (1) EP0515061B1 (ko)
JP (1) JP2555231B2 (ko)
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DE (1) DE69227943T2 (ko)

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DE69227943T2 (de) 1999-05-12
US5683529A (en) 1997-11-04
JPH05254966A (ja) 1993-10-05
EP0515061B1 (en) 1998-12-23
KR960010738B1 (ko) 1996-08-07
DE69227943D1 (de) 1999-02-04
EP0515061A1 (en) 1992-11-25
JP2555231B2 (ja) 1996-11-20

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