KR970019804A - 고강도 고신뢰성 회로기판 및 그 제조방법 - Google Patents

고강도 고신뢰성 회로기판 및 그 제조방법 Download PDF

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KR970019804A
KR970019804A KR1019960042431A KR19960042431A KR970019804A KR 970019804 A KR970019804 A KR 970019804A KR 1019960042431 A KR1019960042431 A KR 1019960042431A KR 19960042431 A KR19960042431 A KR 19960042431A KR 970019804 A KR970019804 A KR 970019804A
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circuit board
group
rare earth
alkaline earth
earth element
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KR100261793B1 (ko
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아키히로 호리구치
히로야스 스미노
미츠오 가소리
후미오 우에노
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니시무로 타이조
가부시키가이샤 도시바
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Abstract

본 발명에 따른 회로기판은, 적어도 하나의 절연층과 적어도 하나의 도체층을 갖춘 회로기판에 있어서, 전체 절연체중 적어도 하나가 주성분으로서 β-Si3N4를 포함하는 소결체임과 더불어 적어도 하나의 원소가 회토류원소와 알카리토류원소로 이루어진 군으로부터 선택되고, 전체 도체층중 적어도 하나가, (a) 주기율표의 IVb, Vb, VIb족으로 이루어진 군으로부터 선택된 적어도 하나의 원소를 포함함과 더불어 적어도 하나의 원소가 회토류원소와 알카리토류원소로 이루어진 군으로부터 선택되고, (b) 주성분으로서 Mo와 W중 적어도 하나를 포함함과 더불어 적어도 하나의 원소가 주기율표의 VIII족으로 이루어진 군으로부터 선택되며, (c) 주성분으로서 Mo와 W중 적어도 하나를 포함함과 더불어 AIN을 더 포함한다.

Description

고강도 고신뢰성 회로기판 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 다층 세라믹 회로기판을 나타낸 부분 절단 투시도.

Claims (19)

  1. 적어도 하나의 절연층과 적어도 하나의 도체층을 갖춘 회로기판에 있어서, 전체 절연체중 적어도 하나가 주성분으로서 β-SiN4를 포함하는 소결체임과 더불어 적어도 하나의 원소가 회토류원소와 알카리토류원소로 이루어진 군으로부터 선택되고, 전체 도체층중 적어도 하나가 주기율표의 IVb, Vb, VIb족으로 이루어진 군으로부터 선택된 적어도 하나의 원소를 포함함과 더불어 적어도 하나의 원소가 희토류원소와 알카리토류원소로 이루어진 군으로부터 선택되는 것을 특징으로 하는 회로기판.
  2. 제1항에 있어서, 절연층이 30W/mK이상의 열전도성을 갖는 것을 특징으로 하는 회로기판.
  3. 제1항에 있어서, 회토류원소와 알카리토류원소가 Sc, Y, La, Ce, Pr, Nd, Sm, EU, Gb, Tb, Dy, Ho, Er, Tm, Yb, Lu, Be, Mg, Ca, Sr, Ba인 것을 특징으로 하는 회로기판.
  4. 제1항에 있어서, 주기율표의 IVb, Vb, VIb 족이 Mo, W, Ti, Zr, Nb, Ta인 것을 특징으로 하는 회로기판.
  5. 제1항에 있어서, 절연층이 Al원소를 더 포함하는 것을 특징으로 하는 회로기판.
  6. 제1항에 있어서, 도체층이 Al원소와 Si원소중 적어도 하나를 더 포함하는 것을 특징으로 하는 회로기판.
  7. 제1항에 있어서, 도체층과 절연층이 회토산원소와 알카리토류원소로 이루어진 군으로부터 선택된 공통 원소를 포함하는 것을 특징으로 하는 회로기판.
  8. 제1항에 있어서, 절연체층에 포함된 회토류원소와 알카리토류원소로 이루어진 군으로부터 선택된 적어도 하나의 원소가 산화물 환산으로 0.01 내지 15중량%의 양에 포함되는 것을 특징으로 하는 회로기판.
  9. 제1항에 있어서, 도체층에 포함된 회토류원소와 알카리토류원소로 이루어진 군으로부터 선택된 적어도 하나의 원소가 산화물 환산으로 0.01 내지 15중량%의 양에 포함되는 것을 특징으로 하는 회로기판.
  10. 제6항에 있어서, 회토류원소와 알카리토류원소로 이루어진 군으로부터 선택된 적어도 하나의 원소와, 도체층에 포함된 Al원소 Si원소중 적어도 하나와의 합이 산화물 환산으로 0.05 내지 20 중량%인 것을 특징으로 하는 회로기판.
  11. 회토류원소와 알카리토류원소로 이루어진 군으로부터 선택된 적어도 하나의 원소를 소결첨가제로서 α-Si3N4에 첨가하고, 그 혼합물을 소결하여 절연체층을 형성하는 단계와; 회토류원소와 알카리토류원소로 이루어진 군으로부터 선택된 적어도 하나의 원소를 주기율표의 IVb, Vb, VIb족으로 이루어진 군으로부터 선택된 적어도 하나의 원소에 첨가하여 도체층을 형성하는 단계 및; 절연체층과 도체층을 동시에 소결하여 회로기판을 형성하는 단계를 구비하여 이루어진 것을 특징으로 하는 회로기판의 제조방법.
  12. 제11항에 있어서, Al원소와 Si원소중 적어도 하나가 도체층을 형성하는 단계에 더 부가되는 것을 특징으로 하는 회로기판의 제조방법.
  13. 적어도 하나의 절연층과 적어도 하나의 도체층을 갖춘 회로기판에 있어서, 전체 절연체중 적어도 하나가 주성분으로서 β-Si3N4를 포함하는 소결체임과 더불어 적어도 하나의 원소가 회토류원소가 알카리토류원소로 이루어진 군으로부터 선택되고, 전체 도체층중 적어도 하나가 주성분으로서 Mo와 W중 적어도 하나를 포함함과 더불어 적어도 하나의 원소가 주기율표의 VIII족으로 이루어진 군으로부터 선택되는 것을 특징으로 하는 회로기판.
  14. 제13항에 있어서, 전체 도체층 사이의 적어도 하나의 층이 회토류원소와 알카리토류원소로 이루어진 군으로부터 선택된 적어도 하나의 원소를 더 포함하는 것을 특징으로 하는 회로기판.
  15. 적어도 하나의 절연층과 적어도 하나의 도체층을 갖춘 회로기판에 있어서, 전체 절연체중 적어도 하나가 주성분으로서 β-Si3N4를 포함하는 소결체임과 더불어 적어도 하나의 원소가 회토류원소가 알카리토류원소로 이루어진 군으로부터 선택되고, 전체 도체층중 적어도 하나가 주성분으로서 Mo와 W중 적어도 하나를 포함함과 더불어 AIN을 더 포함하는 것을 특징으로 하는 회로기판.
  16. 청구항 제1항에 따른 회로기판상에 탑재된 반도체소자로 이루어진 것을 특징으로 하는 반도체장치.
  17. 청구항 제13항에 따른 회로기판상에 탑재된 반도체소자로 이루어진 것을 특징으로 하는 반도체장치.
  18. 청구항 제16항에 따른 회로기판상에 탑재된 반도체소자로 이루어진 것을 특징으로 하는 반도체장치.
  19. 회토류원소와 알카리토류원소로 이루어진 군으로부터 선택된 적어도 하나의 원소를 소결첨가제로 α-Si3N4에 첨가하고, 그 혼합물을 소결하여 절연체층을 형성하는 단계와; 주기율표의 VIII족으로 이루어진 군으로부터 선택된 적어도 하나의 원소를 Mo중 W중 적어도 하나에 첨가하여 도체층을 형성하는 단계 및; 절연체층과 도체층을 동시에 소결하여 회로기판을 형성하는 단계를 구비하여 이루어진 것을 특징으로 하는 회로기판의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960042431A 1995-09-29 1996-09-25 고강도 고신뢰성 회로기판 및 그 제조방법 KR100261793B1 (ko)

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JP25216895A JP3618422B2 (ja) 1995-09-29 1995-09-29 高強度回路基板およびその製造方法
JP06953296A JP3678485B2 (ja) 1996-03-26 1996-03-26 高強度高信頼性回路基板およびその製造方法
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JP3855947B2 (ja) * 2003-03-10 2006-12-13 株式会社村田製作所 電子部品装置およびその製造方法
US20100025089A1 (en) * 2004-01-07 2010-02-04 Jun Taketatsu Circuit connection material, film-shaped circuit connection material using the same, circuit member connection structure, and manufacturing method thereof
WO2005105919A1 (ja) * 2004-04-30 2005-11-10 Kureha Corporation 封止用樹脂組成物及び樹脂封止された半導体装置
US20100065311A1 (en) * 2006-07-03 2010-03-18 Hitachi Chemical Company, Ltd. Conductive particle, adhesive composition, circuit-connecting material, circuit-connecting structure, and method for connection of circuit member
US10269688B2 (en) * 2013-03-14 2019-04-23 General Electric Company Power overlay structure and method of making same
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US4695517A (en) * 1985-05-31 1987-09-22 Ngk Spark Plug Co., Ltd. Composite layer aluminum nitride base sintered body
US5001089A (en) * 1985-06-28 1991-03-19 Kabushiki Kaisha Toshiba Aluminum nitride sintered body
US4770953A (en) * 1986-02-20 1988-09-13 Kabushiki Kaisha Toshiba Aluminum nitride sintered body having conductive metallized layer
US4882212A (en) * 1986-10-30 1989-11-21 Olin Corporation Electronic packaging of components incorporating a ceramic-glass-metal composite
US4883704A (en) * 1987-03-30 1989-11-28 Kabushiki Kaisha Toshiba Circuit substrate comprising nitride type ceramics, method for preparing it, and metallizing composition for use in it
JPH0461293A (ja) * 1990-06-29 1992-02-27 Toshiba Corp 回路基板及びその製造方法
JPH0727995B2 (ja) * 1990-09-18 1995-03-29 日本碍子株式会社 セラミック配線基板
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