KR920020502A - 센스 증폭기 - Google Patents

센스 증폭기 Download PDF

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Publication number
KR920020502A
KR920020502A KR1019910005620A KR910005620A KR920020502A KR 920020502 A KR920020502 A KR 920020502A KR 1019910005620 A KR1019910005620 A KR 1019910005620A KR 910005620 A KR910005620 A KR 910005620A KR 920020502 A KR920020502 A KR 920020502A
Authority
KR
South Korea
Prior art keywords
mos transistor
sense amplifier
gate terminal
mos
transistor
Prior art date
Application number
KR1019910005620A
Other languages
English (en)
Other versions
KR930008315B1 (ko
Inventor
장성준
Original Assignee
정몽헌
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 정몽헌, 현대전자산업 주식회사 filed Critical 정몽헌
Priority to KR1019910005620A priority Critical patent/KR930008315B1/ko
Publication of KR920020502A publication Critical patent/KR920020502A/ko
Application granted granted Critical
Publication of KR930008315B1 publication Critical patent/KR930008315B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Amplifiers (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)

Abstract

내용 없음

Description

센스 증폭기
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도 (a), (b), (c), (d)는 종래 기술의 센스 증폭기의 동작 파형도,
제3도는 본 발명의 일실시예를 나타내는 회로도.

Claims (1)

  1. 센서 증폭기에 있어서, 하이 상태 전압이 게이트단에 인가되는 제1MOS트랜지스터(N7), 하이 상태 전압이 게이트단에 인가되는 제2MOS트랜지스터(P6), 상기 제1′MOS트랜지스터(N7)에 연결되는 제3MOS 트랜지스터(P5), 상기 제2MOS트랜지스터(P6)에 연결되는 제4MOS 트랜지스터(N8), 제1MOS트랜지스터(N7)에 드레인단이 연결되며 상기 제2MOS 트랜지스터(P6)에 게이트단이 연결된 제5MOS 트랜지스터(N9), 제2MOS트랜지스터(P6)에 드레인단이 연결되어 상기 제1MOS 트랜지스터(N7)에 게이트단이 연결된 제6MOS 트랜지스터(N10), 상기 제5 및 제6MOS트랜지스터(N9, N10)에 연결된 제7MOS트랜지스터(N11)로 구성됨을 특징으로 하는 센스 증폭기.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019910005620A 1991-04-09 1991-04-09 센스 증폭기 KR930008315B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910005620A KR930008315B1 (ko) 1991-04-09 1991-04-09 센스 증폭기

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910005620A KR930008315B1 (ko) 1991-04-09 1991-04-09 센스 증폭기

Publications (2)

Publication Number Publication Date
KR920020502A true KR920020502A (ko) 1992-11-21
KR930008315B1 KR930008315B1 (ko) 1993-08-27

Family

ID=19313036

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910005620A KR930008315B1 (ko) 1991-04-09 1991-04-09 센스 증폭기

Country Status (1)

Country Link
KR (1) KR930008315B1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5281556B2 (ja) * 2009-12-07 2013-09-04 セイコーインスツル株式会社 物理量センサ

Also Published As

Publication number Publication date
KR930008315B1 (ko) 1993-08-27

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