KR920013645A - 투영노광방법 - Google Patents
투영노광방법 Download PDFInfo
- Publication number
- KR920013645A KR920013645A KR1019910022177A KR910022177A KR920013645A KR 920013645 A KR920013645 A KR 920013645A KR 1019910022177 A KR1019910022177 A KR 1019910022177A KR 910022177 A KR910022177 A KR 910022177A KR 920013645 A KR920013645 A KR 920013645A
- Authority
- KR
- South Korea
- Prior art keywords
- projection exposure
- exposure method
- wafer
- optical system
- driving
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 11
- 238000003384 imaging method Methods 0.000 claims 6
- 230000003287 optical effect Effects 0.000 claims 6
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000002689 soil Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/42—Bombardment with radiation
- H01L21/423—Bombardment with radiation with high-energy radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
- G03F7/70333—Focus drilling, i.e. increase in depth of focus for exposure by modulating focus during exposure [FLEX]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본원 발명을 실시하기 위해 사용되는 투영노광장치의 일구성예를 나타내는 모식도, 제4a도 내지 제4c도는 본원 발명을 3단계법에 적용한 경우의 결상면의 위치설정의 일예를 나타내는 모식적 단면도로서, 제4a도는 마이너스포커스시, 제4b도는 센터포커스시, 제4c도는 플러스포커스시를 각각 나타낸다 제5도는 본원 발명을 3단계법에 적용한 경우의 광강도 콘트라스트곡선을 나타내는 특성도, 제6도는 본원 발명을 적용한 경우의 Z스테이지의 이동속도의 변화패턴의 일예를 나타내는 특성도.
Claims (8)
- 투영광학계에 의해 웨이퍼상에 포토마스크의 패턴을 투영하는 투영노광방법에 있어서, 상기 웨이퍼상에서 상기 패터의 결상면을 상기 광학계의 광측방향에 따라 소정의 범위내에서 3위치 이상에 설정하고, 상기 범위내의 중앙근방에 있어서의 노광량이 상기 범위의 양단부보다 작게되도록 이들 위치에서 노광동작을 단계적으로 행하는 것을 특징으로 하는 투영노광방법.
- 제1항에 있어서, 상기 결상면에 설정은 상기 투영광학계를 구동함으로써 행하는 것을 특징으로 하는 투영노광방법.
- 제1항에 있어서, 상기 결상면의 설정은 상기 포토마스크를 구동함으로써 행하는 것을 특징으로 하는 투영노광방법.
- 제1항에 있어서, 상기 결상면의 설정은 상기 웨이퍼를 구동함으로서 행하는 것을 특징으로 하는 투영노광방접.
- 투영광학계에 의해 웨이퍼상에 포토마스크의 패턴을 투영하는 투영노광법에 있어서, 상기 웨이퍼상에서 상기 패턴의 결상면을 상기 광학계의 광측방향에 따라 소정의 범위내에서 이동시키고, 상기 범위내의 중앙근방에 있어서의 상기 결상면의 이동속도가 상기 범위의 양단부보다 크게 되도록 노광동작을 연속적으로 행하는 것을 특징으로 하는 투영노광방법.
- 제5항에 있어서, 상기 결상면의 이동은 상기 토영광학계를 구동함으로서 행하는 것을 특징으로 하는 투영노광방법.
- 제5항에 있어서, 상기 결상면의 이동은 상기 포토마스크를 구동함으로서 행하는 것을 특징으로 하는 투영노광방법.
- 제5항에 있어서, 상기 결상면의 이동은 상기 웨이퍼를 구동함으로서 행하는 것을 특징으로 하는 투영노광방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP90-405,362 | 1990-12-06 | ||
JP2405362A JP2705312B2 (ja) | 1990-12-06 | 1990-12-06 | 投影露光方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR920013645A true KR920013645A (ko) | 1992-07-29 |
KR0184000B1 KR0184000B1 (ko) | 1999-04-15 |
Family
ID=18514967
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910022177A KR0184000B1 (ko) | 1990-12-06 | 1991-12-05 | 투영노광방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5255050A (ko) |
EP (1) | EP0489426B1 (ko) |
JP (1) | JP2705312B2 (ko) |
KR (1) | KR0184000B1 (ko) |
DE (1) | DE69127349T2 (ko) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5343270A (en) * | 1990-10-30 | 1994-08-30 | Nikon Corporation | Projection exposure apparatus |
JP3234891B2 (ja) * | 1990-10-30 | 2001-12-04 | 株式会社ニコン | 投影露光装置 |
US6020950A (en) * | 1992-02-24 | 2000-02-01 | Nikon Corporation | Exposure method and projection exposure apparatus |
US6404482B1 (en) | 1992-10-01 | 2002-06-11 | Nikon Corporation | Projection exposure method and apparatus |
KR100300618B1 (ko) * | 1992-12-25 | 2001-11-22 | 오노 시게오 | 노광방법,노광장치,및그장치를사용하는디바이스제조방법 |
JP2852169B2 (ja) * | 1993-02-25 | 1999-01-27 | 日本電気株式会社 | 投影露光方法および装置 |
US5659384A (en) * | 1993-04-09 | 1997-08-19 | Canon Kabushiki Kaisha | Position detection apparatus and method |
JP3255312B2 (ja) * | 1993-04-28 | 2002-02-12 | 株式会社ニコン | 投影露光装置 |
JP3291849B2 (ja) * | 1993-07-15 | 2002-06-17 | 株式会社ニコン | 露光方法、デバイス形成方法、及び露光装置 |
IL106619A0 (en) * | 1993-08-08 | 1993-12-08 | Scitex Corp Ltd | Apparatus and method for exposing a photosensitive substrate |
JP3425249B2 (ja) * | 1995-01-23 | 2003-07-14 | 東芝機械株式会社 | 試料ホルダの固定装置 |
US5621500A (en) * | 1995-05-25 | 1997-04-15 | Nikon Corporation | Method and apparatus for projection exposure |
US5635285A (en) * | 1995-06-07 | 1997-06-03 | International Business Machines Corporation | Method and system for controlling the relative size of images formed in light-sensitive media |
JPH09283427A (ja) * | 1996-04-10 | 1997-10-31 | Nikon Corp | 露光方法及び投影露光装置 |
KR0174997B1 (ko) * | 1996-12-20 | 1999-03-20 | 김광호 | 노광설비의 이중노광 방지장치 |
JP3678079B2 (ja) * | 1999-10-26 | 2005-08-03 | ウシオ電機株式会社 | マスクとワークの間隔設定手段を備えたコンタクト露光装置 |
TW473823B (en) * | 1999-11-18 | 2002-01-21 | Nippon Kogaku Kk | Exposure method as well as exposure apparatus, and method for manufacturing device |
US20030022112A1 (en) * | 2001-07-27 | 2003-01-30 | Juliana Arifin | Structuring method |
DE10233209A1 (de) * | 2002-07-22 | 2004-02-05 | Infineon Technologies Ag | Verfahren zum Bestrahlen eines Resists |
DE10339514B4 (de) * | 2003-08-27 | 2008-08-07 | Qimonda Ag | Verfahren zur Belichtung eines Substrates |
US7057709B2 (en) | 2003-12-04 | 2006-06-06 | International Business Machines Corporation | Printing a mask with maximum possible process window through adjustment of the source distribution |
JP2011511432A (ja) * | 2008-01-02 | 2011-04-07 | ボード オブ リージェンツ, ザ ユニバーシティ オブ テキサス システム | マイクロデバイス製造 |
JP6013930B2 (ja) * | 2013-01-22 | 2016-10-25 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US10274830B2 (en) | 2016-01-27 | 2019-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for dynamic lithographic exposure |
DE102017100340B4 (de) * | 2016-01-27 | 2021-04-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Verfahren zum Entwickeln eines lichtempfindlichen Materials und Fotolithografiewerkzeug |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4239790A (en) * | 1979-09-12 | 1980-12-16 | Rca Corporation | Method of defining a photoresist layer |
JPS5817446A (ja) * | 1981-07-24 | 1983-02-01 | Hitachi Ltd | 投影露光方法および装置 |
JPH0810666B2 (ja) * | 1986-09-05 | 1996-01-31 | 株式会社日立製作所 | パターン形成方法 |
US4869999A (en) * | 1986-08-08 | 1989-09-26 | Hitachi, Ltd. | Method of forming pattern and projection aligner for carrying out the same |
US4904569A (en) * | 1986-08-08 | 1990-02-27 | Hitachi, Ltd. | Method of forming pattern and projection aligner for carrying out the same |
US4937619A (en) * | 1986-08-08 | 1990-06-26 | Hitachi, Ltd. | Projection aligner and exposure method |
JP3234891B2 (ja) * | 1990-10-30 | 2001-12-04 | 株式会社ニコン | 投影露光装置 |
-
1990
- 1990-12-06 JP JP2405362A patent/JP2705312B2/ja not_active Expired - Fee Related
-
1991
- 1991-12-04 EP EP91120850A patent/EP0489426B1/en not_active Expired - Lifetime
- 1991-12-04 US US07/802,377 patent/US5255050A/en not_active Expired - Lifetime
- 1991-12-04 DE DE69127349T patent/DE69127349T2/de not_active Expired - Fee Related
- 1991-12-05 KR KR1019910022177A patent/KR0184000B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US5255050A (en) | 1993-10-19 |
EP0489426B1 (en) | 1997-08-20 |
EP0489426A2 (en) | 1992-06-10 |
KR0184000B1 (ko) | 1999-04-15 |
JPH04209516A (ja) | 1992-07-30 |
DE69127349T2 (de) | 1998-03-19 |
DE69127349D1 (de) | 1997-09-25 |
JP2705312B2 (ja) | 1998-01-28 |
EP0489426A3 (en) | 1992-09-16 |
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