KR920013645A - 투영노광방법 - Google Patents

투영노광방법 Download PDF

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Publication number
KR920013645A
KR920013645A KR1019910022177A KR910022177A KR920013645A KR 920013645 A KR920013645 A KR 920013645A KR 1019910022177 A KR1019910022177 A KR 1019910022177A KR 910022177 A KR910022177 A KR 910022177A KR 920013645 A KR920013645 A KR 920013645A
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KR
South Korea
Prior art keywords
projection exposure
exposure method
wafer
optical system
driving
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KR1019910022177A
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English (en)
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KR0184000B1 (ko
Inventor
데쓰야 기다가와
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오가 노리오
소니 가부시기가이샤
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Application filed by 오가 노리오, 소니 가부시기가이샤 filed Critical 오가 노리오
Publication of KR920013645A publication Critical patent/KR920013645A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/42—Bombardment with radiation
    • H01L21/423—Bombardment with radiation with high-energy radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
    • G03F7/70333—Focus drilling, i.e. increase in depth of focus for exposure by modulating focus during exposure [FLEX]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

내용 없음

Description

투영노광방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본원 발명을 실시하기 위해 사용되는 투영노광장치의 일구성예를 나타내는 모식도, 제4a도 내지 제4c도는 본원 발명을 3단계법에 적용한 경우의 결상면의 위치설정의 일예를 나타내는 모식적 단면도로서, 제4a도는 마이너스포커스시, 제4b도는 센터포커스시, 제4c도는 플러스포커스시를 각각 나타낸다 제5도는 본원 발명을 3단계법에 적용한 경우의 광강도 콘트라스트곡선을 나타내는 특성도, 제6도는 본원 발명을 적용한 경우의 Z스테이지의 이동속도의 변화패턴의 일예를 나타내는 특성도.

Claims (8)

  1. 투영광학계에 의해 웨이퍼상에 포토마스크의 패턴을 투영하는 투영노광방법에 있어서, 상기 웨이퍼상에서 상기 패터의 결상면을 상기 광학계의 광측방향에 따라 소정의 범위내에서 3위치 이상에 설정하고, 상기 범위내의 중앙근방에 있어서의 노광량이 상기 범위의 양단부보다 작게되도록 이들 위치에서 노광동작을 단계적으로 행하는 것을 특징으로 하는 투영노광방법.
  2. 제1항에 있어서, 상기 결상면에 설정은 상기 투영광학계를 구동함으로써 행하는 것을 특징으로 하는 투영노광방법.
  3. 제1항에 있어서, 상기 결상면의 설정은 상기 포토마스크를 구동함으로써 행하는 것을 특징으로 하는 투영노광방법.
  4. 제1항에 있어서, 상기 결상면의 설정은 상기 웨이퍼를 구동함으로서 행하는 것을 특징으로 하는 투영노광방접.
  5. 투영광학계에 의해 웨이퍼상에 포토마스크의 패턴을 투영하는 투영노광법에 있어서, 상기 웨이퍼상에서 상기 패턴의 결상면을 상기 광학계의 광측방향에 따라 소정의 범위내에서 이동시키고, 상기 범위내의 중앙근방에 있어서의 상기 결상면의 이동속도가 상기 범위의 양단부보다 크게 되도록 노광동작을 연속적으로 행하는 것을 특징으로 하는 투영노광방법.
  6. 제5항에 있어서, 상기 결상면의 이동은 상기 토영광학계를 구동함으로서 행하는 것을 특징으로 하는 투영노광방법.
  7. 제5항에 있어서, 상기 결상면의 이동은 상기 포토마스크를 구동함으로서 행하는 것을 특징으로 하는 투영노광방법.
  8. 제5항에 있어서, 상기 결상면의 이동은 상기 웨이퍼를 구동함으로서 행하는 것을 특징으로 하는 투영노광방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910022177A 1990-12-06 1991-12-05 투영노광방법 KR0184000B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2405362A JP2705312B2 (ja) 1990-12-06 1990-12-06 投影露光方法
JP90-405,362 1990-12-06

Publications (2)

Publication Number Publication Date
KR920013645A true KR920013645A (ko) 1992-07-29
KR0184000B1 KR0184000B1 (ko) 1999-04-15

Family

ID=18514967

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910022177A KR0184000B1 (ko) 1990-12-06 1991-12-05 투영노광방법

Country Status (5)

Country Link
US (1) US5255050A (ko)
EP (1) EP0489426B1 (ko)
JP (1) JP2705312B2 (ko)
KR (1) KR0184000B1 (ko)
DE (1) DE69127349T2 (ko)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3234891B2 (ja) * 1990-10-30 2001-12-04 株式会社ニコン 投影露光装置
US5343270A (en) * 1990-10-30 1994-08-30 Nikon Corporation Projection exposure apparatus
US6020950A (en) * 1992-02-24 2000-02-01 Nikon Corporation Exposure method and projection exposure apparatus
US6404482B1 (en) 1992-10-01 2002-06-11 Nikon Corporation Projection exposure method and apparatus
KR100300618B1 (ko) * 1992-12-25 2001-11-22 오노 시게오 노광방법,노광장치,및그장치를사용하는디바이스제조방법
JP2852169B2 (ja) * 1993-02-25 1999-01-27 日本電気株式会社 投影露光方法および装置
US5659384A (en) * 1993-04-09 1997-08-19 Canon Kabushiki Kaisha Position detection apparatus and method
JP3255312B2 (ja) * 1993-04-28 2002-02-12 株式会社ニコン 投影露光装置
JP3291849B2 (ja) * 1993-07-15 2002-06-17 株式会社ニコン 露光方法、デバイス形成方法、及び露光装置
IL106619A0 (en) * 1993-08-08 1993-12-08 Scitex Corp Ltd Apparatus and method for exposing a photosensitive substrate
JP3425249B2 (ja) * 1995-01-23 2003-07-14 東芝機械株式会社 試料ホルダの固定装置
US5621500A (en) * 1995-05-25 1997-04-15 Nikon Corporation Method and apparatus for projection exposure
US5635285A (en) * 1995-06-07 1997-06-03 International Business Machines Corporation Method and system for controlling the relative size of images formed in light-sensitive media
JPH09283427A (ja) * 1996-04-10 1997-10-31 Nikon Corp 露光方法及び投影露光装置
KR0174997B1 (ko) * 1996-12-20 1999-03-20 김광호 노광설비의 이중노광 방지장치
JP3678079B2 (ja) 1999-10-26 2005-08-03 ウシオ電機株式会社 マスクとワークの間隔設定手段を備えたコンタクト露光装置
TW473823B (en) * 1999-11-18 2002-01-21 Nippon Kogaku Kk Exposure method as well as exposure apparatus, and method for manufacturing device
US20030022112A1 (en) * 2001-07-27 2003-01-30 Juliana Arifin Structuring method
DE10233209A1 (de) * 2002-07-22 2004-02-05 Infineon Technologies Ag Verfahren zum Bestrahlen eines Resists
DE10339514B4 (de) * 2003-08-27 2008-08-07 Qimonda Ag Verfahren zur Belichtung eines Substrates
US7057709B2 (en) * 2003-12-04 2006-06-06 International Business Machines Corporation Printing a mask with maximum possible process window through adjustment of the source distribution
CN101960577A (zh) * 2008-01-02 2011-01-26 得克萨斯州大学系统董事会 微器件制造
JP6013930B2 (ja) * 2013-01-22 2016-10-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US10274830B2 (en) 2016-01-27 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for dynamic lithographic exposure
DE102017100340B4 (de) 2016-01-27 2021-04-29 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zum Entwickeln eines lichtempfindlichen Materials und Fotolithografiewerkzeug

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JPS5817446A (ja) * 1981-07-24 1983-02-01 Hitachi Ltd 投影露光方法および装置
US4904569A (en) * 1986-08-08 1990-02-27 Hitachi, Ltd. Method of forming pattern and projection aligner for carrying out the same
US4869999A (en) * 1986-08-08 1989-09-26 Hitachi, Ltd. Method of forming pattern and projection aligner for carrying out the same
US4937619A (en) * 1986-08-08 1990-06-26 Hitachi, Ltd. Projection aligner and exposure method
JPH0810666B2 (ja) * 1986-09-05 1996-01-31 株式会社日立製作所 パターン形成方法
JP3234891B2 (ja) * 1990-10-30 2001-12-04 株式会社ニコン 投影露光装置

Also Published As

Publication number Publication date
JP2705312B2 (ja) 1998-01-28
EP0489426B1 (en) 1997-08-20
DE69127349D1 (de) 1997-09-25
US5255050A (en) 1993-10-19
EP0489426A2 (en) 1992-06-10
JPH04209516A (ja) 1992-07-30
EP0489426A3 (en) 1992-09-16
DE69127349T2 (de) 1998-03-19
KR0184000B1 (ko) 1999-04-15

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