KR920008789A - 반도체 정류장치와 그것을 이용하여 만든 전파 정류기 - Google Patents

반도체 정류장치와 그것을 이용하여 만든 전파 정류기 Download PDF

Info

Publication number
KR920008789A
KR920008789A KR1019910017579A KR910017579A KR920008789A KR 920008789 A KR920008789 A KR 920008789A KR 1019910017579 A KR1019910017579 A KR 1019910017579A KR 910017579 A KR910017579 A KR 910017579A KR 920008789 A KR920008789 A KR 920008789A
Authority
KR
South Korea
Prior art keywords
semiconductor
silica powder
resin layer
mass
parts
Prior art date
Application number
KR1019910017579A
Other languages
English (en)
Other versions
KR100193161B1 (ko
Inventor
가즈또요 나리따
요이찌 나까지마
히로시게 오끼노시마
타다시 노사까
Original Assignee
원본미기재
가부시기가이샤 히다찌 세이사꾸쇼
신에쯔 케미칼 가부시기가이샤
닛뽄 덴소 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 원본미기재, 가부시기가이샤 히다찌 세이사꾸쇼, 신에쯔 케미칼 가부시기가이샤, 닛뽄 덴소 가부시기가이샤 filed Critical 원본미기재
Publication of KR920008789A publication Critical patent/KR920008789A/ko
Application granted granted Critical
Publication of KR100193161B1 publication Critical patent/KR100193161B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/112—Mixed assemblies
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02K—DYNAMO-ELECTRIC MACHINES
    • H02K11/00—Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection
    • H02K11/04—Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection for rectification
    • H02K11/049—Rectifiers associated with stationary parts, e.g. stator cores
    • H02K11/05—Rectifiers associated with casings, enclosures or brackets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331—Disposition
    • H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01009—Fluorine [F]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01011—Sodium [Na]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0106—Neodymium [Nd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

내용 없음

Description

반도체 정류장치와 그것을 이용하여 만든 전파 정류기
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 정류장치의 일실시예를 나타내는 개략 단면도,
제2도는 본 발명의 반도체 정류장치의 다른 실시예를 나타내는 개략 단면도,
제3도는 본 발명의 반도체 정류장치의 또 다른 실시예를 나타내는 개략 단면도.

Claims (18)

  1. 반도체 정류 장치에 있어서, 금속용기와, 주표면이 상기 용기의 하측면에 접착된 pn접합된 반도체 칩과, 상기 반도체 칩이 다른 주표면에 접착된 리드와, 상기 반도체 칩의 노출부를 덮으며, 실리카 분말을 포함하는 수지부재로 구성되는 반도체 정류장치.
  2. 제1항에 있어서, 상기 실리콘 수지층은 수지의 100질량부에 대해서 실리카 분말의 40내지 120질량부가 조합되는 것을 특징으로 하는 반도체 정류장치.
  3. 제2항에 있어서, 상기 실리카 분말이 평균입자 크기는 2내지 6㎛인 것을 특징으로 하는 반도체 정류장치.
  4. 제1항에 있어서, 상기 수지부재는 상기 반도체 칩의 노출부를 덮으며 실리카 분말을 포함하는 실리콘 수지층과, 상기 실리콘 수지층에 적층된 에폭시 수지층으로 이루어진 것을 특징으로 하는 반도체 정류장치.
  5. 제4항에 있어서, 상기 실리콘 수지층은 실리콘 수지의 100질량부에 대하여 실리카 분말이 40내지 120질량부가 조합되는 것을 특징으로 하는 반도체 정류장치.
  6. 제5항에 있어서, 상기 실리카 분말이 평균입자 크기는 2내지 6㎛인 것을 특징으로 하는 반도체 정류장치.
  7. 제1항에 있어서, 상기 수지 부재는 상기 반도체 칩의 노출부를 덮는 폴리아미드 수지층과 상기 폴리아미드 수지층에 적층되며 실리카 분말을 포함하는 실리콘 수지층으로 구성되는 것을 특징으로 하는 반도체 정류장치.
  8. 제7항에 있어서, 상기 실리콘 수지층은 상기 실리콘 수지의 100질량부에 대해서 실리카 분말의 40내지 120질량부가 조성되는 것을 특징으로 하는 반도체 정류장치.
  9. 제8항에 있어서, 상기 실리카 분말의 평균입자 크기는 2내지 6㎛인 것을 특징으로 하는 반도체 정류장치.
  10. 전파 정류기에 있어서, 전기적 절연되며 D.C.측 단자로 이용되는 제1과 제2라디에이터와, 상기 제1라디에이터상에 유지된 금속용기로 각각이 형성되며, 반도체 칩이 접촉한 p와n층, 상기 금속용기의 하측면에 접착된 상기 p층, 상기 반도체 칩의 상기 n층에 접착된 리드, 그리고 상기 반도체 칩의 노출부를 덮는 수지부재로 구성되는 복수의 제1반도체 정류장치와, 상기 제2라디에이터상에 유지된 금속용기로 각각이 형성되며, 반도체 칩이 접촉하는 p와 n층, 상기 금속용기의 하측면에 접착된 상기 n층, 상기 반도체 칩의 상기 p층에 접착된 리드, 그리고 상기 반도체 칩의 노출부를 덮는 수지부재로 구성되는 복수의 제2반도체 정류장치와, 객수는 위상이 갯수와 동일하며, 상기 제1반도체 정류 장치의 상기 리드가 상기 제2반도체 정류장치의 상기 리드에 연결되는 복수의 A.C.측 단자로 이루어지는 전파 정류기.
  11. 제10항에 있어서, 상기 제1과 제2반도체 정류장치의 상기 실리콘 수지는 상기 실리콘 수지의 100질량부에 대해서 실리카 분말의 40내지 120질량부가 조성된 것을 특징으로 하는 전파정류기.
  12. 제11항에 있어서, 상기 제1과 제2반도체 정류장치의 상기 실리콘 수지층에 포함된 상기 실리카 분말의 평균입자 크기는 2내지 6㎛인 것을 특징으로 하는 전파정류기.
  13. 제10항에 있어서, 상기 수지부재가 상기 반도체 칩의 노출부를 덮는 폴리이미드수지층과 상기 폴리이미드 수지층에 적층되며 실리카 분말을 포함하는 실리콘 수지층으로 이루어진 것을 특징으로 하는 전파정류기.
  14. 제13항에 있어서, 상기 실리콘 수지층은 상기 실리콘 수지의 100질량부에 대하여 실리카 분말의 40내지 120질량부가 조성된 것을 특징으로 하는 전파정류기.
  15. 제14항에 있어서, 상기 실리카 분말의 평균입자 크기는 2내지 6㎛인 것을 특징으로 하는 전파정류기.
  16. 제10항에 있어서, 상기 수지부재는 상기 반도체 칩의 노출부를 덮으며 상기 실리콘 수지층상에 적층된 에폭시 수지층으로 구성된 것을 특징으로 하는 전파정류기.
  17. 제16항에 있어서, 상기 실리콘 수지층은 실리콘 수지의 100질량부에 대하여 실리카 분말의 40내지 120질량부가 조성된 것을 특징으로 하는 전파정류기.
  18. 제17항에 있어서, 상기 실리카 분말의 평균입자 크기는 2내지 6㎛인 것을 특징으로 하는 전파정류기.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910017579A 1990-10-08 1991-10-08 반도체 정류장치와 그것을 이용하여 만든 전파정류기 KR100193161B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2270188A JP2858166B2 (ja) 1990-10-08 1990-10-08 半導体整流素子及びそれを使った全波整流装置
JP90-270188 1990-10-08

Publications (2)

Publication Number Publication Date
KR920008789A true KR920008789A (ko) 1992-05-28
KR100193161B1 KR100193161B1 (ko) 1999-06-15

Family

ID=17482751

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910017579A KR100193161B1 (ko) 1990-10-08 1991-10-08 반도체 정류장치와 그것을 이용하여 만든 전파정류기

Country Status (5)

Country Link
US (1) US5302856A (ko)
EP (1) EP0480372B1 (ko)
JP (1) JP2858166B2 (ko)
KR (1) KR100193161B1 (ko)
DE (1) DE69120366T2 (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4403996A1 (de) * 1994-02-09 1995-08-10 Bosch Gmbh Robert Gleichrichteranordnung für einen Drehstromgenerator
FR2737618B1 (fr) * 1995-08-02 1997-10-24 Valeo Equip Electr Moteur Alternateur comportant des pieces d'adaptation pour diodes de pont redresseur, notamment pour vehicule automobile, et piece d'adaptation pour un tel alternateur
US5773885A (en) * 1996-06-06 1998-06-30 General Motors Corporation Thermally responsive compressive diode assembly
FR2768261B1 (fr) * 1997-09-08 2002-11-08 Valeo Equip Electr Moteur Embase pour diode de puissance d'alternateur de vehicule automobile
DE19828518A1 (de) * 1998-06-26 1999-12-30 Bosch Gmbh Robert Elektrische Maschine, vorzugsweise Drehstromgenerator mit Gleichrichter-Baueinheit
US6160309A (en) * 1999-03-25 2000-12-12 Le; Hiep Press-fit semiconductor package
US6614108B1 (en) * 2000-10-23 2003-09-02 Delphi Technologies, Inc. Electronic package and method therefor
JP2002359328A (ja) * 2001-03-29 2002-12-13 Hitachi Ltd 半導体装置
JP2007042900A (ja) * 2005-08-04 2007-02-15 Denso Corp 半導体装置
JP4875902B2 (ja) * 2006-02-08 2012-02-15 株式会社日立製作所 半導体装置
CN101424662B (zh) * 2007-10-31 2011-06-08 鸿富锦精密工业（深圳）有限公司 超声波扫描仪
CN101430305B (zh) * 2007-11-06 2011-03-23 鸿富锦精密工业（深圳）有限公司 超声波扫描仪
JP4961398B2 (ja) * 2008-06-30 2012-06-27 株式会社日立製作所 半導体装置
JP6641161B2 (ja) * 2015-11-18 2020-02-05 株式会社 日立パワーデバイス 半導体装置、およびそれを用いたオルタネータ

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4057825A (en) * 1975-07-18 1977-11-08 Hitachi, Ltd. Semiconductor device with composite metal heat-radiating plate onto which semiconductor element is soldered
JPS5273410U (ko) * 1975-11-28 1977-06-01
JPS542067A (en) * 1977-06-07 1979-01-09 Hitachi Ltd Semiconductor device
JPS55125657A (en) * 1979-03-20 1980-09-27 Nippon Denso Co Ltd Rectifier
JPS6040189B2 (ja) * 1979-09-21 1985-09-10 株式会社日立製作所 樹脂封止型半導体装置
JPS58147036A (ja) * 1982-02-26 1983-09-01 Hitachi Ltd 半導体装置の製造方法
JPS59172749A (ja) * 1983-03-23 1984-09-29 Toshiba Corp 半導体整流素子
US4720424A (en) * 1984-06-18 1988-01-19 Hoebbst Celanese Corporation Electronic component encapsulated with a composition comprising a polymer which is capable of forming an anisotropic melt phase and substantially incapable of further chain growth upon heating
JPS6164145A (ja) * 1984-09-05 1986-04-02 Mitsubishi Electric Corp 樹脂封止形半導体装置
DE3442132A1 (de) * 1984-11-17 1986-05-22 Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn Verfahren zur verkapselung von mikroelektronikschaltungen mit organischen komponenten
US4888634A (en) * 1987-07-24 1989-12-19 Linear Technology Corporation High thermal resistance bonding material and semiconductor structures using same
JP2712618B2 (ja) * 1989-09-08 1998-02-16 三菱電機株式会社 樹脂封止型半導体装置
US5005069A (en) * 1990-04-30 1991-04-02 Motorola Inc. Rectifier and method

Also Published As

Publication number Publication date
KR100193161B1 (ko) 1999-06-15
EP0480372A1 (en) 1992-04-15
US5302856A (en) 1994-04-12
JPH04146655A (ja) 1992-05-20
DE69120366T2 (de) 1996-11-07
EP0480372B1 (en) 1996-06-19
DE69120366D1 (de) 1996-07-25
JP2858166B2 (ja) 1999-02-17

Similar Documents

Publication Publication Date Title
US6927478B2 (en) Reduced size semiconductor package with stacked dies
KR920008789A (ko) 반도체 정류장치와 그것을 이용하여 만든 전파 정류기
US6326696B1 (en) Electronic package with interconnected chips
US7872335B2 (en) Lead frame-BGA package with enhanced thermal performance and I/O counts
US4994897A (en) Multi-level semiconductor package
KR970053679A (ko) 리드노출형 반도체 패키지
KR960005910A (ko) 반도체 집적 회로 칩상의 범프용 실링구조
KR960002762A (ko) 노이즈가 적은 적층 멀티칩 패키지
KR930001359A (ko) 방열 효율을 향상시킨 표면 실장형 패키지
KR930024140A (ko) 반도체장치 및 그 제조방법
US7659620B2 (en) Integrated circuit package employing a flexible substrate
KR960043144A (ko) 다중 칩 패키지 제조방법
JPS6118164A (ja) 半導体装置
US20080291637A1 (en) Small-sized communication module package
US3654527A (en) Unitary full wave inverter
JPS6130742B2 (ko)
JPH0795575B2 (ja) 半導体整流素子
JPS6020956Y2 (ja) 半導体受光素子
JPS6352445A (ja) 半導体装置
JPS63116451A (ja) 混成集積回路装置
KR940010298A (ko) 반도체 패키지 및 그의 제조방법
KR970063590A (ko) 탭 테이프를 적용한 칩 스케일 패키지
JPS61125044A (ja) 半導体装置
JPS59107554A (ja) 半導体モジユ−ル
KR910008830A (ko) 수지밀봉 반도체장치

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20081219

Year of fee payment: 11

LAPS Lapse due to unpaid annual fee