DE69120366T2 - Halbleiter-Gleichrichteranordnung und Vollweggleichrichter mit dieser Anordnung - Google Patents

Halbleiter-Gleichrichteranordnung und Vollweggleichrichter mit dieser Anordnung

Info

Publication number
DE69120366T2
DE69120366T2 DE69120366T DE69120366T DE69120366T2 DE 69120366 T2 DE69120366 T2 DE 69120366T2 DE 69120366 T DE69120366 T DE 69120366T DE 69120366 T DE69120366 T DE 69120366T DE 69120366 T2 DE69120366 T2 DE 69120366T2
Authority
DE
Germany
Prior art keywords
arrangement
rectifier
full wave
semiconductor
wave rectifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69120366T
Other languages
English (en)
Other versions
DE69120366D1 (de
Inventor
Kazutoyo Narita
Yoichi Nakajima
Hiroshige Okinoshima
Tadashi Nosaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Hitachi Ltd
Denso Corp
Original Assignee
Shin Etsu Chemical Co Ltd
Hitachi Ltd
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd, Hitachi Ltd, NipponDenso Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Application granted granted Critical
Publication of DE69120366D1 publication Critical patent/DE69120366D1/de
Publication of DE69120366T2 publication Critical patent/DE69120366T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/112—Mixed assemblies
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02K—DYNAMO-ELECTRIC MACHINES
    • H02K11/00—Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection
    • H02K11/04—Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection for rectification
    • H02K11/049—Rectifiers associated with stationary parts, e.g. stator cores
    • H02K11/05—Rectifiers associated with casings, enclosures or brackets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331—Disposition
    • H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01009—Fluorine [F]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01011—Sodium [Na]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0106—Neodymium [Nd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
DE69120366T 1990-10-08 1991-10-08 Halbleiter-Gleichrichteranordnung und Vollweggleichrichter mit dieser Anordnung Expired - Fee Related DE69120366T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2270188A JP2858166B2 (ja) 1990-10-08 1990-10-08 半導体整流素子及びそれを使った全波整流装置

Publications (2)

Publication Number Publication Date
DE69120366D1 DE69120366D1 (de) 1996-07-25
DE69120366T2 true DE69120366T2 (de) 1996-11-07

Family

ID=17482751

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69120366T Expired - Fee Related DE69120366T2 (de) 1990-10-08 1991-10-08 Halbleiter-Gleichrichteranordnung und Vollweggleichrichter mit dieser Anordnung

Country Status (5)

Country Link
US (1) US5302856A (de)
EP (1) EP0480372B1 (de)
JP (1) JP2858166B2 (de)
KR (1) KR100193161B1 (de)
DE (1) DE69120366T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4403996A1 (de) * 1994-02-09 1995-08-10 Bosch Gmbh Robert Gleichrichteranordnung für einen Drehstromgenerator
FR2737618B1 (fr) * 1995-08-02 1997-10-24 Valeo Equip Electr Moteur Alternateur comportant des pieces d'adaptation pour diodes de pont redresseur, notamment pour vehicule automobile, et piece d'adaptation pour un tel alternateur
US5773885A (en) * 1996-06-06 1998-06-30 General Motors Corporation Thermally responsive compressive diode assembly
FR2768261B1 (fr) * 1997-09-08 2002-11-08 Valeo Equip Electr Moteur Embase pour diode de puissance d'alternateur de vehicule automobile
DE19828518A1 (de) * 1998-06-26 1999-12-30 Bosch Gmbh Robert Elektrische Maschine, vorzugsweise Drehstromgenerator mit Gleichrichter-Baueinheit
US6160309A (en) * 1999-03-25 2000-12-12 Le; Hiep Press-fit semiconductor package
US6614108B1 (en) * 2000-10-23 2003-09-02 Delphi Technologies, Inc. Electronic package and method therefor
JP2002359328A (ja) * 2001-03-29 2002-12-13 Hitachi Ltd 半導体装置
JP2007042900A (ja) * 2005-08-04 2007-02-15 Denso Corp 半導体装置
JP4875902B2 (ja) * 2006-02-08 2012-02-15 株式会社日立製作所 半導体装置
CN101424662B (zh) * 2007-10-31 2011-06-08 鸿富锦精密工业（深圳）有限公司 超声波扫描仪
CN101430305B (zh) * 2007-11-06 2011-03-23 鸿富锦精密工业（深圳）有限公司 超声波扫描仪
JP4961398B2 (ja) * 2008-06-30 2012-06-27 株式会社日立製作所 半導体装置
JP6641161B2 (ja) * 2015-11-18 2020-02-05 株式会社 日立パワーデバイス 半導体装置、およびそれを用いたオルタネータ

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4057825A (en) * 1975-07-18 1977-11-08 Hitachi, Ltd. Semiconductor device with composite metal heat-radiating plate onto which semiconductor element is soldered
JPS5273410U (de) * 1975-11-28 1977-06-01
JPS542067A (en) * 1977-06-07 1979-01-09 Hitachi Ltd Semiconductor device
JPS55125657A (en) * 1979-03-20 1980-09-27 Nippon Denso Co Ltd Rectifier
JPS6040189B2 (ja) * 1979-09-21 1985-09-10 株式会社日立製作所 樹脂封止型半導体装置
JPS58147036A (ja) * 1982-02-26 1983-09-01 Hitachi Ltd 半導体装置の製造方法
JPS59172749A (ja) * 1983-03-23 1984-09-29 Toshiba Corp 半導体整流素子
US4720424A (en) * 1984-06-18 1988-01-19 Hoebbst Celanese Corporation Electronic component encapsulated with a composition comprising a polymer which is capable of forming an anisotropic melt phase and substantially incapable of further chain growth upon heating
JPS6164145A (ja) * 1984-09-05 1986-04-02 Mitsubishi Electric Corp 樹脂封止形半導体装置
DE3442132A1 (de) * 1984-11-17 1986-05-22 Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn Verfahren zur verkapselung von mikroelektronikschaltungen mit organischen komponenten
US4888634A (en) * 1987-07-24 1989-12-19 Linear Technology Corporation High thermal resistance bonding material and semiconductor structures using same
JP2712618B2 (ja) * 1989-09-08 1998-02-16 三菱電機株式会社 樹脂封止型半導体装置
US5005069A (en) * 1990-04-30 1991-04-02 Motorola Inc. Rectifier and method

Also Published As

Publication number Publication date
KR100193161B1 (ko) 1999-06-15
US5302856A (en) 1994-04-12
JPH04146655A (ja) 1992-05-20
JP2858166B2 (ja) 1999-02-17
EP0480372B1 (de) 1996-06-19
DE69120366D1 (de) 1996-07-25
EP0480372A1 (de) 1992-04-15
KR920008789A (ko) 1992-05-28

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