KR920003551A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

Info

Publication number
KR920003551A
KR920003551A KR1019910011159A KR910011159A KR920003551A KR 920003551 A KR920003551 A KR 920003551A KR 1019910011159 A KR1019910011159 A KR 1019910011159A KR 910011159 A KR910011159 A KR 910011159A KR 920003551 A KR920003551 A KR 920003551A
Authority
KR
South Korea
Prior art keywords
semiconductor device
mos transistors
power mos
semiconductor
driving means
Prior art date
Application number
KR1019910011159A
Other languages
English (en)
Other versions
KR950006484B1 (ko
Inventor
츠네오 나카야마
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR920003551A publication Critical patent/KR920003551A/ko
Application granted granted Critical
Publication of KR950006484B1 publication Critical patent/KR950006484B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Electronic Switches (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

내용 없음

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 각 실시예의 구성도.
제4도는 그 주요부의 등가회로도.

Claims (7)

  1. 동일 칩(31)내에 드레인끼리 공통으로 배열설치된 동일 체널형의 제1, 제2의 파워 MOS 트랜지스터(Q1,Q2)와 이들 트랜지스터(Q1,Q2)의 게이트에 각각 제어신호를 공급하는 구동수단을 구비하여 이루어진 것을 특징으로 하는 반도체 장치.
  2. 제1항에 있어서, 상기 구동수단이 광전변화소자(12-1,12-2)로 구성되고, 상기 제어신호가 발광소자(11)로부터의 빛을 광전변환시키는 상기 광전변환소자(12-1,12-2)에서 얻어지도록 된 것을 특징으로 하는 반도체 장치.
  3. 제1항에 있어서, 상기 구동수단이 트랜스(T)로 구성되고, 상기 제어신호가 트랜스(T)를 매개하여 얻어지도록 된 것을 특징으로 하는 반도체 장치.
  4. 제1항에 있어서, 상기 제1, 제2의 파워 MOS 트랜지스터(Q1,Q2) 2개로 단일의 스위칭소자를 구성하는 것을 특징으로 하는 반도체 장치.
  5. 제1항에 있어서, 상기 각 MOS 트랜지스터(Q1,Q2)와 구동수단에 의해 솔리드스테이트릴레이를 구성하는 것을 특징으로 하는 반도체 장치.
  6. 제2항에 있어서, 상기 광전변환소자(12-1,12-2)가 상기 각 파워 MOS 트랜지스터(Q1,Q2)와 함께 상기 칩(31)내에 집적화되는 것을 특징으로 하는 반도체 장치.
  7. 제1항에 있어서, 상기 제1, 제2의 파워 MOS 트랜지스터(Q1,Q2)가 형성되는 반도체층에는 상기 각 트랜지스터(Q1,Q2)간에 상기 반도체층과 동일도전형이면서 상기 반도체층보다 고농도의 층(41)이 설치된 것을 특징으로 하는 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910011159A 1990-07-03 1991-07-02 반도체장치 KR950006484B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP17595090A JP2856853B2 (ja) 1990-07-03 1990-07-03 半導体装置
JP02-175950 1990-07-03

Publications (2)

Publication Number Publication Date
KR920003551A true KR920003551A (ko) 1992-02-29
KR950006484B1 KR950006484B1 (ko) 1995-06-15

Family

ID=16005086

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910011159A KR950006484B1 (ko) 1990-07-03 1991-07-02 반도체장치

Country Status (3)

Country Link
US (1) US5105251A (ko)
JP (1) JP2856853B2 (ko)
KR (1) KR950006484B1 (ko)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993015538A1 (en) * 1992-02-03 1993-08-05 Micro Industries Power switch module
JP3352840B2 (ja) * 1994-03-14 2002-12-03 株式会社東芝 逆並列接続型双方向性半導体スイッチ
US5373434A (en) * 1994-03-21 1994-12-13 International Business Machines Corporation Pulse width modulated power supply
JPH0832060A (ja) * 1994-07-13 1996-02-02 Hitachi Ltd 半導体集積回路装置およびその製造方法
FR2731111B1 (fr) * 1995-02-23 1997-05-23 Texas Instruments France Dispositif de protection d'elements rechargeables et transistor mosfet equipant ce dispositif
US6552597B1 (en) * 2001-11-02 2003-04-22 Power Integrations, Inc. Integrated circuit with closely coupled high voltage output and offline transistor pair
US7099135B2 (en) * 2002-11-05 2006-08-29 Semiconductor Components Industries, L.L.C Integrated inrush current limiter circuit and method
US6865063B2 (en) * 2002-11-12 2005-03-08 Semiconductor Components Industries, Llc Integrated inrush current limiter circuit and method
JP2007165621A (ja) * 2005-12-14 2007-06-28 Toshiba Corp 光結合装置
JP2008153748A (ja) * 2006-12-14 2008-07-03 Matsushita Electric Ind Co Ltd 双方向スイッチ及び双方向スイッチの駆動方法
JP5407349B2 (ja) * 2009-01-15 2014-02-05 ダイキン工業株式会社 スイッチ回路
JP5600875B2 (ja) * 2009-01-19 2014-10-08 ダイキン工業株式会社 双方向スイッチ及びスイッチング素子
US9178412B2 (en) 2009-01-19 2015-11-03 Daikin Industries, Ltd. Bidirectional switch circuit configured to conduct current in reverse direction without applying an on-drive signal and power converter including the same
JP5686238B2 (ja) 2010-09-03 2015-03-18 ソニー株式会社 電気回路、充電制御装置、充電システム、制御方法、蓄電装置、および蓄電システム
DE102011114186B4 (de) * 2011-09-22 2015-08-27 Infineon Technologies Ag Leistungshalbleiteranordnung, Motorsteuerung oder Trennschalter damit
WO2015068194A1 (ja) * 2013-11-05 2015-05-14 株式会社日立製作所 半導体駆動装置
JP6266483B2 (ja) * 2014-09-19 2018-01-24 株式会社東芝 半導体装置
JP2017028213A (ja) * 2015-07-28 2017-02-02 新電元工業株式会社 半導体リレー素子及び半導体リレーモジュール
WO2021024643A1 (ja) * 2019-08-06 2021-02-11 富士電機株式会社 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6445173A (en) * 1987-08-13 1989-02-17 Fuji Electric Co Ltd Conductive modulation type mosfet
JPH0183352U (ko) * 1987-11-25 1989-06-02
JPH0787247B2 (ja) * 1988-05-27 1995-09-20 三菱電機株式会社 半導体装置
JPH0775260B2 (ja) * 1988-06-01 1995-08-09 株式会社日立製作所 半導体装置
JPH0793434B2 (ja) * 1989-05-23 1995-10-09 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
KR950006484B1 (ko) 1995-06-15
JP2856853B2 (ja) 1999-02-10
US5105251A (en) 1992-04-14
JPH0463475A (ja) 1992-02-28

Similar Documents

Publication Publication Date Title
KR920003551A (ko) 반도체 장치
CA1175115A (en) Solid state optically coupled electrical power switch
KR910015119A (ko) 스위칭 회로
KR850000800A (ko) 마스터 슬라이스 집적회로 장치
KR850006783A (ko) 스위칭 회로
ATE457527T1 (de) Integrierter leistungs-schaltkreis mit verteiltem gattertreiber
KR900015460A (ko) 반도체 릴레이 회로
KR880012014A (ko) Bimos 논리회로
KR900000945A (ko) 고상 릴레이
DE3576612D1 (de) Halbleiteranordnung mit mos-transistoren.
KR900007114A (ko) 전력용 반도체장치
KR920005297A (ko) 반도체집적회로 장치
KR920017126A (ko) 복수의 인터페이스 레벨을 출력 가능한 반도체 집적 회로장치
KR860009424A (ko) 반도체 집적 회로
KR930003416A (ko) 저용량 2중 확산형 전계효과 트랜지스터
KR970024162A (ko) 풀업 또는 풀다운 저항을 갖는 반도체 장치(a semiconductor device having pull-up or pull-down resistance)
KR930005369A (ko) 레벨변환회로
DE3779579D1 (de) Modul mit halbleiter-leistungsschaltelementen.
KR900013655A (ko) 반도체 회로
KR920001711A (ko) 반도체집적회로
JPS62100017A (ja) 半導体装置
KR870001672A (ko) 반도체 회로장치
DE3581842D1 (de) Integrierte halbleiterschaltung mit komplementaeren feldeffekttransistoren.
KR900019198A (ko) 반도체 집적회로장치
DE69020787D1 (de) Integrierte Halbleiterschaltung mit verbesserter Eingangs-/Ausgangsstruktur.

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20070531

Year of fee payment: 13

LAPS Lapse due to unpaid annual fee