KR900015460A - 반도체 릴레이 회로 - Google Patents

반도체 릴레이 회로 Download PDF

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Publication number
KR900015460A
KR900015460A KR1019900003483A KR900003483A KR900015460A KR 900015460 A KR900015460 A KR 900015460A KR 1019900003483 A KR1019900003483 A KR 1019900003483A KR 900003483 A KR900003483 A KR 900003483A KR 900015460 A KR900015460 A KR 900015460A
Authority
KR
South Korea
Prior art keywords
fet
semiconductor relay
relay circuit
semiconductor
circuit according
Prior art date
Application number
KR1019900003483A
Other languages
English (en)
Other versions
KR930001442B1 (ko
Inventor
유끼오 이다까
슈이찌로오 야마구찌
다께시 마쯔모도
Original Assignee
미요시 도시오
마쓰시다 덴꼬오 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미요시 도시오, 마쓰시다 덴꼬오 가부시끼가이샤 filed Critical 미요시 도시오
Publication of KR900015460A publication Critical patent/KR900015460A/ko
Application granted granted Critical
Publication of KR930001442B1 publication Critical patent/KR930001442B1/ko

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S136/00—Batteries: thermoelectric and photoelectric
    • Y10S136/291—Applications
    • Y10S136/293—Circuits

Abstract

내용 없음.

Description

반도체 릴레이 회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 반도체 릴레이 회로의 제1실시예를 도시한 회로도,
제2도는 제1도 회로에서 저항수단이 정류수단에 대하여 직렬류 접속된 제2실시예를 도시화한 회로도,
제3도는 제2도의 실시예에서 저항수단의 저항치와 반응시간과의 관계를 도시한 도면.

Claims (9)

  1. 광신호를 발생하는 발광 다이오드, 수신된 상기 광신호에 응하여 광기전성 출력을 발생하는 상기 발광 다이오드에 광결합된 다이오드어레이, 상기 다이오드 어레이에 접속되고 게이트와 소오스 양단에 상기 광기전성 출력을 인가하여 제1임피던스 상태에서 제2임피던스 상태로 전환되는 출력FET 상기 출력FET의 게이트와 소오스양단에 접속된 전환되는 제어수단, 상기 출력FET의 드레인과 게이트 양단에 접속된 반도체 수단과 정류수단의 직렬회로로 구성되며, 여기서 상기 반도체 수단은 상기 다이오드 어레이가 상기 광신호를 수신할 때 출력FET의 게이트와 소오스 양단에 축적된 전하의 충전로를 형성하기 위해 저임피던스 상태로 전환되고, 상기 정류수단FET의 드레인과 소오스 양단전압이 제로로 될 때 출력FET의 게이트와 드레인 양단에 광전류의 역류 발생을 차단하는 것을 특징으로 하는 반도체 릴레이 회로.
  2. 제1항에 있어서, 상기 직렬회로 내의 상기 반도체 수단은 포토트랜지스터이며, 직렬회로내의 상기 정류수단은 다이오드로 구성되는 것을 특징으로 하는 반도체 릴레이 회로.
  3. 제2항에 있어서, 상기 동작 제어수단은 디플리션 모드의 제어FET를 포함하는 것을 특징으로 하는 반도체 릴레이 회로.
  4. 제2항에 있어서, 저항은 상기 포토트랜지스터와 상기 직렬회로의 다이오드에 직렬로 접속되어 있는 것을 특징으로 하는 반도체 릴레이 회로.
  5. 제4항에 있어서, 상기 동작제어수단은 디플리션 모드의 제어FET를 포함하는 것을 특징으로 하는 반도체 릴레이회로.
  6. 제1항에 있어서, 상기 직렬회로내의 상기 반도체 수단은 스위칭 트랜지스터이며, 직렬회로의 상기 정류수단은 다이오드인 것을 특징으로 하는 반도체 릴레이 회로.
  7. 제6항에 있어서, 상기 동작제어 수단은 디플리션 모드의 제어FET를 포함하는 것을 특징으로 하는 반도체 릴레이 회로.
  8. 제4항에 있어서, 저항은 상기 스위칭 트랜지스터와 상기 직렬 회로의 다이오드에 직렬로 접속되는 것을 특징으로 하는 반도체 릴레이 회로.
  9. 제8항에 있어서, 상기 동작제어 수단은 디플리션 모드의 제어FET를 포함하는 것을 특징으로 하는 반도체 릴레이 회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900003483A 1989-03-15 1990-03-15 반도체 릴레이 회로 KR930001442B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP6416489 1989-03-15
JP16632589 1989-06-27
JP1-64164 1989-06-27
JP1-166325 1989-06-27

Publications (2)

Publication Number Publication Date
KR900015460A true KR900015460A (ko) 1990-10-27
KR930001442B1 KR930001442B1 (ko) 1993-02-27

Family

ID=26405298

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900003483A KR930001442B1 (ko) 1989-03-15 1990-03-15 반도체 릴레이 회로

Country Status (5)

Country Link
US (1) US5057694A (ko)
KR (1) KR930001442B1 (ko)
DE (1) DE4008376A1 (ko)
FR (1) FR2644652B1 (ko)
GB (1) GB2230395B (ko)

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KR101389413B1 (ko) * 2013-01-22 2014-04-25 한국원자력연구원 고전압 펄스 전원장치

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Also Published As

Publication number Publication date
DE4008376C2 (ko) 1993-08-26
FR2644652B1 (fr) 1992-10-09
GB9004966D0 (en) 1990-05-02
US5057694A (en) 1991-10-15
FR2644652A1 (fr) 1990-09-21
GB2230395A (en) 1990-10-17
KR930001442B1 (ko) 1993-02-27
DE4008376A1 (de) 1990-09-20
GB2230395B (en) 1992-09-30

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