FR2731111B1 - Dispositif de protection d'elements rechargeables et transistor mosfet equipant ce dispositif - Google Patents
Dispositif de protection d'elements rechargeables et transistor mosfet equipant ce dispositifInfo
- Publication number
- FR2731111B1 FR2731111B1 FR9504409A FR9504409A FR2731111B1 FR 2731111 B1 FR2731111 B1 FR 2731111B1 FR 9504409 A FR9504409 A FR 9504409A FR 9504409 A FR9504409 A FR 9504409A FR 2731111 B1 FR2731111 B1 FR 2731111B1
- Authority
- FR
- France
- Prior art keywords
- mosfet transistor
- protection device
- rechargeable elements
- transistor equipped
- rechargeable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0013—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries acting upon several batteries simultaneously or sequentially
- H02J7/0014—Circuits for equalisation of charge between batteries
- H02J7/0016—Circuits for equalisation of charge between batteries using shunting, discharge or bypass circuits
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/007—Regulation of charging or discharging current or voltage
- H02J7/00712—Regulation of charging or discharging current or voltage the cycle being controlled or terminated in response to electric parameters
- H02J7/007182—Regulation of charging or discharging current or voltage the cycle being controlled or terminated in response to electric parameters in response to battery voltage
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
- Protection Of Static Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Secondary Cells (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9504409A FR2731111B1 (fr) | 1995-02-23 | 1995-04-12 | Dispositif de protection d'elements rechargeables et transistor mosfet equipant ce dispositif |
EP96400389A EP0729185B1 (fr) | 1995-02-23 | 1996-02-23 | Améliorations de ou en relation avec des dispositifs de contrôle d'état de charge |
DE69632880T DE69632880T2 (de) | 1995-02-23 | 1996-02-23 | Verbesserungen in oder in Beziehung zu Anordnungen für Ladungskontrollen |
JP8036875A JPH08340112A (ja) | 1995-02-23 | 1996-02-23 | 再充電可能な電池素子の保護装置およびこの装置を備えるmosfetトランジスタ |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9502141A FR2731110B1 (fr) | 1995-02-23 | 1995-02-23 | Dispositif de protection de piles rechargeables et transistor mosfet equipant ce dispositif |
FR9504409A FR2731111B1 (fr) | 1995-02-23 | 1995-04-12 | Dispositif de protection d'elements rechargeables et transistor mosfet equipant ce dispositif |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2731111A1 FR2731111A1 (fr) | 1996-08-30 |
FR2731111B1 true FR2731111B1 (fr) | 1997-05-23 |
Family
ID=26231778
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9504409A Expired - Fee Related FR2731111B1 (fr) | 1995-02-23 | 1995-04-12 | Dispositif de protection d'elements rechargeables et transistor mosfet equipant ce dispositif |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0729185B1 (fr) |
JP (1) | JPH08340112A (fr) |
DE (1) | DE69632880T2 (fr) |
FR (1) | FR2731111B1 (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9605830D0 (en) * | 1996-03-20 | 1996-05-22 | Atomic Energy Authority Uk | Cell overcharge prevention |
GB2313497B (en) * | 1996-03-20 | 2000-05-17 | Aea Technology Plc | Lithium cell recharging |
EP0985242A4 (fr) * | 1998-01-31 | 2007-12-12 | John W Oglesbee | Dispositif de protection contre les surcharges et procede pour batteries rechargeables a base de lithium |
US6331763B1 (en) | 1998-04-15 | 2001-12-18 | Tyco Electronics Corporation | Devices and methods for protection of rechargeable elements |
WO1999056374A1 (fr) * | 1998-04-15 | 1999-11-04 | Tyco Electronics Corporation | Systemes de protection pour elements rechargeables |
US7626360B2 (en) * | 2006-08-11 | 2009-12-01 | Cirrus Logic, Inc. | Charge-pump biased battery protection circuit |
DE112008003629T5 (de) | 2008-01-22 | 2010-11-04 | Hewlett-Packard Development Company, L.P., Houston | Verzögerungsschaltung mit Rücksetzmerkmal |
JP5010657B2 (ja) | 2009-09-18 | 2012-08-29 | 三菱重工業株式会社 | 電池システム |
JP5663783B2 (ja) | 2010-02-26 | 2015-02-04 | リコー電子デバイス株式会社 | 2次電池保護回路とバッテリ装置 |
JP2013123344A (ja) * | 2011-12-12 | 2013-06-20 | Toyota Industries Corp | 電池セル電圧を均等化する装置 |
CN104617626B (zh) * | 2015-02-10 | 2017-05-17 | 申勇兵 | 用于电容降压的充电保护电路 |
CN109088446A (zh) * | 2017-06-14 | 2018-12-25 | 重庆无线绿洲通信技术有限公司 | 供电装置保护电路、车用蓄电池及供电装置保护方法 |
CN107991543B (zh) * | 2017-12-18 | 2024-03-26 | 深圳芯能半导体技术有限公司 | 绝缘栅双极型晶体管的栅极电荷量测量电路及其测量方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5889866A (ja) * | 1981-11-24 | 1983-05-28 | Hitachi Ltd | 絶縁ゲ−ト半導体装置 |
US4709202A (en) * | 1982-06-07 | 1987-11-24 | Norand Corporation | Battery powered system |
US5278487A (en) * | 1988-03-15 | 1994-01-11 | Norand Corporation | Battery conditioning system having communication with battery parameter memory means in conjunction with battery conditioning |
US4777387A (en) * | 1984-02-21 | 1988-10-11 | International Rectifier Corporation | Fast turn-off circuit for photovoltaic driven MOSFET |
JP2856853B2 (ja) * | 1990-07-03 | 1999-02-10 | 株式会社東芝 | 半導体装置 |
US5530336A (en) * | 1992-09-17 | 1996-06-25 | Sony Corporation | Battery protection circuit |
-
1995
- 1995-04-12 FR FR9504409A patent/FR2731111B1/fr not_active Expired - Fee Related
-
1996
- 1996-02-23 EP EP96400389A patent/EP0729185B1/fr not_active Expired - Lifetime
- 1996-02-23 DE DE69632880T patent/DE69632880T2/de not_active Expired - Lifetime
- 1996-02-23 JP JP8036875A patent/JPH08340112A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0729185A3 (fr) | 1996-09-04 |
EP0729185A2 (fr) | 1996-08-28 |
JPH08340112A (ja) | 1996-12-24 |
DE69632880T2 (de) | 2004-12-16 |
EP0729185B1 (fr) | 2004-07-14 |
DE69632880D1 (de) | 2004-08-19 |
FR2731111A1 (fr) | 1996-08-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |