KR920003536A - 고체촬상장치 및 그 제조방법 - Google Patents

고체촬상장치 및 그 제조방법 Download PDF

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Publication number
KR920003536A
KR920003536A KR1019910013088A KR910013088A KR920003536A KR 920003536 A KR920003536 A KR 920003536A KR 1019910013088 A KR1019910013088 A KR 1019910013088A KR 910013088 A KR910013088 A KR 910013088A KR 920003536 A KR920003536 A KR 920003536A
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Prior art keywords
photosensitive
mirror
solid state
film
reflecting
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KR1019910013088A
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KR950001760B1 (ko
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야스오 이이즈카
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아오이 죠이치
가부시키가이샤 도시바
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

내용 없음.

Description

고체촬상장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예에 따른 고체촬상장치의 요부단면도로, 제3도의 A1-A2선에 다른 단면도.
제2도는 그 제조방법의 일예를 나타낸 제조공정단면도.
제3도는 그 요부의 평면패턴도.

Claims (8)

  1. 반도체기판(1)과, 이 반도체기판(1)의 표면부분에 형성된 복수개의 감광부(2), 상기 감광부(2)이외의 부분을 덮는 차광막(4), 상기 감광부(2)의 윗쪽부분에 서로 소정의 간격을 두고 형성되어 입사광을 상기 각 감광부(2)로 집광시키는 복수개의 집광렌즈(10) 및, 상기 집광렌즈(10)간의 비렌즈부분의 아랫쪽부분에 형성되어 적어도 상기 비렌즈부분에 입사된 광을 상기 감광부(2)로 향하게 반사시키는 반사면을 갖춘 미러(13)을 구비한 것을 특징으로 하는 고체촬상장치.
  2. 제1항에 있어서, 상기 미러(13)는 상기 각 감광부(2)에 거의 수직한 축의 주위에 테두리형상으로 형성되어 있고, 그 내측면이 거기에 부딪친 광을 상기 감광부(2)로 향하게 반시키는 미러면(13a∼13d)으로 되어 있는 것을 특징으로 하는 고체촬상장치.
  3. 제1항 또는 제2항에 있어서, 상기 미러(13)는 Aℓ막(21)자체의 에칭에 의해 형성된 것을 특징으로 하는 고체촬상장치.
  4. 제1항 또는 제2항에 있어서, 상기 미러(13)는 절연막(36)을 에칭한 것의 표면에 Aℓ막(39A)을 부가한 것으로 구성되어 있는 것을 특징으로 하는 고체촬상장치.
  5. 제1항 또는 제2항에 있어서, 상기 미러와 차광막이 일체로 형성되어 있는 것을 특징으로 하는 고체촬상장치.
  6. 제1항 또는 제2항에 있어서, 상기 차광막도 적어도 상기 비렌즈부분에 입사된 광을 상기 감광부(2)로 향하게 반사시키는 반사면을 갖춘 것으로 구성되어 있는 것을 특징으로 하는 고체촬상장치.
  7. 표면부분에 복수개의 감광부(2)가 소정의 간격으로 형성된 반도체기판(1)의 표면을 보호막(3)으로 덮는 공정과, 그 보호막(3)상에 Aℓ층(21)을 형성하는 공정, 그 Aℓ층(21)을 패터닝하여 부딪힌 광을 상기 각 감광부(2)로 향하게 반사시키는 미러면(13a∼13d)을 갖춘 미러(13)를 형성하는 공정, 상기 각 감광부(2)윗쪽에 입광을 상기 각 감광부(2)로 집광시키는 집광렌즈(10)를 각각 형성하는 공정을 구비한 것을 특징으로 하는 고체촬상장치의 제조방법.
  8. 표면부분에 복수개의 감광부(33,34)가 소정의 간격으로 형성된 반도체기판(31)의 표면을 절연막(36)으로 덮는 공정과, 그 절연막(36)을 패터닝하여 상기 감광부(33,34)이외의 각 부분의 윗쪽에 부딪친 광을 상기 감광부(33,34)로 향하게 반사시키는 미러의 심지로 되는 잔존절연막(36A)을 형성하는 공정 및, 상기 잔존절연막(36A)의 표면에 Aℓ막(39A)을 덮음으로써 상기 미러를 완성하는 공정을 구비한 것을 특징으로 하는 고체촬상장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910013088A 1990-07-30 1991-07-30 고체촬상장치 및 그 제조방법 KR950001760B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2201681A JPH0485960A (ja) 1990-07-30 1990-07-30 固体撮像装置及びその製造方法
JP02-201681 1990-07-30

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KR920003536A true KR920003536A (ko) 1992-02-29
KR950001760B1 KR950001760B1 (ko) 1995-02-28

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US (1) US5172206A (ko)
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KR (1) KR950001760B1 (ko)

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JPH0485960A (ja) 1992-03-18
US5172206A (en) 1992-12-15
KR950001760B1 (ko) 1995-02-28

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