KR920003105A - 폴리이미드막 패턴을 형성하기 위한 감광성 수지 조성물 및 그 패턴을 구비하여 이루어지는 반도체 장치 - Google Patents
폴리이미드막 패턴을 형성하기 위한 감광성 수지 조성물 및 그 패턴을 구비하여 이루어지는 반도체 장치 Download PDFInfo
- Publication number
- KR920003105A KR920003105A KR1019910011460A KR910011460A KR920003105A KR 920003105 A KR920003105 A KR 920003105A KR 1019910011460 A KR1019910011460 A KR 1019910011460A KR 910011460 A KR910011460 A KR 910011460A KR 920003105 A KR920003105 A KR 920003105A
- Authority
- KR
- South Korea
- Prior art keywords
- substituted
- resin composition
- photosensitive resin
- pattern
- polyimide film
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1057—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain
- C08G73/106—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain containing silicon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/42—Block-or graft-polymers containing polysiloxane sequences
- C08G77/452—Block-or graft-polymers containing polysiloxane sequences containing nitrogen-containing sequences
- C08G77/455—Block-or graft-polymers containing polysiloxane sequences containing nitrogen-containing sequences containing polyamide, polyesteramide or polyimide sequences
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0754—Non-macromolecular compounds containing silicon-to-silicon bonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S522/00—Synthetic resins or natural rubbers -- part of the class 520 series
- Y10S522/904—Monomer or polymer contains initiating group
- Y10S522/905—Benzophenone group
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials For Photolithography (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Formation Of Insulating Films (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (2)
- 일반구조(Ⅰ)로 표시되는 반복단위를 함유하는 폴리아미드산과, 일반식(Ⅱ)으로 표시되는 적어도 한종류의 실릴케톤 화합물을 함유한 것을 특징으로하는 폴리이미드막 패턴을 형성하기 위한 감광성 수지 조성물.단 R1-R16, l, m, n, s, t, u는 각각 다음의 것을 나타낸다.R1: 치환 또는 비치환의또는R2: 2가 유기물R3, R4: 탄소수 1-12의 치환 또는 비치환 알킬기, 또는 탄소수 6-14의 치환 혹은 비치환 방향족기R5-R16의 치환 혹은 비치환 알킬기, 탄소수 6-14의 치환 혹은 비치환 방향족기, 또는 치환 혹은 비치환 실릴기l, m, n, s, t, u : o또는 1이면서 적어도 하나는 1인수
- 제 1 항의 감광성 수지 조성물을 사용하여 형성된 폴리이미드막 패턴을 패시 베이션막 또는 층간 절연막으로서 구비하여 이루어지는 반도체 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17630390 | 1990-07-05 | ||
JP90-176303 | 1990-07-05 | ||
JP1990-176303 | 1990-07-05 | ||
JP90-259033 | 1990-09-28 | ||
JP25903390 | 1990-09-28 | ||
JP1990-259033 | 1990-09-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR920003105A true KR920003105A (ko) | 1992-02-29 |
KR940007803B1 KR940007803B1 (ko) | 1994-08-25 |
Family
ID=26497270
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910011460A KR940007803B1 (ko) | 1990-07-05 | 1991-07-05 | 폴리이미드막 패턴을 형성하기 위한 감광성 수지 조성물 및 그 패턴을 구비하여 이루어지는 반도체 장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5176982A (ko) |
EP (1) | EP0467561B1 (ko) |
KR (1) | KR940007803B1 (ko) |
DE (1) | DE69113900T2 (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5418635A (en) * | 1992-02-19 | 1995-05-23 | Sharp Kabushiki Kaisha | Liquid crystal device with a reflective substrate with bumps of photosensitive resin which have 2 or more heights and random configuration |
JPH0675237A (ja) * | 1992-08-28 | 1994-03-18 | Sharp Corp | 反射型液晶表示装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2967162D1 (en) * | 1978-09-29 | 1984-09-13 | Hitachi Ltd | Light-sensitive polymer composition |
JPS57125212A (en) * | 1981-01-27 | 1982-08-04 | Toshiba Corp | Photo-polymerizable composition |
JPS5857428A (ja) * | 1981-09-30 | 1983-04-05 | Toshiba Corp | 光重合組成物 |
JPS6067531A (ja) * | 1983-09-22 | 1985-04-17 | Toshiba Corp | 樹脂組成物 |
US4698295A (en) * | 1984-11-16 | 1987-10-06 | Ciba-Geigy Corporation | Polyimides, a process for their preparation and their use, and tetracarboxylic acids and tetracarboxylic acid derivatives |
EP0200680A3 (de) * | 1985-04-11 | 1988-10-05 | Ciba-Geigy Ag | Beschichtetes Material und dessen Verwendung |
US4661611A (en) * | 1985-12-06 | 1987-04-28 | Fuji Photo Film Co., Ltd. | Polyfunctional acylsilane crosslinking agents and photocrosslinking systems comprising the same |
DE3701801A1 (de) * | 1986-01-22 | 1987-07-23 | Ricoh Kk | Optisches informationsaufzeichnungsmaterial |
JPH0259752A (ja) * | 1988-08-25 | 1990-02-28 | Toshiba Corp | 感光性組成物 |
-
1991
- 1991-07-03 EP EP91306054A patent/EP0467561B1/en not_active Expired - Lifetime
- 1991-07-03 DE DE69113900T patent/DE69113900T2/de not_active Expired - Lifetime
- 1991-07-05 US US07/726,276 patent/US5176982A/en not_active Expired - Fee Related
- 1991-07-05 KR KR1019910011460A patent/KR940007803B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR940007803B1 (ko) | 1994-08-25 |
EP0467561B1 (en) | 1995-10-18 |
EP0467561A2 (en) | 1992-01-22 |
EP0467561A3 (en) | 1992-09-02 |
DE69113900D1 (de) | 1995-11-23 |
US5176982A (en) | 1993-01-05 |
DE69113900T2 (de) | 1996-03-28 |
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