KR910020848A - 반도체 장비의 촛점심도 점검 레티클 구조 - Google Patents

반도체 장비의 촛점심도 점검 레티클 구조 Download PDF

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Publication number
KR910020848A
KR910020848A KR1019900006527A KR900006527A KR910020848A KR 910020848 A KR910020848 A KR 910020848A KR 1019900006527 A KR1019900006527 A KR 1019900006527A KR 900006527 A KR900006527 A KR 900006527A KR 910020848 A KR910020848 A KR 910020848A
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KR
South Korea
Prior art keywords
reticle
semiconductor equipment
focus depth
reticle structure
depth inspection
Prior art date
Application number
KR1019900006527A
Other languages
English (en)
Other versions
KR920008035B1 (ko
Inventor
백승호
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019900006527A priority Critical patent/KR920008035B1/ko
Publication of KR910020848A publication Critical patent/KR910020848A/ko
Application granted granted Critical
Publication of KR920008035B1 publication Critical patent/KR920008035B1/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

내용 없음

Description

반도체 장비의 촛점심도 점검 레티클 구조
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 평면도, 제2도는 본 발명으로 제1도의 "A"부분 확대도, 제3도는 반도체 장비인 스텝퍼 얼라이너의 작업상태를 나타낸 개략도.

Claims (1)

1/5 축소 스텝퍼 얼라이너 장비의 촛점심도 및 웨이퍼척의 기울기 상태를 점검해주는 레스트 레티클(1)에 있어서, 레스트 레티클(1)내의 해상도 패턴을 크롬면(2)상에 폭이 각각 다른 3단 계단형의 빛통과면(3)을 반복적으로 수평, 평행하게 형성하여서 됨을 특징으로 하는 반도체 장비의 촛점심도 점검 레티클 구조.
※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900006527A 1990-05-09 1990-05-09 반도체 장비의 촛점심도 점검 레티클 구조 KR920008035B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900006527A KR920008035B1 (ko) 1990-05-09 1990-05-09 반도체 장비의 촛점심도 점검 레티클 구조

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900006527A KR920008035B1 (ko) 1990-05-09 1990-05-09 반도체 장비의 촛점심도 점검 레티클 구조

Publications (2)

Publication Number Publication Date
KR910020848A true KR910020848A (ko) 1991-12-20
KR920008035B1 KR920008035B1 (ko) 1992-09-21

Family

ID=19298807

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900006527A KR920008035B1 (ko) 1990-05-09 1990-05-09 반도체 장비의 촛점심도 점검 레티클 구조

Country Status (1)

Country Link
KR (1) KR920008035B1 (ko)

Also Published As

Publication number Publication date
KR920008035B1 (ko) 1992-09-21

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