KR910013442A - 할로겐화합물을 사용하는 구리 식각 프로세스 - Google Patents

할로겐화합물을 사용하는 구리 식각 프로세스 Download PDF

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Publication number
KR910013442A
KR910013442A KR1019900021074A KR900021074A KR910013442A KR 910013442 A KR910013442 A KR 910013442A KR 1019900021074 A KR1019900021074 A KR 1019900021074A KR 900021074 A KR900021074 A KR 900021074A KR 910013442 A KR910013442 A KR 910013442A
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KR
South Korea
Prior art keywords
halogen
copper
substrate
reaction product
copper layer
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Application number
KR1019900021074A
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English (en)
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KR100221992B1 (ko
Inventor
에이. 더글라스 몬트
Original Assignee
엔. 라이스 머레트
텍사스 인스트루먼츠 인코포레이티드
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Application filed by 엔. 라이스 머레트, 텍사스 인스트루먼츠 인코포레이티드 filed Critical 엔. 라이스 머레트
Publication of KR910013442A publication Critical patent/KR910013442A/ko
Application granted granted Critical
Publication of KR100221992B1 publication Critical patent/KR100221992B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • C23F4/02—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00 by evaporation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/067—Etchants

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • ing And Chemical Polishing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

내용 없음.

Description

할로겐화합물을 사용하는 구리 식각 프로세스
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 공정에 사용되는 반응 챔버의 실시예의 개략도.

Claims (6)

  1. 패턴된 도체를 형성하기 위해 밀폐된 챔버내의 기관상에 있는 구리층을 비등방성 식각하기 위한 프로세스에 있어서, 식각되지 않은 상기 구리층의 영역을 마스킹하는 단계, 및 상기 할로겐기가 고강도 자외선에 의해 조사된 후 귀 할로겐 반응 생성물을 형성하기 위해 상기 밀폐된 챔버내의 상기 구리층에 할로겐 기를 유입시키는 단계를 포함하는 것을 특징으로 하는 프로세스.
  2. 제1항에 있어서, 상기 구리 할로겐 반응 생성물이 거의 휘발성이 되는 온도까지 상기기판을 가열하는 단계를 더욱 포함하는 것을 특징으로 하는 프로세스.
  3. 제1항에 있어서, 상기 구리 할로겐 반응 생성물을 제거하기 위해 상기 기판을 세척하는 단계를 더욱 포함하는 것을 특징으로 하는 프로세스.
  4. 제2항에 있어서, 상기 기판이 2000℃이상으로 가열되는 것을 특징으로 하는 프로세스.
  5. 제1항에 있어서, 상기 할로겐기는 염소기인 것을 특징으로 하는 프로세스.
  6. 제1항에 있어서, 상기 고강도 광선이 자외선 광선인 것을 특징으로 하는 프로세스.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900021074A 1989-12-20 1990-12-19 할로겐화합물을 사용하는 구리 식각 프로세스 KR100221992B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US45354989A 1989-12-20 1989-12-20
US453549 1989-12-20

Publications (2)

Publication Number Publication Date
KR910013442A true KR910013442A (ko) 1991-08-08
KR100221992B1 KR100221992B1 (ko) 1999-09-15

Family

ID=23801003

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900021074A KR100221992B1 (ko) 1989-12-20 1990-12-19 할로겐화합물을 사용하는 구리 식각 프로세스

Country Status (5)

Country Link
EP (1) EP0433983B1 (ko)
JP (1) JP3105547B2 (ko)
KR (1) KR100221992B1 (ko)
CN (1) CN1025508C (ko)
DE (1) DE69032089T2 (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MX9305898A (es) * 1992-10-30 1995-01-31 Texas Instruments Inc Metodo de grabado fotoquimico anisotropico para la fabricacion decircuitos integrados.
JPH06326059A (ja) * 1993-05-17 1994-11-25 Fujitsu Ltd 銅薄膜のエッチング方法
JP2793472B2 (ja) * 1993-06-24 1998-09-03 日本電気株式会社 銅微細加工方法および銅微細加工装置
JPH0729908A (ja) * 1993-07-15 1995-01-31 Nec Corp 銅微細配線の形成方法
EP2428516A1 (en) 2003-11-19 2012-03-14 Metabasis Therapeutics, Inc. Novel phosphorus-containing thyromimetics
US8969514B2 (en) 2007-06-04 2015-03-03 Synergy Pharmaceuticals, Inc. Agonists of guanylate cyclase useful for the treatment of hypercholesterolemia, atherosclerosis, coronary heart disease, gallstone, obesity and other cardiovascular diseases
EP2170930B3 (en) 2007-06-04 2013-10-02 Synergy Pharmaceuticals Inc. Agonists of guanylate cyclase useful for the treatment of gastrointestinal disorders, inflammation, cancer and other disorders
JP2011522828A (ja) 2008-06-04 2011-08-04 シナジー ファーマシューティカルズ インコーポレイテッド 胃腸障害、炎症、癌、およびその他の障害の治療のために有用なグアニル酸シクラーゼのアゴニスト
AU2009270833B2 (en) 2008-07-16 2015-02-19 Bausch Health Ireland Limited Agonists of guanylate cyclase useful for the treatment of gastrointestinal, inflammation, cancer and other disorders
WO2010093601A1 (en) 2009-02-10 2010-08-19 Metabasis Therapeutics, Inc. Novel sulfonic acid-containing thyromimetics, and methods for their use
US9616097B2 (en) 2010-09-15 2017-04-11 Synergy Pharmaceuticals, Inc. Formulations of guanylate cyclase C agonists and methods of use
CA2905435A1 (en) 2013-03-15 2014-09-25 Synergy Pharmaceuticals Inc. Compositions useful for the treatment of gastrointestinal disorders
WO2014151206A1 (en) 2013-03-15 2014-09-25 Synergy Pharmaceuticals Inc. Agonists of guanylate cyclase and their uses
EP3004138B1 (en) 2013-06-05 2024-03-13 Bausch Health Ireland Limited Ultra-pure agonists of guanylate cyclase c, method of making and using same
EP3025711B1 (en) 2013-07-23 2020-11-18 Daiichi Sankyo Company, Limited Medicine for preventing or treating hypertension
US9257638B2 (en) * 2014-03-27 2016-02-09 Lam Research Corporation Method to etch non-volatile metal materials
EP3434284A4 (en) 2016-03-24 2019-11-13 Daiichi Sankyo Company, Limited MEDICINE FOR THE TREATMENT OF KIDNEY DISEASE
US10177002B2 (en) * 2016-04-29 2019-01-08 Applied Materials, Inc. Methods for chemical etching of silicon

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6175529A (ja) * 1984-09-21 1986-04-17 Toshiba Corp ドライエツチング方法及び装置
US4622095A (en) * 1985-10-18 1986-11-11 Ibm Corporation Laser stimulated halogen gas etching of metal substrates
JPH01215986A (ja) * 1988-02-24 1989-08-29 Hitachi Ltd ドライエッチング方法

Also Published As

Publication number Publication date
JP3105547B2 (ja) 2000-11-06
EP0433983B1 (en) 1998-03-04
CN1052706A (zh) 1991-07-03
KR100221992B1 (ko) 1999-09-15
EP0433983A2 (en) 1991-06-26
DE69032089T2 (de) 1998-06-25
CN1025508C (zh) 1994-07-20
EP0433983A3 (en) 1993-02-24
JPH04159718A (ja) 1992-06-02
DE69032089D1 (de) 1998-04-09

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