DE69032089D1 - Kupfer-Aetzverfahren mit Hilfe von Haliden - Google Patents

Kupfer-Aetzverfahren mit Hilfe von Haliden

Info

Publication number
DE69032089D1
DE69032089D1 DE69032089T DE69032089T DE69032089D1 DE 69032089 D1 DE69032089 D1 DE 69032089D1 DE 69032089 T DE69032089 T DE 69032089T DE 69032089 T DE69032089 T DE 69032089T DE 69032089 D1 DE69032089 D1 DE 69032089D1
Authority
DE
Germany
Prior art keywords
halides
etching process
copper etching
copper
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69032089T
Other languages
English (en)
Other versions
DE69032089T2 (de
Inventor
Monte A Douglas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE69032089D1 publication Critical patent/DE69032089D1/de
Application granted granted Critical
Publication of DE69032089T2 publication Critical patent/DE69032089T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • C23F4/02Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00 by evaporation
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/067Etchants

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • ing And Chemical Polishing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
DE69032089T 1989-12-20 1990-12-18 Kupfer-Aetzverfahren mit Hilfe von Haliden Expired - Fee Related DE69032089T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US45354989A 1989-12-20 1989-12-20

Publications (2)

Publication Number Publication Date
DE69032089D1 true DE69032089D1 (de) 1998-04-09
DE69032089T2 DE69032089T2 (de) 1998-06-25

Family

ID=23801003

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69032089T Expired - Fee Related DE69032089T2 (de) 1989-12-20 1990-12-18 Kupfer-Aetzverfahren mit Hilfe von Haliden

Country Status (5)

Country Link
EP (1) EP0433983B1 (de)
JP (1) JP3105547B2 (de)
KR (1) KR100221992B1 (de)
CN (1) CN1025508C (de)
DE (1) DE69032089T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MX9305898A (es) * 1992-10-30 1995-01-31 Texas Instruments Inc Metodo de grabado fotoquimico anisotropico para la fabricacion decircuitos integrados.
JPH06326059A (ja) * 1993-05-17 1994-11-25 Fujitsu Ltd 銅薄膜のエッチング方法
JP2793472B2 (ja) * 1993-06-24 1998-09-03 日本電気株式会社 銅微細加工方法および銅微細加工装置
JPH0729908A (ja) * 1993-07-15 1995-01-31 Nec Corp 銅微細配線の形成方法
EP2428516A1 (de) 2003-11-19 2012-03-14 Metabasis Therapeutics, Inc. Neue Phosphor enthaltende Thyromimetika
US8969514B2 (en) 2007-06-04 2015-03-03 Synergy Pharmaceuticals, Inc. Agonists of guanylate cyclase useful for the treatment of hypercholesterolemia, atherosclerosis, coronary heart disease, gallstone, obesity and other cardiovascular diseases
ES2393885T7 (es) 2007-06-04 2014-01-30 Synergy Pharmaceuticals Inc. Agonistas de la guanilato ciclasa útiles para el tratamiento de trastornos gastrointestinales, inflamación, cáncer y otros trastornos
ES2522968T3 (es) 2008-06-04 2014-11-19 Synergy Pharmaceuticals Inc. Agonistas de guanilato ciclasa útiles para el tratamiento de trastornos gastrointestinales, inflamación, cáncer y otros trastornos
AU2009270833B2 (en) 2008-07-16 2015-02-19 Bausch Health Ireland Limited Agonists of guanylate cyclase useful for the treatment of gastrointestinal, inflammation, cancer and other disorders
WO2010093601A1 (en) 2009-02-10 2010-08-19 Metabasis Therapeutics, Inc. Novel sulfonic acid-containing thyromimetics, and methods for their use
US9616097B2 (en) 2010-09-15 2017-04-11 Synergy Pharmaceuticals, Inc. Formulations of guanylate cyclase C agonists and methods of use
CA2905435A1 (en) 2013-03-15 2014-09-25 Synergy Pharmaceuticals Inc. Compositions useful for the treatment of gastrointestinal disorders
JP2016514671A (ja) 2013-03-15 2016-05-23 シナジー ファーマシューティカルズ インコーポレイテッド グアニル酸シクラーゼのアゴニストおよびその使用
US10011637B2 (en) 2013-06-05 2018-07-03 Synergy Pharmaceuticals, Inc. Ultra-pure agonists of guanylate cyclase C, method of making and using same
ES2847904T3 (es) 2013-07-23 2021-08-04 Daiichi Sankyo Co Ltd Medicamento para la prevención o el tratamiento de la hipertensión
US9257638B2 (en) * 2014-03-27 2016-02-09 Lam Research Corporation Method to etch non-volatile metal materials
CA3015964C (en) 2016-03-24 2021-08-03 Daiichi Sankyo Company, Limited Medicine for treating renal disease
US10177002B2 (en) * 2016-04-29 2019-01-08 Applied Materials, Inc. Methods for chemical etching of silicon

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6175529A (ja) * 1984-09-21 1986-04-17 Toshiba Corp ドライエツチング方法及び装置
US4622095A (en) * 1985-10-18 1986-11-11 Ibm Corporation Laser stimulated halogen gas etching of metal substrates
JPH01215986A (ja) * 1988-02-24 1989-08-29 Hitachi Ltd ドライエッチング方法

Also Published As

Publication number Publication date
JPH04159718A (ja) 1992-06-02
EP0433983A3 (en) 1993-02-24
EP0433983A2 (de) 1991-06-26
KR100221992B1 (ko) 1999-09-15
JP3105547B2 (ja) 2000-11-06
CN1052706A (zh) 1991-07-03
DE69032089T2 (de) 1998-06-25
CN1025508C (zh) 1994-07-20
EP0433983B1 (de) 1998-03-04
KR910013442A (ko) 1991-08-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee