KR910010646A - 절연막 형성방법 - Google Patents

절연막 형성방법 Download PDF

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Publication number
KR910010646A
KR910010646A KR1019900018834A KR900018834A KR910010646A KR 910010646 A KR910010646 A KR 910010646A KR 1019900018834 A KR1019900018834 A KR 1019900018834A KR 900018834 A KR900018834 A KR 900018834A KR 910010646 A KR910010646 A KR 910010646A
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South Korea
Prior art keywords
insulating film
forming
substrate
gas atmosphere
nitrogen
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KR1019900018834A
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English (en)
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후구다 히사시
아라가와 도미유기
Original Assignee
고스기 노부미쓰
오끼뎅끼 고오교오 가부시끼가이샤
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Priority claimed from JP4220390A external-priority patent/JPH03244125A/ja
Application filed by 고스기 노부미쓰, 오끼뎅끼 고오교오 가부시끼가이샤 filed Critical 고스기 노부미쓰
Publication of KR910010646A publication Critical patent/KR910010646A/ko

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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
    • H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
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    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
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    • H01L21/02107—Forming insulating materials on a substrate
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  • Formation Of Insulating Films (AREA)

Abstract

내용 없음

Description

절연막 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 절연막형성방법의 설명을 하기위한 도면.
제2도는 본 발명의 실시에 제공하는 절연막 형성 장치의 주요부를 개약적으로 표시하는 단면도.
제3도는 본 발명의 실시에 제공하는 절연막 형성장치의 전체구성을 개략적으로 표시하는 도면.

Claims (4)

  1. 환원성 가스분위기중에서, 실리콘기판을 열처리하고, 그후 반응성 가스분위기중에서, 상기 실리콘기판을 처리하는 것에 의하여, 상기실리콘기판을 청정하는 공정과, 질소를 포함하지 않는 산화성가스분위기중에서 열처리하는것에 의하여 상기 실리콘기판상에 제1의 절연막으로 되는 산화막을 형성하는 공정과, 1산화 2질소분 위기중에서, 열처리하는 것에 의하여, 상기 제1의 절연막상에, 제2의 절연막으로 되는 산화질화막을 형성하는 공정과, 를 이루어지는 것을 특징으로 하는 절연막 형성방법.
  2. 반응로내에서 기판에 대하여 절연막 형성가스분위기중에서의 가열처리를 행하여 해당기판에 절연막을 형성하는데에 있어서, 절연막 형성가스를 질소비함유의 제1의 산화성가스로서 제1의 절연막을 형성하고, 이어서 상기 절연막 형성가스를 질소함유의 제2의 산화성가스에 대신하여 상기 제1의 절연막상에 제2의 절연막을 형성하는 공정을 적어도 1회포함하는 것과, 를 특징으로 하는 절연막 형성방법.
  3. 제2항에 있어서, 제1의 절연막 형성전에 상기기판에 대하여 환원성 가스분위기중에서의 가열처리를 행하는 것을 특징으로하는 절연막 형성방법.
  4. 제2항에 있어서, 상기 가열처리를 적외선조사에 의하여 행하는 것을 특징으로하는 절연막 형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900018834A 1989-11-20 1990-11-20 절연막 형성방법 KR910010646A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1-299546 1989-11-20
JP1299546A JPH03160720A (ja) 1989-11-20 1989-11-20 絶縁膜形成方法
JP2-042203 1990-02-20
JP4220390A JPH03244125A (ja) 1990-02-22 1990-02-22 絶縁膜形成方法

Publications (1)

Publication Number Publication Date
KR910010646A true KR910010646A (ko) 1991-06-29

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Application Number Title Priority Date Filing Date
KR1019900018834A KR910010646A (ko) 1989-11-20 1990-11-20 절연막 형성방법

Country Status (3)

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EP (1) EP0430030A3 (ko)
JP (1) JPH03160720A (ko)
KR (1) KR910010646A (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100348343B1 (ko) * 1994-08-11 2002-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 실리콘 산화막 열처리 방법 및 장치
KR100342976B1 (ko) * 1998-12-29 2002-09-18 주식회사 하이닉스반도체 반도체소자의금속배선및그형성방법

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2793416B2 (ja) * 1992-03-06 1998-09-03 沖電気工業株式会社 絶縁膜形成方法
JPH05304146A (ja) * 1992-04-28 1993-11-16 Oki Electric Ind Co Ltd 絶縁膜形成方法
JP3310386B2 (ja) * 1993-05-25 2002-08-05 忠弘 大見 絶縁酸化膜の形成方法及び半導体装置
DE69421465T2 (de) * 1993-07-30 2000-02-10 Applied Materials Inc Verfahren zur Ablagerung von Silzium-Nitrid auf Siliziumoberflächen
JP3105770B2 (ja) * 1995-09-29 2000-11-06 日本電気株式会社 半導体装置の製造方法
FR2783530B1 (fr) 1998-09-21 2001-08-31 Commissariat Energie Atomique Procede de preparation, par nitruration, d'un substrat de silicium pour la formation d'une couche isolante mince
KR100682190B1 (ko) 1999-09-07 2007-02-12 동경 엘렉트론 주식회사 실리콘 산질화물을 포함하는 절연막의 형성 방법 및 장치
US6494959B1 (en) 2000-01-28 2002-12-17 Applied Materials, Inc. Process and apparatus for cleaning a silicon surface
JP2007201507A (ja) * 2007-05-01 2007-08-09 Tokyo Electron Ltd 基板処理方法および基板処理装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0154670B1 (en) * 1978-06-14 1991-05-08 Fujitsu Limited Process for producing a semiconductor device having insulating film
JPH01134932A (ja) * 1987-11-19 1989-05-26 Oki Electric Ind Co Ltd 基板清浄化方法及び基板清浄化装置
JPH01207930A (ja) * 1988-02-16 1989-08-21 Oki Electric Ind Co Ltd 表面改質法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100348343B1 (ko) * 1994-08-11 2002-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 실리콘 산화막 열처리 방법 및 장치
KR100313385B1 (ko) * 1994-08-11 2003-08-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 실리콘산화막열처리방법및장치
US6635589B2 (en) 1994-08-11 2003-10-21 Semiconductor Energy Laboratory Co., Ltd. Methods of heat treatment and heat treatment apparatus for silicon oxide films
KR100342976B1 (ko) * 1998-12-29 2002-09-18 주식회사 하이닉스반도체 반도체소자의금속배선및그형성방법

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Publication number Publication date
EP0430030A2 (en) 1991-06-05
JPH03160720A (ja) 1991-07-10
EP0430030A3 (en) 1991-09-04

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