FR2783530B1 - Procede de preparation, par nitruration, d'un substrat de silicium pour la formation d'une couche isolante mince - Google Patents

Procede de preparation, par nitruration, d'un substrat de silicium pour la formation d'une couche isolante mince

Info

Publication number
FR2783530B1
FR2783530B1 FR9811746A FR9811746A FR2783530B1 FR 2783530 B1 FR2783530 B1 FR 2783530B1 FR 9811746 A FR9811746 A FR 9811746A FR 9811746 A FR9811746 A FR 9811746A FR 2783530 B1 FR2783530 B1 FR 2783530B1
Authority
FR
France
Prior art keywords
nitruration
formation
preparation
silicon substrate
insulation layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9811746A
Other languages
English (en)
Other versions
FR2783530A1 (fr
Inventor
Francois Martin
Daniel Bensahel
Caroline Hernandez
Laurent Vallier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR9811746A priority Critical patent/FR2783530B1/fr
Priority to PCT/FR1999/002228 priority patent/WO2000017412A1/fr
Priority to DE69904069T priority patent/DE69904069T2/de
Priority to US09/763,532 priority patent/US6551698B1/en
Priority to EP99943005A priority patent/EP1115895B1/fr
Publication of FR2783530A1 publication Critical patent/FR2783530A1/fr
Application granted granted Critical
Publication of FR2783530B1 publication Critical patent/FR2783530B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C23C28/044—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material coatings specially adapted for cutting tools or wear applications
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/28—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases more than one element being applied in one step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
FR9811746A 1998-09-21 1998-09-21 Procede de preparation, par nitruration, d'un substrat de silicium pour la formation d'une couche isolante mince Expired - Fee Related FR2783530B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR9811746A FR2783530B1 (fr) 1998-09-21 1998-09-21 Procede de preparation, par nitruration, d'un substrat de silicium pour la formation d'une couche isolante mince
PCT/FR1999/002228 WO2000017412A1 (fr) 1998-09-21 1999-09-20 Procede de traitement, par nitruration, d'un substrat de silicium pour la formation d'une couche isolante mince
DE69904069T DE69904069T2 (de) 1998-09-21 1999-09-20 Verfahren zum nitrieren eines silizium-substrates zur erzeugung einer isolationsbeschichtung
US09/763,532 US6551698B1 (en) 1998-09-21 1999-09-20 Method for treating a silicon substrate, by nitriding, to form a thin insulating layer
EP99943005A EP1115895B1 (fr) 1998-09-21 1999-09-20 Procede de traitement, par nitruration, d'un substrat de silicium pour la formation d'une couche isolante mince

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9811746A FR2783530B1 (fr) 1998-09-21 1998-09-21 Procede de preparation, par nitruration, d'un substrat de silicium pour la formation d'une couche isolante mince

Publications (2)

Publication Number Publication Date
FR2783530A1 FR2783530A1 (fr) 2000-03-24
FR2783530B1 true FR2783530B1 (fr) 2001-08-31

Family

ID=9530648

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9811746A Expired - Fee Related FR2783530B1 (fr) 1998-09-21 1998-09-21 Procede de preparation, par nitruration, d'un substrat de silicium pour la formation d'une couche isolante mince

Country Status (5)

Country Link
US (1) US6551698B1 (fr)
EP (1) EP1115895B1 (fr)
DE (1) DE69904069T2 (fr)
FR (1) FR2783530B1 (fr)
WO (1) WO2000017412A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BRPI0708360A2 (pt) * 2006-02-28 2011-05-24 Evonik Degussa Corp substrato revestido para desempenho de impressão aperfeiçoado e processo de fabricação do mesmo
CN101512070A (zh) * 2006-09-26 2009-08-19 赢创德固赛公司 具有增强的印刷性能的多功能纸

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4438157A (en) * 1980-12-05 1984-03-20 Ncr Corporation Process for forming MNOS dual dielectric structure
CA1317034C (fr) * 1988-09-30 1993-04-27 Alliedsignal Inc. Fabrication de microstructures d'oxynitride
JPH03160720A (ja) * 1989-11-20 1991-07-10 Oki Electric Ind Co Ltd 絶縁膜形成方法
KR930002661B1 (ko) * 1990-05-10 1993-04-07 금성일렉트론 주식회사 수직 lpcvd법을 이용한 질산화막 실리콘 제조장치 및 방법
US5407870A (en) * 1993-06-07 1995-04-18 Motorola Inc. Process for fabricating a semiconductor device having a high reliability dielectric material
KR970009863B1 (ko) * 1994-01-22 1997-06-18 금성일렉트론 주식회사 반도체 소자의 실리콘절연막형성방법
US5674788A (en) * 1995-06-06 1997-10-07 Advanced Micro Devices, Inc. Method of forming high pressure silicon oxynitride gate dielectrics
US5861190A (en) * 1996-03-25 1999-01-19 Hewlett-Packard Co. Arrangement for growing a thin dielectric layer on a semiconductor wafer at low temperatures
CA2213034C (fr) * 1996-09-02 2002-12-17 Murata Manufacturing Co., Ltd. Dispositif semiconducteur comportant un film de passivation
AU5429998A (en) * 1996-12-03 1998-07-15 Scott Specialty Gases, Inc. Process for forming ultrathin oxynitride layers and thin layer devices containing ultrathin oxynitride layers
US5843817A (en) * 1997-09-19 1998-12-01 Taiwan Semiconductor Manufacturing Company, Ltd. Process for integrating stacked capacitor DRAM devices with MOSFET devices used for high performance logic circuits
FR2775120B1 (fr) 1998-02-18 2000-04-07 France Telecom Procede de nitruration de la couche d'oxyde de grille d'un dispositif semiconducteur et dispositif obtenu

Also Published As

Publication number Publication date
FR2783530A1 (fr) 2000-03-24
EP1115895B1 (fr) 2002-11-20
WO2000017412A1 (fr) 2000-03-30
US6551698B1 (en) 2003-04-22
DE69904069T2 (de) 2003-07-17
EP1115895A1 (fr) 2001-07-18
DE69904069D1 (de) 2003-01-02

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20130531