DE69904069D1 - Verfahren zum nitrieren eines silizium-substrates zur erzeugung einer isolationsbeschichtung - Google Patents

Verfahren zum nitrieren eines silizium-substrates zur erzeugung einer isolationsbeschichtung

Info

Publication number
DE69904069D1
DE69904069D1 DE69904069T DE69904069T DE69904069D1 DE 69904069 D1 DE69904069 D1 DE 69904069D1 DE 69904069 T DE69904069 T DE 69904069T DE 69904069 T DE69904069 T DE 69904069T DE 69904069 D1 DE69904069 D1 DE 69904069D1
Authority
DE
Germany
Prior art keywords
nitrating
producing
silicon substrate
insulation coating
insulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69904069T
Other languages
English (en)
Other versions
DE69904069T2 (de
Inventor
Francois Martin
Daniel Bensahel
Caroline Hernandez
Laurent Vallier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Orange SA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
France Telecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, France Telecom SA filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE69904069D1 publication Critical patent/DE69904069D1/de
Application granted granted Critical
Publication of DE69904069T2 publication Critical patent/DE69904069T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C23C28/044—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material coatings specially adapted for cutting tools or wear applications
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/28—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases more than one element being applied in one step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE69904069T 1998-09-21 1999-09-20 Verfahren zum nitrieren eines silizium-substrates zur erzeugung einer isolationsbeschichtung Expired - Lifetime DE69904069T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9811746A FR2783530B1 (fr) 1998-09-21 1998-09-21 Procede de preparation, par nitruration, d'un substrat de silicium pour la formation d'une couche isolante mince
PCT/FR1999/002228 WO2000017412A1 (fr) 1998-09-21 1999-09-20 Procede de traitement, par nitruration, d'un substrat de silicium pour la formation d'une couche isolante mince

Publications (2)

Publication Number Publication Date
DE69904069D1 true DE69904069D1 (de) 2003-01-02
DE69904069T2 DE69904069T2 (de) 2003-07-17

Family

ID=9530648

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69904069T Expired - Lifetime DE69904069T2 (de) 1998-09-21 1999-09-20 Verfahren zum nitrieren eines silizium-substrates zur erzeugung einer isolationsbeschichtung

Country Status (5)

Country Link
US (1) US6551698B1 (de)
EP (1) EP1115895B1 (de)
DE (1) DE69904069T2 (de)
FR (1) FR2783530B1 (de)
WO (1) WO2000017412A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8114486B2 (en) * 2006-02-28 2012-02-14 Evonik Degussa Corporation Colored paper and substrates coated for enhanced printing performance
WO2008039562A1 (en) * 2006-09-26 2008-04-03 Evonik Degussa Corporation Multi-functional paper for enhanced printing performance

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4438157A (en) * 1980-12-05 1984-03-20 Ncr Corporation Process for forming MNOS dual dielectric structure
CA1317034C (en) * 1988-09-30 1993-04-27 Alliedsignal Inc. Fabrication of oxynitride frontside microstructures
JPH03160720A (ja) * 1989-11-20 1991-07-10 Oki Electric Ind Co Ltd 絶縁膜形成方法
KR930002661B1 (ko) * 1990-05-10 1993-04-07 금성일렉트론 주식회사 수직 lpcvd법을 이용한 질산화막 실리콘 제조장치 및 방법
US5407870A (en) * 1993-06-07 1995-04-18 Motorola Inc. Process for fabricating a semiconductor device having a high reliability dielectric material
KR970009863B1 (ko) * 1994-01-22 1997-06-18 금성일렉트론 주식회사 반도체 소자의 실리콘절연막형성방법
US5674788A (en) * 1995-06-06 1997-10-07 Advanced Micro Devices, Inc. Method of forming high pressure silicon oxynitride gate dielectrics
US5861190A (en) * 1996-03-25 1999-01-19 Hewlett-Packard Co. Arrangement for growing a thin dielectric layer on a semiconductor wafer at low temperatures
CA2213034C (en) * 1996-09-02 2002-12-17 Murata Manufacturing Co., Ltd. A semiconductor device with a passivation film
WO1998027580A1 (en) * 1996-12-03 1998-06-25 Scott Specialty Gases, Inc. Process for forming ultrathin oxynitride layers and thin layer devices containing ultrathin oxynitride layers
US5843817A (en) * 1997-09-19 1998-12-01 Taiwan Semiconductor Manufacturing Company, Ltd. Process for integrating stacked capacitor DRAM devices with MOSFET devices used for high performance logic circuits
FR2775120B1 (fr) 1998-02-18 2000-04-07 France Telecom Procede de nitruration de la couche d'oxyde de grille d'un dispositif semiconducteur et dispositif obtenu

Also Published As

Publication number Publication date
EP1115895B1 (de) 2002-11-20
US6551698B1 (en) 2003-04-22
EP1115895A1 (de) 2001-07-18
WO2000017412A1 (fr) 2000-03-30
DE69904069T2 (de) 2003-07-17
FR2783530B1 (fr) 2001-08-31
FR2783530A1 (fr) 2000-03-24

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Legal Events

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8364 No opposition during term of opposition