CA1317034C - Fabrication de microstructures d'oxynitride - Google Patents
Fabrication de microstructures d'oxynitrideInfo
- Publication number
- CA1317034C CA1317034C CA000608728A CA608728A CA1317034C CA 1317034 C CA1317034 C CA 1317034C CA 000608728 A CA000608728 A CA 000608728A CA 608728 A CA608728 A CA 608728A CA 1317034 C CA1317034 C CA 1317034C
- Authority
- CA
- Canada
- Prior art keywords
- oxynitride
- spacer layer
- layer
- microstructure
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US25280188A | 1988-09-30 | 1988-09-30 | |
US252.801 | 1988-09-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1317034C true CA1317034C (fr) | 1993-04-27 |
Family
ID=22957614
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA000608728A Expired - Fee Related CA1317034C (fr) | 1988-09-30 | 1989-08-18 | Fabrication de microstructures d'oxynitride |
Country Status (2)
Country | Link |
---|---|
CA (1) | CA1317034C (fr) |
WO (1) | WO1990003560A2 (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU631734B2 (en) * | 1990-04-18 | 1992-12-03 | Terumo Kabushiki Kaisha | Infrared ray sensor and method of manufacturing the same |
US5397720A (en) * | 1994-01-07 | 1995-03-14 | The Regents Of The University Of Texas System | Method of making MOS transistor having improved oxynitride dielectric |
US5478765A (en) * | 1994-05-04 | 1995-12-26 | Regents Of The University Of Texas System | Method of making an ultra thin dielectric for electronic devices |
DE19735379B4 (de) | 1997-08-14 | 2008-06-05 | Perkinelmer Optoelectronics Gmbh | Sensorsystem und Herstellungsverfahren |
DE19758939B4 (de) * | 1997-08-14 | 2014-07-03 | Excelitas Technologies Singapore Pte Ltd | Verfahren zur Herstellung eines Substrats, Sensorsystem |
FR2783530B1 (fr) | 1998-09-21 | 2001-08-31 | Commissariat Energie Atomique | Procede de preparation, par nitruration, d'un substrat de silicium pour la formation d'une couche isolante mince |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3679663D1 (de) * | 1986-01-07 | 1991-07-11 | Emi Plc Thorn | Druckempfindlicher durchflusssensor. |
-
1989
- 1989-08-18 CA CA000608728A patent/CA1317034C/fr not_active Expired - Fee Related
- 1989-09-18 WO PCT/EP1989/001082 patent/WO1990003560A2/fr unknown
Also Published As
Publication number | Publication date |
---|---|
WO1990003560A3 (fr) | 1990-05-17 |
WO1990003560A2 (fr) | 1990-04-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MKLA | Lapsed |