CA1317034C - Fabrication de microstructures d'oxynitride - Google Patents

Fabrication de microstructures d'oxynitride

Info

Publication number
CA1317034C
CA1317034C CA000608728A CA608728A CA1317034C CA 1317034 C CA1317034 C CA 1317034C CA 000608728 A CA000608728 A CA 000608728A CA 608728 A CA608728 A CA 608728A CA 1317034 C CA1317034 C CA 1317034C
Authority
CA
Canada
Prior art keywords
oxynitride
spacer layer
layer
microstructure
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA000608728A
Other languages
English (en)
Inventor
George Edward Gimpelson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Automotive LP
Original Assignee
Siemens Bendix Automotive Electronics LP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Bendix Automotive Electronics LP filed Critical Siemens Bendix Automotive Electronics LP
Application granted granted Critical
Publication of CA1317034C publication Critical patent/CA1317034C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Formation Of Insulating Films (AREA)
CA000608728A 1988-09-30 1989-08-18 Fabrication de microstructures d'oxynitride Expired - Fee Related CA1317034C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US25280188A 1988-09-30 1988-09-30
US252.801 1988-09-30

Publications (1)

Publication Number Publication Date
CA1317034C true CA1317034C (fr) 1993-04-27

Family

ID=22957614

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000608728A Expired - Fee Related CA1317034C (fr) 1988-09-30 1989-08-18 Fabrication de microstructures d'oxynitride

Country Status (2)

Country Link
CA (1) CA1317034C (fr)
WO (1) WO1990003560A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU631734B2 (en) * 1990-04-18 1992-12-03 Terumo Kabushiki Kaisha Infrared ray sensor and method of manufacturing the same
US5397720A (en) * 1994-01-07 1995-03-14 The Regents Of The University Of Texas System Method of making MOS transistor having improved oxynitride dielectric
US5478765A (en) * 1994-05-04 1995-12-26 Regents Of The University Of Texas System Method of making an ultra thin dielectric for electronic devices
DE19735379B4 (de) 1997-08-14 2008-06-05 Perkinelmer Optoelectronics Gmbh Sensorsystem und Herstellungsverfahren
DE19758939B4 (de) * 1997-08-14 2014-07-03 Excelitas Technologies Singapore Pte Ltd Verfahren zur Herstellung eines Substrats, Sensorsystem
FR2783530B1 (fr) 1998-09-21 2001-08-31 Commissariat Energie Atomique Procede de preparation, par nitruration, d'un substrat de silicium pour la formation d'une couche isolante mince

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3679663D1 (de) * 1986-01-07 1991-07-11 Emi Plc Thorn Druckempfindlicher durchflusssensor.

Also Published As

Publication number Publication date
WO1990003560A3 (fr) 1990-05-17
WO1990003560A2 (fr) 1990-04-05

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