WO1990003560A3 - Fabrication de microstructures a face frontale en oxynitrure - Google Patents

Fabrication de microstructures a face frontale en oxynitrure Download PDF

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Publication number
WO1990003560A3
WO1990003560A3 PCT/EP1989/001082 EP8901082W WO9003560A3 WO 1990003560 A3 WO1990003560 A3 WO 1990003560A3 EP 8901082 W EP8901082 W EP 8901082W WO 9003560 A3 WO9003560 A3 WO 9003560A3
Authority
WO
WIPO (PCT)
Prior art keywords
oxynitride
frontside
microstructures
fabrication
microstructure
Prior art date
Application number
PCT/EP1989/001082
Other languages
English (en)
Other versions
WO1990003560A2 (fr
Inventor
Georg Edward Gimpelson
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of WO1990003560A2 publication Critical patent/WO1990003560A2/fr
Publication of WO1990003560A3 publication Critical patent/WO1990003560A3/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms

Abstract

Le procédé décrit sert à produire une microstructure en oxynitrure à faible contrainte sur un substrat semiconducteur à des températures ne dépassant pas 500°C. Ledit procédé est particulièrement adapté pour fabriquer des capteurs en silicium intégrés, dans lesquels la microstrucutre en oxynitrure est formée sur un substrat dans des conditions n'affectant pas les éléments électroniques du circuit intégré.
PCT/EP1989/001082 1988-09-30 1989-09-18 Fabrication de microstructures a face frontale en oxynitrure WO1990003560A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US25280188A 1988-09-30 1988-09-30
US252,801 1988-09-30

Publications (2)

Publication Number Publication Date
WO1990003560A2 WO1990003560A2 (fr) 1990-04-05
WO1990003560A3 true WO1990003560A3 (fr) 1990-05-17

Family

ID=22957614

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP1989/001082 WO1990003560A2 (fr) 1988-09-30 1989-09-18 Fabrication de microstructures a face frontale en oxynitrure

Country Status (2)

Country Link
CA (1) CA1317034C (fr)
WO (1) WO1990003560A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU631734B2 (en) * 1990-04-18 1992-12-03 Terumo Kabushiki Kaisha Infrared ray sensor and method of manufacturing the same
US5397720A (en) * 1994-01-07 1995-03-14 The Regents Of The University Of Texas System Method of making MOS transistor having improved oxynitride dielectric
US5478765A (en) * 1994-05-04 1995-12-26 Regents Of The University Of Texas System Method of making an ultra thin dielectric for electronic devices
DE19758939B4 (de) * 1997-08-14 2014-07-03 Excelitas Technologies Singapore Pte Ltd Verfahren zur Herstellung eines Substrats, Sensorsystem
DE19735379B4 (de) 1997-08-14 2008-06-05 Perkinelmer Optoelectronics Gmbh Sensorsystem und Herstellungsverfahren
FR2783530B1 (fr) 1998-09-21 2001-08-31 Commissariat Energie Atomique Procede de preparation, par nitruration, d'un substrat de silicium pour la formation d'une couche isolante mince

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0239703A1 (fr) * 1986-01-07 1987-10-07 THORN EMI plc Capteur de débit sensible à la pression

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0239703A1 (fr) * 1986-01-07 1987-10-07 THORN EMI plc Capteur de débit sensible à la pression

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Journal of the Electrochemical Society: Solid-State Science and Technology, Vol. 133, No. 7, July 1986, (Manchester, NY, US), W.A.P. CLAASSEN et al.: "Characterization of Silicon-Oxynitride Films Deposited by Plasma-Enhanced CVD", pages 1458-1464 *
Journal of the Electrochemical Society: Solid-State Science and Technology, Vol. 135, No. 5, May 1988, (Manchester, NH, US), W.R. KNOLLE et al.: "Characterization of Oxygen-Doped, Plasma-Deposited Silicon Nitride", pages 1211-1217 *
Plasma Chemistry & Plasma Processing, Vol. 7, No. 1, March 1987, Plenum Publishing Corporation, (Bristol, GB), W.A.P. CLAASSEN: "Ion Bombardment-Induced Mechanical Stress in Plasma-enhanced Deposited Silicon Nitride and Silicon Oxynitride Films", pages 109-124 *

Also Published As

Publication number Publication date
CA1317034C (fr) 1993-04-27
WO1990003560A2 (fr) 1990-04-05

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