FR2577714B1 - Procede pour la formation de structures submicroniques a haute resolution sur une surface de substrat - Google Patents

Procede pour la formation de structures submicroniques a haute resolution sur une surface de substrat

Info

Publication number
FR2577714B1
FR2577714B1 FR858515024A FR8515024A FR2577714B1 FR 2577714 B1 FR2577714 B1 FR 2577714B1 FR 858515024 A FR858515024 A FR 858515024A FR 8515024 A FR8515024 A FR 8515024A FR 2577714 B1 FR2577714 B1 FR 2577714B1
Authority
FR
France
Prior art keywords
submicronic
structures
substrate surface
high resolution
forming high
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR858515024A
Other languages
English (en)
Other versions
FR2577714A1 (fr
Inventor
John Roland Pitts
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Department of Energy
Original Assignee
US Department of Energy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Department of Energy filed Critical US Department of Energy
Publication of FR2577714A1 publication Critical patent/FR2577714A1/fr
Application granted granted Critical
Publication of FR2577714B1 publication Critical patent/FR2577714B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/10—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using electron beam; Record carriers therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/949—Energy beam treating radiation resist on semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Toxicology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electron Beam Exposure (AREA)
  • Formation Of Insulating Films (AREA)
FR858515024A 1984-10-10 1985-10-10 Procede pour la formation de structures submicroniques a haute resolution sur une surface de substrat Expired - Fee Related FR2577714B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/659,490 US4566937A (en) 1984-10-10 1984-10-10 Electron beam enhanced surface modification for making highly resolved structures

Publications (2)

Publication Number Publication Date
FR2577714A1 FR2577714A1 (fr) 1986-08-22
FR2577714B1 true FR2577714B1 (fr) 1990-10-05

Family

ID=24645620

Family Applications (1)

Application Number Title Priority Date Filing Date
FR858515024A Expired - Fee Related FR2577714B1 (fr) 1984-10-10 1985-10-10 Procede pour la formation de structures submicroniques a haute resolution sur une surface de substrat

Country Status (7)

Country Link
US (1) US4566937A (fr)
JP (1) JPS61154031A (fr)
CA (1) CA1226376A (fr)
DE (1) DE3535890A1 (fr)
FR (1) FR2577714B1 (fr)
GB (1) GB2165494B (fr)
IT (1) IT1186005B (fr)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0642456B2 (ja) * 1984-11-21 1994-06-01 株式会社日立製作所 表面光処理方法
GB2172427A (en) * 1985-03-13 1986-09-17 Philips Electronic Associated Semiconductor device manufacture using a deflected ion beam
JPS6318541A (ja) * 1986-07-11 1988-01-26 Hitachi Ltd 電子線記録再生方法及びその装置
US4961178A (en) * 1986-10-21 1990-10-02 Matsushita Electric Industrial Co., Ltd. Method of erasable recording and reading of information
US4834834A (en) * 1987-11-20 1989-05-30 Massachusetts Institute Of Technology Laser photochemical etching using surface halogenation
US5171718A (en) * 1987-11-27 1992-12-15 Sony Corporation Method for forming a fine pattern by using a patterned resist layer
KR890008933A (ko) * 1987-11-27 1989-07-13 오가 노리오 반도체 집적회로소자의 패턴의 레지스트층의 사용에 의한 정밀패턴 형성방법
JP2920922B2 (ja) * 1988-10-21 1999-07-19 ソニー株式会社 パターン形成方法
EP0361460A3 (fr) * 1988-09-29 1990-08-01 Sony Corporation Méthode pour la fabrication d'un motif
US4983250A (en) * 1989-06-16 1991-01-08 Microelectronics And Computer Technology Method of laser patterning an electrical interconnect
GB2247345B (en) * 1990-07-05 1995-04-05 Haroon Ahmed Integrated circuit structure analysis
US5244538A (en) * 1991-07-26 1993-09-14 Microelectronics And Computer Technology Corporation Method of patterning metal on a substrate using direct-write deposition of a mask
US5312514A (en) * 1991-11-07 1994-05-17 Microelectronics And Computer Technology Corporation Method of making a field emitter device using randomly located nuclei as an etch mask
US5382315A (en) * 1991-02-11 1995-01-17 Microelectronics And Computer Technology Corporation Method of forming etch mask using particle beam deposition
DE69227137T2 (de) * 1991-02-28 1999-04-22 Texas Instruments Inc Verfahren zur Herstellung einer Markierung
US5399238A (en) * 1991-11-07 1995-03-21 Microelectronics And Computer Technology Corporation Method of making field emission tips using physical vapor deposition of random nuclei as etch mask
JP2771472B2 (ja) * 1994-05-16 1998-07-02 松下電器産業株式会社 半導体装置の製造方法
US6652922B1 (en) * 1995-06-15 2003-11-25 Alliedsignal Inc. Electron-beam processed films for microelectronics structures
US6878417B2 (en) * 1997-11-12 2005-04-12 John C. Polanyi Method of molecular-scale pattern imprinting at surfaces
TW473834B (en) 1998-05-01 2002-01-21 Ibm Method of doping a gate and creating a very shallow source/drain extension and resulting semiconductor
US6300622B1 (en) 1999-01-27 2001-10-09 Gtp, Inc. Method and device for charged particle ray information storage
US6434678B1 (en) 1999-02-12 2002-08-13 Gtp, Inc. Method for data storage organization
US6251755B1 (en) 1999-04-22 2001-06-26 International Business Machines Corporation High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe
US6730370B1 (en) 2000-09-26 2004-05-04 Sveinn Olafsson Method and apparatus for processing materials by applying a controlled succession of thermal spikes or shockwaves through a growth medium
DE10353591A1 (de) * 2003-11-17 2005-06-02 Infineon Technologies Ag Verfahren zum lokal begrenzten Ätzen einer Chromschicht
US7633033B2 (en) * 2004-01-09 2009-12-15 General Lasertronics Corporation Color sensing for laser decoating
US7800014B2 (en) * 2004-01-09 2010-09-21 General Lasertronics Corporation Color sensing for laser decoating
US20060196853A1 (en) * 2005-03-04 2006-09-07 The Regents Of The University Of California Micro-joining using electron beams
DE102006046503A1 (de) * 2006-08-18 2008-02-21 Mg-Micro Galva Gmbh Laseroxidieren von Magnesium-, Titan- oder Aluminiumwerkstoffen
WO2008118365A1 (fr) 2007-03-22 2008-10-02 General Lasertronics Corporation Procédés de décapage et de modification de surfaces par ablation induite par laser
WO2009005840A1 (fr) * 2007-07-05 2009-01-08 General Lasertronics Corporation Adaptateurs d'ouverture destinés à un organe terminal effecteur pour l'élimination de revêtement à base de laser
US10112257B1 (en) 2010-07-09 2018-10-30 General Lasertronics Corporation Coating ablating apparatus with coating removal detection
US9895771B2 (en) 2012-02-28 2018-02-20 General Lasertronics Corporation Laser ablation for the environmentally beneficial removal of surface coatings
US10086597B2 (en) 2014-01-21 2018-10-02 General Lasertronics Corporation Laser film debonding method
RU2706265C1 (ru) * 2019-04-02 2019-11-15 Российская Федерация, от имени которой выступает ФОНД ПЕРСПЕКТИВНЫХ ИССЛЕДОВАНИЙ Способ изготовления массивов регулярных субмикронных металлических структур на оптически прозрачных подложках

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3814975A (en) * 1969-08-06 1974-06-04 Gen Electric Electron emission system
CH631743A5 (de) * 1977-06-01 1982-08-31 Balzers Hochvakuum Verfahren zum aufdampfen von material in einer vakuumaufdampfanlage.
US4212082A (en) * 1978-04-21 1980-07-08 General Electric Company Method for fabrication of improved storage target and target produced thereby
US4213192A (en) * 1979-01-15 1980-07-15 Christensen Alton O Sr Electron beam accessed read-write-erase random access memory
US4377437A (en) * 1981-05-22 1983-03-22 Bell Telephone Laboratories, Incorporated Device lithography by selective ion implantation
US4407933A (en) * 1981-06-11 1983-10-04 Bell Telephone Laboratories, Incorporated Alignment marks for electron beam lithography
US4370195A (en) * 1982-03-25 1983-01-25 Rca Corporation Removal of plasma etching residues
US4412885A (en) * 1982-11-03 1983-11-01 Applied Materials, Inc. Materials and methods for plasma etching of aluminum and aluminum alloys
FR2537777A1 (fr) * 1982-12-10 1984-06-15 Commissariat Energie Atomique Procede et dispositif d'implantation de particules dans un solide
JPS59135730A (ja) * 1983-01-24 1984-08-04 Hitachi Ltd 表面改質装置
DD221201A1 (de) * 1983-12-09 1985-04-17 Univ Magdeburg Tech Verfahren zur maskenlosen herstellung von kohlenstoffschichten auf substraten
US4490211A (en) * 1984-01-24 1984-12-25 International Business Machines Corporation Laser induced chemical etching of metals with excimer lasers
US4550257A (en) * 1984-06-29 1985-10-29 International Business Machines Corporation Narrow line width pattern fabrication

Also Published As

Publication number Publication date
US4566937A (en) 1986-01-28
GB2165494A (en) 1986-04-16
JPS61154031A (ja) 1986-07-12
IT8522396A0 (it) 1985-10-09
FR2577714A1 (fr) 1986-08-22
GB2165494B (en) 1987-11-18
CA1226376A (fr) 1987-09-01
IT1186005B (it) 1987-11-18
DE3535890A1 (de) 1986-04-10
GB8523452D0 (en) 1985-10-30

Similar Documents

Publication Publication Date Title
FR2577714B1 (fr) Procede pour la formation de structures submicroniques a haute resolution sur une surface de substrat
BE859262A (fr) Procede pour la formation d'une couche epitaxiale de matiere sur une surface d'un substrat
EP0160248A3 (en) Method of forming thin photoresist lines on the surface of a substrate
FR2277114A1 (fr) Procede de formation d'une couche metallique sur un polyimide
FR2518429B1 (fr) Installation pour deposer en continu, sur la surface d'un substrat porte a haute temperature, une couche d'une matiere solide
FR2575187B1 (fr) Composition et procede pour le depot non-electrolytique de cuivre sur un substrat avec son procede de regarnissage, et substrat ainsi obtenu
FR2495025B1 (fr) Procede pour former a la surface d'un substrat un revetement de resine durcie correspondant a un dessin voulu
FR2501221B1 (fr) Encre conductrice thermodurcissable et procede pour former un revetement conducteur sur un substrat au moyen de cette encre
FR2584083B1 (fr) Procede de formation d'un film accumule en un compose aliphatique fluore sur la surface d'un substrat
FR2670693B1 (fr) Procede pour nettoyer la surface d'un substrat par plasma.
FR2497508B1 (fr) Procede de production d'un substrat en ceramique emaillee
FR2697852B1 (fr) Procédé de formation d'un revêtement céramique sur un substrat en présence d'ozone.
BE806866A (fr) Procede pour former un revetement d'aluminium sur un substrat d'acier
FR2601816B1 (fr) Procede de formation sur un substrat d'une couche de materiau semi-conducteur a base d'elements des groupes ii et vi
FR2498198B1 (fr) Revetement resistant positif et procede pour la formation d'un dessin de ce revetement sur un substrat
DE3571779D1 (en) Process for forming a wear-resistant layer on a substrate
DE3570458D1 (en) Process for forming a wear-resistant layer on a substrate
BE859202A (fr) Procede pour la formation d'une couche pourvue d'une structure sur un substrat
FR2588277B1 (fr) Procede de depot d'une couche de tungstene sur une surface dielectrique
FR2521315B1 (fr) Procede de formation d'une configuration dans une couche photoresist de seleniure de germanium, notamment pour realiser des microcircuits electroniques
FR2567659B1 (fr) Materiaux de formation d'une image sensibles a un faisceau de haute energie, procede de formation et element obtenu
BE896200A (fr) Procede de depot d'une couche de protection metallique et/ou ceramique sur un substrat
GB2192197B (en) Method of forming a metal film on the surface of a substrate metal
FR2566180B1 (fr) Procede pour la formation d'un isolateur sur une couche mise en configuration
FR2380636B1 (fr) Procede pour former une couche electriquement isolante sur un substrat

Legal Events

Date Code Title Description
ST Notification of lapse