KR910002452B1 - 반도체장치의 제조방법 - Google Patents

반도체장치의 제조방법 Download PDF

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Publication number
KR910002452B1
KR910002452B1 KR1019870009827A KR870009827A KR910002452B1 KR 910002452 B1 KR910002452 B1 KR 910002452B1 KR 1019870009827 A KR1019870009827 A KR 1019870009827A KR 870009827 A KR870009827 A KR 870009827A KR 910002452 B1 KR910002452 B1 KR 910002452B1
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KR
South Korea
Prior art keywords
layer
titanium
titanium nitride
formation
nitride layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019870009827A
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English (en)
Korean (ko)
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KR880008418A (ko
Inventor
하지메 아라이
Original Assignee
미쓰비시 뎅끼 가부시끼가이샤
시기모리야
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시 뎅끼 가부시끼가이샤, 시기모리야 filed Critical 미쓰비시 뎅끼 가부시끼가이샤
Publication of KR880008418A publication Critical patent/KR880008418A/ko
Application granted granted Critical
Publication of KR910002452B1 publication Critical patent/KR910002452B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/047—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein
    • H10W20/048—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein by using plasmas or gaseous environments, e.g. by nitriding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
    • H10D64/01125—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides the silicides being formed by chemical reaction with the semiconductor after the contact hole formation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/047—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1019870009827A 1986-12-24 1987-09-05 반도체장치의 제조방법 Expired KR910002452B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61309838A JPS63160328A (ja) 1986-12-24 1986-12-24 半導体装置の製造方法
JP309838 1986-12-24

Publications (2)

Publication Number Publication Date
KR880008418A KR880008418A (ko) 1988-08-31
KR910002452B1 true KR910002452B1 (ko) 1991-04-22

Family

ID=17997879

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870009827A Expired KR910002452B1 (ko) 1986-12-24 1987-09-05 반도체장치의 제조방법

Country Status (3)

Country Link
JP (1) JPS63160328A (https=)
KR (1) KR910002452B1 (https=)
DE (1) DE3743591A1 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920008842B1 (ko) * 1988-07-11 1992-10-09 삼성전자 주식회사 반도체장치의 금속배선막 도포방법
DE3930655A1 (de) * 1988-09-13 1990-03-22 Mitsubishi Electric Corp Halbleitervorrichtung mit vielschichtig gestapelter verbindungsschicht und verfahren zu deren herstellung
NL8900010A (nl) * 1989-01-04 1990-08-01 Philips Nv Halfgeleiderinrichting en werkwijze voor het vervaardigen van een halfgeleiderinrichting.
JP2720567B2 (ja) * 1990-03-28 1998-03-04 ソニー株式会社 半導体装置の製造方法
GB2242781A (en) * 1990-04-06 1991-10-09 Koninkl Philips Electronics Nv A semiconductor device
US5236868A (en) * 1990-04-20 1993-08-17 Applied Materials, Inc. Formation of titanium nitride on semiconductor wafer by reaction of titanium with nitrogen-bearing gas in an integrated processing system
US5250467A (en) * 1991-03-29 1993-10-05 Applied Materials, Inc. Method for forming low resistance and low defect density tungsten contacts to silicon semiconductor wafer
JP3280803B2 (ja) * 1994-08-18 2002-05-13 沖電気工業株式会社 半導体装置及びその製造方法
US5877087A (en) * 1995-11-21 1999-03-02 Applied Materials, Inc. Low temperature integrated metallization process and apparatus
US6066358A (en) * 1995-11-21 2000-05-23 Applied Materials, Inc. Blanket-selective chemical vapor deposition using an ultra-thin nucleation layer
JPH1064902A (ja) * 1996-07-12 1998-03-06 Applied Materials Inc アルミニウム材料の成膜方法及び成膜装置
US6001420A (en) * 1996-09-23 1999-12-14 Applied Materials, Inc. Semi-selective chemical vapor deposition
US6537905B1 (en) 1996-12-30 2003-03-25 Applied Materials, Inc. Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug
US6110828A (en) * 1996-12-30 2000-08-29 Applied Materials, Inc. In-situ capped aluminum plug (CAP) process using selective CVD AL for integrated plug/interconnect metallization
US6139905A (en) * 1997-04-11 2000-10-31 Applied Materials, Inc. Integrated CVD/PVD Al planarization using ultra-thin nucleation layers
US6605531B1 (en) 1997-11-26 2003-08-12 Applied Materials, Inc. Hole-filling technique using CVD aluminum and PVD aluminum integration
KR100510465B1 (ko) * 1998-05-12 2005-10-24 삼성전자주식회사 반도체장치의 배리어 금속막 형성방법
US6797620B2 (en) 2002-04-16 2004-09-28 Applied Materials, Inc. Method and apparatus for improved electroplating fill of an aperture

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3140669A1 (de) * 1981-10-13 1983-04-28 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von halbleitervorrichtungen

Also Published As

Publication number Publication date
KR880008418A (ko) 1988-08-31
DE3743591A1 (de) 1988-07-07
JPS63160328A (ja) 1988-07-04
DE3743591C2 (https=) 1992-12-17

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