KR910002039B1 - 반도체기억장치의 제조방법 - Google Patents

반도체기억장치의 제조방법 Download PDF

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Publication number
KR910002039B1
KR910002039B1 KR1019870004316A KR870004316A KR910002039B1 KR 910002039 B1 KR910002039 B1 KR 910002039B1 KR 1019870004316 A KR1019870004316 A KR 1019870004316A KR 870004316 A KR870004316 A KR 870004316A KR 910002039 B1 KR910002039 B1 KR 910002039B1
Authority
KR
South Korea
Prior art keywords
insulating film
capacitor
electrode
forming
relay electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019870004316A
Other languages
English (en)
Korean (ko)
Other versions
KR870011695A (ko
Inventor
아키히로 니타야마
Original Assignee
가부시키가이샤 도시바
와타리 스기이치로
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바, 와타리 스기이치로 filed Critical 가부시키가이샤 도시바
Publication of KR870011695A publication Critical patent/KR870011695A/ko
Application granted granted Critical
Publication of KR910002039B1 publication Critical patent/KR910002039B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
KR1019870004316A 1986-05-02 1987-05-02 반도체기억장치의 제조방법 Expired KR910002039B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61-102456 1986-05-02
JP61102456A JPS62259464A (ja) 1986-05-02 1986-05-02 半導体記憶装置の製造方法

Publications (2)

Publication Number Publication Date
KR870011695A KR870011695A (ko) 1987-12-26
KR910002039B1 true KR910002039B1 (ko) 1991-03-30

Family

ID=14327968

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870004316A Expired KR910002039B1 (ko) 1986-05-02 1987-05-02 반도체기억장치의 제조방법

Country Status (4)

Country Link
US (1) US4784969A (enExample)
JP (1) JPS62259464A (enExample)
KR (1) KR910002039B1 (enExample)
DE (1) DE3714338A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0824169B2 (ja) * 1989-05-10 1996-03-06 富士通株式会社 半導体記憶装置の製造方法
US5065273A (en) * 1990-12-04 1991-11-12 International Business Machines Corporation High capacity DRAM trench capacitor and methods of fabricating same
DE4132140A1 (de) * 1991-09-26 1993-04-08 Siemens Ag Verfahren zur herstellung einer selbstjustierten kontaktlochanordnung und selbstjustierte kontaktlochanordnung
US5395784A (en) * 1993-04-14 1995-03-07 Industrial Technology Research Institute Method of manufacturing low leakage and long retention time DRAM
US5406515A (en) * 1993-12-01 1995-04-11 International Business Machines Corporation Method for fabricating low leakage substrate plate trench DRAM cells and devices formed thereby
US6750091B1 (en) * 1996-03-01 2004-06-15 Micron Technology Diode formation method
US5998821A (en) * 1997-05-21 1999-12-07 Kabushiki Kaisha Toshiba Dynamic ram structure having a trench capacitor
JP2003197770A (ja) * 2001-12-25 2003-07-11 Mitsubishi Electric Corp 半導体装置およびその製造方法
CA2652424C (en) * 2006-05-18 2016-01-05 Smart Medical Systems Ltd. Flexible endoscope system and functionality

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5812739B2 (ja) * 1975-05-07 1983-03-10 株式会社日立製作所 半導体記憶装置
DE3243125A1 (de) * 1982-11-22 1984-05-24 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von mos-transistoren mit flachen source/drain-gebieten, selbstjustierten polysiliziumkontakten und kurzen kanallaengen
JPS60152058A (ja) * 1984-01-20 1985-08-10 Toshiba Corp 半導体記憶装置
JPS60175448A (ja) * 1984-02-21 1985-09-09 Toshiba Corp 半導体記憶装置及びその製造方法
US4658283A (en) * 1984-07-25 1987-04-14 Hitachi, Ltd. Semiconductor integrated circuit device having a carrier trapping trench arrangement
EP0201706B1 (en) * 1985-04-01 1991-09-18 Nec Corporation Dynamic random access memory device having a plurality of improved one-transistor type memory cells

Also Published As

Publication number Publication date
KR870011695A (ko) 1987-12-26
DE3714338C2 (enExample) 1991-12-19
US4784969A (en) 1988-11-15
JPS62259464A (ja) 1987-11-11
DE3714338A1 (de) 1987-11-05

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