KR900008207B1 - 반도체기억장치 - Google Patents

반도체기억장치 Download PDF

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Publication number
KR900008207B1
KR900008207B1 KR1019850006337A KR850006337A KR900008207B1 KR 900008207 B1 KR900008207 B1 KR 900008207B1 KR 1019850006337 A KR1019850006337 A KR 1019850006337A KR 850006337 A KR850006337 A KR 850006337A KR 900008207 B1 KR900008207 B1 KR 900008207B1
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KR
South Korea
Prior art keywords
transistor
region
impurity region
memory cell
oxide film
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Expired
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KR1019850006337A
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English (en)
Korean (ko)
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KR860005441A (ko
Inventor
유끼오 다께우찌
사또시 시노자끼
Original Assignee
가부시끼가이샤 도오시바
사바 쇼오이찌
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Publication date
Application filed by 가부시끼가이샤 도오시바, 사바 쇼오이찌 filed Critical 가부시끼가이샤 도오시바
Publication of KR860005441A publication Critical patent/KR860005441A/ko
Application granted granted Critical
Publication of KR900008207B1 publication Critical patent/KR900008207B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/30—Diffusion for doping of conductive or resistive layers
    • H10P32/302—Doping polycrystalline silicon or amorphous silicon layers

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
KR1019850006337A 1984-12-28 1985-08-30 반도체기억장치 Expired KR900008207B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP276181 1984-12-28
JP59276181A JPS61156862A (ja) 1984-12-28 1984-12-28 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR860005441A KR860005441A (ko) 1986-07-23
KR900008207B1 true KR900008207B1 (ko) 1990-11-05

Family

ID=17565841

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850006337A Expired KR900008207B1 (ko) 1984-12-28 1985-08-30 반도체기억장치

Country Status (5)

Country Link
US (2) US4994889A (enExample)
EP (1) EP0186889B1 (enExample)
JP (1) JPS61156862A (enExample)
KR (1) KR900008207B1 (enExample)
DE (1) DE3581914D1 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5264719A (en) * 1986-01-07 1993-11-23 Harris Corporation High voltage lateral semiconductor device
JPS63136557A (ja) * 1986-11-27 1988-06-08 Matsushita Electronics Corp 記憶装置
US5061654A (en) * 1987-07-01 1991-10-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit having oxide regions with different thickness
JP2810042B2 (ja) * 1987-09-16 1998-10-15 株式会社日立製作所 半導体集積回路装置
KR100212098B1 (ko) * 1987-09-19 1999-08-02 가나이 쓰도무 반도체 집적회로 장치 및 그 제조 방법과 반도체 집적 회로 장치의 배선기판 및 그 제조 방법
US5734188A (en) * 1987-09-19 1998-03-31 Hitachi, Ltd. Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same
JPH01129440A (ja) * 1987-11-14 1989-05-22 Fujitsu Ltd 半導体装置
JP2803729B2 (ja) * 1987-11-16 1998-09-24 株式会社 日立製作所 半導体集積回路装置の製造方法
US5917211A (en) * 1988-09-19 1999-06-29 Hitachi, Ltd. Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same
JPH02122563A (ja) * 1988-10-31 1990-05-10 Nec Corp 半導体装置の製造方法
JPH02144963A (ja) * 1988-11-28 1990-06-04 Hitachi Ltd 半導体集積回路装置及びその製造方法
JPH02163962A (ja) * 1988-12-17 1990-06-25 Nec Corp Ｍｏｓ型メモリ集積回路装置
JP2770416B2 (ja) * 1989-05-22 1998-07-02 日本電気株式会社 半導体記憶装置
DE4034169C2 (de) * 1989-10-26 1994-05-19 Mitsubishi Electric Corp DRAM mit einem Speicherzellenfeld und Herstellungsverfahren dafür
JP2673385B2 (ja) * 1989-10-26 1997-11-05 三菱電機株式会社 半導体装置
US5234853A (en) * 1990-03-05 1993-08-10 Fujitsu Limited Method of producing a high voltage MOS transistor
US5276344A (en) * 1990-04-27 1994-01-04 Mitsubishi Denki Kabushiki Kaisha Field effect transistor having impurity regions of different depths and manufacturing method thereof
KR930009127B1 (ko) * 1991-02-25 1993-09-23 삼성전자 주식회사 스택형캐패시터를구비하는반도체메모리장치
KR940000510B1 (ko) * 1991-03-20 1994-01-21 삼성전자 주식회사 반도체 메모리장치 및 그 제조방법
US5324680A (en) * 1991-05-22 1994-06-28 Samsung Electronics, Co. Ltd. Semiconductor memory device and the fabrication method thereof
US5395784A (en) * 1993-04-14 1995-03-07 Industrial Technology Research Institute Method of manufacturing low leakage and long retention time DRAM
US5545926A (en) 1993-10-12 1996-08-13 Kabushiki Kaisha Toshiba Integrated mosfet device with low resistance peripheral diffusion region contacts and low PN-junction failure memory diffusion contacts
KR100219533B1 (ko) * 1997-01-31 1999-09-01 윤종용 임베디드 메모리소자 및 그 제조방법
US6174756B1 (en) * 1997-09-30 2001-01-16 Siemens Aktiengesellschaft Spacers to block deep junction implants and silicide formation in integrated circuits
US5986314A (en) * 1997-10-08 1999-11-16 Texas Instruments Incorporated Depletion mode MOS capacitor with patterned Vt implants
US6066525A (en) * 1998-04-07 2000-05-23 Lsi Logic Corporation Method of forming DRAM capacitor by forming separate dielectric layers in a CMOS process
US20030158786A1 (en) * 1999-02-26 2003-08-21 Skyline Software Systems, Inc. Sending three-dimensional images over a network
JP2002280459A (ja) * 2001-03-21 2002-09-27 Kawasaki Microelectronics Kk 集積回路の製造方法
KR100428788B1 (ko) * 2001-12-03 2004-04-28 삼성전자주식회사 반도체 장치의 커패시터 구조체 및 그 형성 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4413401A (en) * 1979-07-23 1983-11-08 National Semiconductor Corporation Method for making a semiconductor capacitor
JPS5826829B2 (ja) * 1979-08-30 1983-06-06 富士通株式会社 ダイナミックメモリセルの製造方法
JPS56164570A (en) * 1980-05-21 1981-12-17 Fujitsu Ltd Semiconductor memory unit
US4409259A (en) * 1980-09-02 1983-10-11 Intel Corporation MOS Dynamic RAM cell and method of fabrication
US4364075A (en) * 1980-09-02 1982-12-14 Intel Corporation CMOS Dynamic RAM cell and method of fabrication
US4441249A (en) * 1982-05-26 1984-04-10 Bell Telephone Laboratories, Incorporated Semiconductor integrated circuit capacitor
JPS59113659A (ja) * 1982-12-20 1984-06-30 Toshiba Corp Ｍｏｓダイナミツクメモリ
US4536944A (en) * 1982-12-29 1985-08-27 International Business Machines Corporation Method of making ROM/PLA semiconductor device by late stage personalization
JPS59172265A (ja) * 1983-03-22 1984-09-28 Hitachi Ltd 半導体装置とその製造方法
JPS59211277A (ja) * 1983-05-17 1984-11-30 Toshiba Corp 半導体装置
US4466177A (en) * 1983-06-30 1984-08-21 International Business Machines Corporation Storage capacitor optimization for one device FET dynamic RAM cell

Also Published As

Publication number Publication date
KR860005441A (ko) 1986-07-23
JPH0433142B2 (enExample) 1992-06-02
US4994889A (en) 1991-02-19
EP0186889A3 (en) 1987-01-28
US5071784A (en) 1991-12-10
EP0186889A2 (en) 1986-07-09
EP0186889B1 (en) 1991-02-27
DE3581914D1 (de) 1991-04-04
JPS61156862A (ja) 1986-07-16

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