KR900007071A - 레지스트 패턴들을 형성하기 위한 전기 도전층 조성물 및 공정 - Google Patents

레지스트 패턴들을 형성하기 위한 전기 도전층 조성물 및 공정

Info

Publication number
KR900007071A
KR900007071A KR1019890014666A KR890014666A KR900007071A KR 900007071 A KR900007071 A KR 900007071A KR 1019890014666 A KR1019890014666 A KR 1019890014666A KR 890014666 A KR890014666 A KR 890014666A KR 900007071 A KR900007071 A KR 900007071A
Authority
KR
South Korea
Prior art keywords
conductive layer
electrically conductive
layer composition
resist patterns
forming resist
Prior art date
Application number
KR1019890014666A
Other languages
English (en)
Other versions
KR930006125B1 (ko
Inventor
유꼬 나까무라
사또시 다께찌
Original Assignee
후지쓰 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지쓰 가부시끼가이샤 filed Critical 후지쓰 가부시끼가이샤
Publication of KR900007071A publication Critical patent/KR900007071A/ko
Application granted granted Critical
Publication of KR930006125B1 publication Critical patent/KR930006125B1/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/093—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antistatic means, e.g. for charge depletion
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electron Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR1019890014666A 1988-10-13 1989-10-13 레지스트 패턴들을 형성하기 위한 전기 도전층 조성물 및 공정 KR930006125B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP(A)63-256022 1988-10-13
JP63256022A JPH02103547A (ja) 1988-10-13 1988-10-13 導電性層の形成方法

Publications (2)

Publication Number Publication Date
KR900007071A true KR900007071A (ko) 1990-05-09
KR930006125B1 KR930006125B1 (ko) 1993-07-07

Family

ID=17286828

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890014666A KR930006125B1 (ko) 1988-10-13 1989-10-13 레지스트 패턴들을 형성하기 위한 전기 도전층 조성물 및 공정

Country Status (4)

Country Link
US (1) US5019485A (ko)
EP (1) EP0364368A3 (ko)
JP (1) JPH02103547A (ko)
KR (1) KR930006125B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060088976A (ko) * 2005-02-03 2006-08-08 김봄 분비물 배출 생리용품

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6331356B1 (en) * 1989-05-26 2001-12-18 International Business Machines Corporation Patterns of electrically conducting polymers and their application as electrodes or electrical contacts
US5252430A (en) * 1989-10-25 1993-10-12 Matsushita Electric Industrial Co., Ltd. Fine pattern forming method
JP2586692B2 (ja) * 1990-05-24 1997-03-05 松下電器産業株式会社 パターン形成材料およびパターン形成方法
JP3019506B2 (ja) * 1991-08-13 2000-03-13 東レ株式会社 二層構造感放射線性レジストおよびその製造方法
JPH05226238A (ja) * 1991-10-31 1993-09-03 Internatl Business Mach Corp <Ibm> Ｅ−ビームレジスト用の塩基現像可能な放電トップ層
US5654354A (en) * 1991-11-14 1997-08-05 E. I. Du Pont De Nemours And Company Compositions for diffusion patterning
JPH05343308A (ja) * 1992-06-09 1993-12-24 Mitsubishi Electric Corp 半導体装置の製造方法
EP0615256B1 (en) * 1993-03-09 1998-09-23 Koninklijke Philips Electronics N.V. Method of manufacturing a pattern of an electrically conductive polymer on a substrate surface and method of metallizing such a pattern
EP0615257B1 (en) * 1993-03-09 1999-06-02 Koninklijke Philips Electronics N.V. Method of manufactoring a laminated structure of a metal layer on a conductive polymer layer
KR100380546B1 (ko) * 1994-02-24 2003-06-25 가부시끼가이샤 히다치 세이사꾸쇼 반도체집적회로장치의제조방법
US5879863A (en) * 1997-01-22 1999-03-09 Kabushiki Kaisha Toshiba Pattern forming method
US20010044077A1 (en) * 1999-04-16 2001-11-22 Zoilo Chen Ho Tan Stabilization of chemically amplified resist coating
US6727047B2 (en) 1999-04-16 2004-04-27 Applied Materials, Inc. Method of extending the stability of a photoresist during direct writing of an image upon the photoresist
US6969569B2 (en) 1999-04-16 2005-11-29 Applied Materials, Inc. Method of extending the stability of a photoresist during direct writing of an image
US6479820B1 (en) * 2000-04-25 2002-11-12 Advanced Micro Devices, Inc. Electrostatic charge reduction of photoresist pattern on development track
JP3760086B2 (ja) * 2000-07-07 2006-03-29 株式会社ルネサステクノロジ フォトマスクの製造方法
US6586158B2 (en) 2001-05-25 2003-07-01 The United States Of America As Represented By The Secretary Of The Navy Anti-charging layer for beam lithography and mask fabrication
JP4606136B2 (ja) 2004-06-09 2011-01-05 富士通株式会社 多層体、レジストパターン形成方法、微細加工パターンを有する装置の製造方法および電子装置
KR101182435B1 (ko) * 2005-02-03 2012-09-12 삼성디스플레이 주식회사 전도성 고분자 패턴막 및 이를 패터닝 하는 방법 그리고 이를 이용하는 유기전계 발광소자 및 그 제조방법
CN101622580B (zh) * 2007-02-27 2013-12-25 日产化学工业株式会社 形成电子束光刻用抗蚀剂下层膜的组合物
JP5830444B2 (ja) 2012-07-02 2015-12-09 信越ポリマー株式会社 導電性高分子組成物、該組成物より得られる帯電防止膜が設けられた被覆品、及び前記組成物を用いたパターン形成方法。

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5443681A (en) * 1977-09-13 1979-04-06 Mitsubishi Electric Corp Electron beam light-exposing method
JPS54116883A (en) * 1978-03-02 1979-09-11 Mitsubishi Electric Corp Electron beam exposure method
JPS56114323A (en) * 1980-02-15 1981-09-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Method for electron beam lighography
JPS56125834A (en) * 1980-03-07 1981-10-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Exposing method for electron beam
JPS56125833A (en) * 1980-03-07 1981-10-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Exposing method for electron beam
JPS5854633A (ja) * 1981-09-29 1983-03-31 Toshiba Corp 微細加工方法
JPH0629968B2 (ja) * 1982-02-08 1994-04-20 日本電信電話株式会社 パタ−ン形成法
JPS5993441A (ja) * 1982-11-19 1984-05-29 Hitachi Ltd レジスト
JPS59104126A (ja) * 1982-12-07 1984-06-15 Nippon Telegr & Teleph Corp <Ntt> 四層パタ−ン化方法
JPS59132124A (ja) * 1983-01-17 1984-07-30 Mitsubishi Electric Corp 半導体装置の製造方法
US4528118A (en) * 1983-04-28 1985-07-09 Agency Of Industrial Science And Technology Highly electroconductive conjugated polymer composition and process for producing the same
JPS62202518A (ja) * 1986-02-03 1987-09-07 Fujitsu Ltd Ｘ線露光用マスク
US4939070A (en) * 1986-07-28 1990-07-03 Brunsvold William R Thermally stable photoresists with high sensitivity
JPH0766189B2 (ja) * 1986-09-26 1995-07-19 住友化学工業株式会社 レジスト材料
JPS63181428A (ja) * 1987-01-23 1988-07-26 Matsushita Electronics Corp レジストパタ−ンの形成方法
JP2502564B2 (ja) * 1987-02-20 1996-05-29 松下電子工業株式会社 レジストパタ−ンの形成方法
JPH0795509B2 (ja) * 1987-04-10 1995-10-11 松下電子工業株式会社 レジストパタ−ンの形成方法
JPH081884B2 (ja) * 1987-04-10 1996-01-10 松下電子工業株式会社 レジストパタ−ンの形成方法
US4935094A (en) * 1989-05-26 1990-06-19 At&T Bell Laboratories Negative resist with oxygen plasma resistance

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060088976A (ko) * 2005-02-03 2006-08-08 김봄 분비물 배출 생리용품

Also Published As

Publication number Publication date
US5019485A (en) 1991-05-28
JPH02103547A (ja) 1990-04-16
EP0364368A2 (en) 1990-04-18
KR930006125B1 (ko) 1993-07-07
EP0364368A3 (en) 1991-10-02

Similar Documents

Publication Publication Date Title
KR900007071A (ko) 레지스트 패턴들을 형성하기 위한 전기 도전층 조성물 및 공정
KR890015077A (ko) 패턴형성용 레지스트물질 및 레지스트 패턴의 형성방법
KR890007380A (ko) 미세패턴형성방법
KR890016886A (ko) 인쇄 회로판의 제조방법
DE3561771D1 (en) Dry resist film and process for producing resist patterns
EP0224699A3 (en) Method of forming fine conductive lines, patterns and connnectors
IT1224772B (it) Serratura elettronica
KR910001923A (ko) 상이한 층 레벨에 위치한 배선층간의 전기 접촉을 형성하는 방법
EP0243121A3 (en) Method of forming functional films on fine transparent electric conductive circuit pattern and spaces thereof
KR910009129A (ko) 도체패턴형성용 감광성수지조성물과 다층프린트회로기판 및 그의 제조방법
GB8411412D0 (en) Forming resist pattern
KR910008807A (ko) 미세패턴의 형성방법
AU575364B2 (en) Forming conductive through-holes in dielectric layer
KR860005566A (ko) 기판에 도전회로를 형성하는 방법
DE69030057D1 (de) Elektrisches Bauelement mit Leiterbahnen
DE69032919T2 (de) Zusammengestellte Schaltungsplatte und Herstellungsverfahren dafür
EP0434045A3 (en) Method of forming conductive material selectively
GB8406376D0 (en) Substrate having one finewired conductive layer
GB8628789D0 (en) Forming conductive pattern
EP0360744A3 (en) Process for making electrically conductive patterns
KR900007287A (ko) 인쇄회로 및 그 제조공정
BR8504545A (pt) Camadas de base condutoras
DE58909024D1 (de) Leitfähige Oberflächenschicht.
GB8514823D0 (en) Forming insulator on patterned conductive layer
KR890015374A (ko) 레지스트 패턴 형성 공정

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee