KR900004730B1 - 반도체 기억장치(半導體記憶裝置) 및 그 제조방법 - Google Patents
반도체 기억장치(半導體記憶裝置) 및 그 제조방법 Download PDFInfo
- Publication number
- KR900004730B1 KR900004730B1 KR8204010A KR820004010A KR900004730B1 KR 900004730 B1 KR900004730 B1 KR 900004730B1 KR 8204010 A KR8204010 A KR 8204010A KR 820004010 A KR820004010 A KR 820004010A KR 900004730 B1 KR900004730 B1 KR 900004730B1
- Authority
- KR
- South Korea
- Prior art keywords
- region
- semiconductor
- voltage
- type
- gate
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 230000002093 peripheral effect Effects 0.000 claims abstract description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 16
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 10
- 238000005468 ion implantation Methods 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000003860 storage Methods 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 description 32
- 239000000758 substrate Substances 0.000 description 17
- 238000009792 diffusion process Methods 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000010884 ion-beam technique Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- -1 arsenic ions Chemical class 0.000 description 2
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56150604A JPS5852871A (ja) | 1981-09-25 | 1981-09-25 | 半導体記憶装置 |
JP56-150604 | 1981-09-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR840001780A KR840001780A (ko) | 1984-05-16 |
KR900004730B1 true KR900004730B1 (ko) | 1990-07-05 |
Family
ID=15500510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR8204010A KR900004730B1 (ko) | 1981-09-25 | 1982-09-04 | 반도체 기억장치(半導體記憶裝置) 및 그 제조방법 |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS5852871A (xx) |
KR (1) | KR900004730B1 (xx) |
DE (1) | DE3235411A1 (xx) |
FR (1) | FR2513793B1 (xx) |
GB (1) | GB2109994B (xx) |
HK (1) | HK70587A (xx) |
IT (1) | IT1155067B (xx) |
SG (1) | SG37387G (xx) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4516313A (en) * | 1983-05-27 | 1985-05-14 | Ncr Corporation | Unified CMOS/SNOS semiconductor fabrication process |
IT1213249B (it) * | 1984-11-26 | 1989-12-14 | Ates Componenti Elettron | Processo per la fabbricazione distrutture integrate includenti celle di memoria non volatili con strati di silicio autoallineati ed associati transistori. |
FR2583920B1 (fr) * | 1985-06-21 | 1987-07-31 | Commissariat Energie Atomique | Procede de fabrication d'un circuit integre et notamment d'une memoire eprom comportant deux composants distincts isoles electriquement |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3984822A (en) * | 1974-12-30 | 1976-10-05 | Intel Corporation | Double polycrystalline silicon gate memory device |
-
1981
- 1981-09-25 JP JP56150604A patent/JPS5852871A/ja active Pending
-
1982
- 1982-09-04 KR KR8204010A patent/KR900004730B1/ko active
- 1982-09-20 IT IT23344/82A patent/IT1155067B/it active
- 1982-09-21 FR FR828215874A patent/FR2513793B1/fr not_active Expired
- 1982-09-22 GB GB08227061A patent/GB2109994B/en not_active Expired
- 1982-09-24 DE DE19823235411 patent/DE3235411A1/de not_active Withdrawn
-
1987
- 1987-04-23 SG SG373/87A patent/SG37387G/en unknown
- 1987-10-01 HK HK705/87A patent/HK70587A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
IT1155067B (it) | 1987-01-21 |
DE3235411A1 (de) | 1983-04-14 |
KR840001780A (ko) | 1984-05-16 |
GB2109994B (en) | 1986-02-12 |
SG37387G (en) | 1987-07-24 |
FR2513793B1 (fr) | 1989-02-17 |
IT8223344A0 (it) | 1982-09-20 |
HK70587A (en) | 1987-10-09 |
GB2109994A (en) | 1983-06-08 |
FR2513793A1 (fr) | 1983-04-01 |
JPS5852871A (ja) | 1983-03-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5610421A (en) | Integrated circuit with EPROM cells | |
US5051793A (en) | Coplanar flash EPROM cell and method of making same | |
US5793086A (en) | NOR-type ROM with LDD cells and process of fabrication | |
US5300802A (en) | Semiconductor integrated circuit device having single-element type non-volatile memory elements | |
KR930007195B1 (ko) | 반도체 장치와 그 제조 방법 | |
US5321287A (en) | Semiconductor device wherein n-channel MOSFET, p-channel MOSFET and nonvolatile memory cell are formed in one chip | |
JP2555027B2 (ja) | 半導体記憶装置 | |
US7696557B2 (en) | Contactless uniform-tunneling separate p-well (CUSP) non-volatile memory array architecture, fabrication and operation | |
US20080153225A1 (en) | Non-Volatile Memory In CMOS Logic Process | |
JPH0586075B2 (xx) | ||
GB2120847A (en) | Integrated circuit | |
US4998220A (en) | EEPROM with improved erase structure | |
US5929478A (en) | Single level gate nonvolatile memory device and method for accessing the same | |
US20010021561A1 (en) | Non-volatile memory device and fabrication method thereof | |
US4484209A (en) | SOS Mosfet with thinned channel contact region | |
JPH03240275A (ja) | 不揮発性半導体装置 | |
KR100232200B1 (ko) | 비휘발성 메모리 소자 및 제조 방법 | |
JPH08330454A (ja) | 浮遊ゲート型不揮発性半導体記憶装置 | |
JPH0324070B2 (xx) | ||
KR900007742B1 (ko) | 불휘발성 메모리장치 | |
KR900004730B1 (ko) | 반도체 기억장치(半導體記憶裝置) 및 그 제조방법 | |
US6242782B1 (en) | Circuit for providing isolation of integrated circuit active areas | |
CN109712984B (zh) | Nor flash器件结构及其制造方法 | |
KR100196577B1 (ko) | 비휘발성 반도체 메모리 장치와 그 제조 공정 | |
US5557123A (en) | Nonvolatile semiconductor memory device with shaped floating gate |