KR900003257B1 - 보호회로를 갖는 반도체장치 - Google Patents
보호회로를 갖는 반도체장치 Download PDFInfo
- Publication number
- KR900003257B1 KR900003257B1 KR1019840002606A KR840002606A KR900003257B1 KR 900003257 B1 KR900003257 B1 KR 900003257B1 KR 1019840002606 A KR1019840002606 A KR 1019840002606A KR 840002606 A KR840002606 A KR 840002606A KR 900003257 B1 KR900003257 B1 KR 900003257B1
- Authority
- KR
- South Korea
- Prior art keywords
- protection
- diffusion region
- impurity
- region
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Mechanical Optical Scanning Systems (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Laser Beam Printer (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58119083A JPS6010765A (ja) | 1983-06-30 | 1983-06-30 | 半導体装置 |
| JP58-119083 | 1983-06-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR850000803A KR850000803A (ko) | 1985-03-09 |
| KR900003257B1 true KR900003257B1 (ko) | 1990-05-12 |
Family
ID=14752456
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019840002606A Expired KR900003257B1 (ko) | 1983-06-30 | 1984-05-14 | 보호회로를 갖는 반도체장치 |
| KR8403791A Expired KR900002967B1 (en) | 1983-06-30 | 1984-06-30 | Light beam scanning apparatus |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR8403791A Expired KR900002967B1 (en) | 1983-06-30 | 1984-06-30 | Light beam scanning apparatus |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4720737A (https=) |
| EP (1) | EP0130412B1 (https=) |
| JP (1) | JPS6010765A (https=) |
| KR (2) | KR900003257B1 (https=) |
| CA (1) | CA1204524A (https=) |
| DE (1) | DE3469246D1 (https=) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0659364B2 (ja) * | 1985-08-23 | 1994-08-10 | 株式会社日立製作所 | 放射性有機溶媒のイオン処理装置 |
| JPS6271275A (ja) * | 1985-09-25 | 1987-04-01 | Toshiba Corp | 半導体集積回路 |
| IT1186227B (it) * | 1985-12-03 | 1987-11-18 | Sgs Microelettronica Spa | Dispositivo di protezione contro le sovratensioni in ingresso per un circuito integrato di tipo mos |
| JPH065749B2 (ja) * | 1986-05-22 | 1994-01-19 | 日本電気株式会社 | 半導体装置 |
| FR2623018B1 (fr) * | 1987-11-06 | 1990-02-09 | Thomson Semiconducteurs | Circuit integre protege contre les decharges electrostatiques avec seuil de protection variable |
| USRE37477E1 (en) * | 1987-11-06 | 2001-12-18 | Sgs-Thomson Microelectronics, Inc. | Integrated circuit protected against electrostatic discharges, with variable protection threshold |
| US5141898A (en) * | 1988-02-02 | 1992-08-25 | Analog Devices, Incorporated | Integrated circuit with means for reducing ESD damage |
| US5687109A (en) * | 1988-05-31 | 1997-11-11 | Micron Technology, Inc. | Integrated circuit module having on-chip surge capacitors |
| US6124625A (en) * | 1988-05-31 | 2000-09-26 | Micron Technology, Inc. | Chip decoupling capacitor |
| CA2021184C (en) * | 1990-07-13 | 2000-10-17 | Orchard-Webb, John | Input protection device |
| EP0517391A1 (en) * | 1991-06-05 | 1992-12-09 | STMicroelectronics, Inc. | ESD protection circuit |
| JPH0617257U (ja) * | 1992-07-30 | 1994-03-04 | 鐘淵化学工業株式会社 | 太陽電池モジュール |
| BE1007672A3 (nl) * | 1993-10-27 | 1995-09-12 | Philips Electronics Nv | Hoogfrequent halfgeleiderinrichting met beveiligingsinrichting. |
| FR2716294B1 (fr) | 1994-01-28 | 1996-05-31 | Sgs Thomson Microelectronics | Procédé de réalisation d'un transistor bipolaire pour protection d'un circuit intégré contre les décharges électrostatiques. |
| JPH0951078A (ja) * | 1995-05-29 | 1997-02-18 | Mitsubishi Electric Corp | 半導体記憶装置および半導体装置 |
| JP3019760B2 (ja) * | 1995-11-15 | 2000-03-13 | 日本電気株式会社 | 半導体集積回路装置 |
| US6410964B1 (en) * | 1998-03-31 | 2002-06-25 | Nec Corporation | Semiconductor device capable of preventing gate oxide film from damage by plasma process and method of manufacturing the same |
| US6114756A (en) | 1998-04-01 | 2000-09-05 | Micron Technology, Inc. | Interdigitated capacitor design for integrated circuit leadframes |
| US6414391B1 (en) | 1998-06-30 | 2002-07-02 | Micron Technology, Inc. | Module assembly for stacked BGA packages with a common bus bar in the assembly |
| US20020060343A1 (en) * | 1999-03-19 | 2002-05-23 | Robert J. Gauthier | Diffusion resistor/capacitor (drc) non-aligned mosfet structure |
| JP3678212B2 (ja) * | 2002-05-20 | 2005-08-03 | ウシオ電機株式会社 | 超高圧水銀ランプ |
| US6755700B2 (en) * | 2002-11-12 | 2004-06-29 | Modevation Enterprises Inc. | Reset speed control for watercraft |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1170705A (en) * | 1967-02-27 | 1969-11-12 | Hitachi Ltd | An Insulated Gate Type Field Effect Semiconductor Device having a Breakdown Preventing Circuit Device and a method of manufacturing the same |
| US3673428A (en) * | 1970-09-18 | 1972-06-27 | Rca Corp | Input transient protection for complementary insulated gate field effect transistor integrated circuit device |
| JPS5189392A (https=) * | 1975-02-03 | 1976-08-05 | ||
| US4100561A (en) * | 1976-05-24 | 1978-07-11 | Rca Corp. | Protective circuit for MOS devices |
| JPS5392675A (en) * | 1977-01-26 | 1978-08-14 | Nippon Precision Circuits | Protecting circuit |
| JPS54140480A (en) * | 1978-04-24 | 1979-10-31 | Hitachi Ltd | Semiconductor device |
| US4476476A (en) * | 1979-04-05 | 1984-10-09 | National Semiconductor Corporation | CMOS Input and output protection circuit |
| JPS5694664A (en) * | 1979-12-27 | 1981-07-31 | Fujitsu Ltd | Semiconductor element |
| JPS56138953A (en) * | 1980-03-31 | 1981-10-29 | Fujitsu Ltd | Semiconductor device |
| JPS5715459A (en) * | 1980-07-01 | 1982-01-26 | Fujitsu Ltd | Semiconductor integrated circuit |
| JPS57109375A (en) * | 1980-12-26 | 1982-07-07 | Fujitsu Ltd | Mis type transistor protection circuit |
| US4602267A (en) * | 1981-02-17 | 1986-07-22 | Fujitsu Limited | Protection element for semiconductor device |
| JPS57190359A (en) * | 1981-05-19 | 1982-11-22 | Toshiba Corp | Protecting device for semiconductor |
| JPS57190360A (en) * | 1981-05-19 | 1982-11-22 | Toshiba Corp | Protecting device for semiconductor |
| JPS57211272A (en) * | 1981-06-23 | 1982-12-25 | Toshiba Corp | Semiconductor device |
| JPS5952866A (ja) * | 1982-09-20 | 1984-03-27 | Fujitsu Ltd | 半導体装置 |
-
1983
- 1983-06-30 JP JP58119083A patent/JPS6010765A/ja active Granted
-
1984
- 1984-05-14 KR KR1019840002606A patent/KR900003257B1/ko not_active Expired
- 1984-06-07 EP EP84106503A patent/EP0130412B1/en not_active Expired
- 1984-06-07 DE DE8484106503T patent/DE3469246D1/de not_active Expired
- 1984-06-29 CA CA000457879A patent/CA1204524A/en not_active Expired
- 1984-06-30 KR KR8403791A patent/KR900002967B1/ko not_active Expired
-
1986
- 1986-12-22 US US06/943,867 patent/US4720737A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0348663B2 (https=) | 1991-07-25 |
| KR850000803A (ko) | 1985-03-09 |
| US4720737A (en) | 1988-01-19 |
| KR900002967B1 (en) | 1990-05-03 |
| CA1204524A (en) | 1986-05-13 |
| EP0130412A1 (en) | 1985-01-09 |
| JPS6010765A (ja) | 1985-01-19 |
| KR850000705A (ko) | 1985-02-28 |
| EP0130412B1 (en) | 1988-02-03 |
| DE3469246D1 (en) | 1988-03-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR900003257B1 (ko) | 보호회로를 갖는 반도체장치 | |
| US4734752A (en) | Electrostatic discharge protection device for CMOS integrated circuit outputs | |
| US5502317A (en) | Silicon controlled rectifier and method for forming the same | |
| US6232163B1 (en) | Method of forming a semiconductor diode with depleted polysilicon gate structure | |
| US4503448A (en) | Semiconductor integrated circuit device with a high tolerance against abnormally high input voltage | |
| EP0452829A2 (en) | Semiconductor device with reduced time-dependent dielectric failures | |
| EP0057024A1 (en) | Semiconductor device having a safety device | |
| US6570229B1 (en) | Semiconductor device | |
| JPH10294430A (ja) | Soi集積回路のesd保護用の双安定擬似scrスイッチ | |
| EP0703621B1 (en) | Electrostatic discharge protection device for MOS integrated circuits | |
| US5045966A (en) | Method for forming capacitor using FET process and structure formed by same | |
| US5242849A (en) | Method for the fabrication of MOS devices | |
| US5604369A (en) | ESD protection device for high voltage CMOS applications | |
| US5221635A (en) | Method of making a field-effect transistor | |
| KR19990068200A (ko) | 디커플링 캐패시턴스 형성 방법 및 반도체 소자 | |
| EP0078571A1 (en) | Semiconductor device and method of manufacturing the same | |
| US7026705B2 (en) | Semiconductor device with surge protection circuit capable of preventing current leakage | |
| US4742015A (en) | Method for producing a protective arrangement for a field-effect transistor | |
| US5962898A (en) | Field-effect transistor | |
| US6281080B1 (en) | Fabrication method in improving ESD ability and vertical BJT gain | |
| JP3311759B2 (ja) | スクリーン構造を有する集積回路およびその製造方法 | |
| JPH0430194B2 (https=) | ||
| KR100238376B1 (ko) | 정전기 방지용 트랜지스터 및 그 제조방법 | |
| KR100428931B1 (ko) | 반도체 장치 및 그의 제조방법 | |
| JP2743814B2 (ja) | 半導体装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| G160 | Decision to publish patent application | ||
| PG1605 | Publication of application before grant of patent |
St.27 status event code: A-2-2-Q10-Q13-nap-PG1605 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U11-oth-PR1002 Fee payment year number: 1 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 6 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 7 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 8 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 9 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 10 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 11 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 12 |
|
| FPAY | Annual fee payment |
Payment date: 20020502 Year of fee payment: 13 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 13 |
|
| LAPS | Lapse due to unpaid annual fee | ||
| PC1903 | Unpaid annual fee |
St.27 status event code: A-4-4-U10-U13-oth-PC1903 Not in force date: 20030513 Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE |
|
| PC1903 | Unpaid annual fee |
St.27 status event code: N-4-6-H10-H13-oth-PC1903 Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 20030513 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |