JPS5694664A - Semiconductor element - Google Patents

Semiconductor element

Info

Publication number
JPS5694664A
JPS5694664A JP16917979A JP16917979A JPS5694664A JP S5694664 A JPS5694664 A JP S5694664A JP 16917979 A JP16917979 A JP 16917979A JP 16917979 A JP16917979 A JP 16917979A JP S5694664 A JPS5694664 A JP S5694664A
Authority
JP
Japan
Prior art keywords
current
load
transistor
region
small
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16917979A
Other languages
Japanese (ja)
Other versions
JPS6245705B2 (en
Inventor
Takeshi Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16917979A priority Critical patent/JPS5694664A/en
Publication of JPS5694664A publication Critical patent/JPS5694664A/en
Publication of JPS6245705B2 publication Critical patent/JPS6245705B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/0788—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type comprising combinations of diodes or capacitors or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thyristors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce the area of a circuit composed of a load and a transistor by inserting a high pressure-resisting small-current driving semiconductor element in between the high pressure resisting small-current load and the small-current transistor which switches the current flowing to the load. CONSTITUTION:To the high pressure-resisting small-current load 13 provided between a potential VH of negative polarity and an earthing potential is connected the small-current transistor 22 in which a current controlling signal Vin for switching the current to the load is inputted, whereby a circuit for driving high voltage ranging up to several hundreds voltage is constituted. In this constitution, in order that the area of the circuit may be reduced so as to make the same fitted for IC, the following semiconductor element 21 is inserted in between the load 13 and the transistor 22. That is, a diode composed of a P<+> type region 32 surrounded by a P<+> type region 33 which, in its turn, is surrounded by a P<-> type guard ring area 33 and another diode composed of a P<+> type region 34 contacting with the end part of the region 33 are formed on an N type semiconductor substrate 31. The region 32 of the element 21 thus formed is connected with the load 13, while the region 34 is connected with the transistor 22, and thereby it is made unnecessary to make the transistor 22 highly resisting to pressure.
JP16917979A 1979-12-27 1979-12-27 Semiconductor element Granted JPS5694664A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16917979A JPS5694664A (en) 1979-12-27 1979-12-27 Semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16917979A JPS5694664A (en) 1979-12-27 1979-12-27 Semiconductor element

Publications (2)

Publication Number Publication Date
JPS5694664A true JPS5694664A (en) 1981-07-31
JPS6245705B2 JPS6245705B2 (en) 1987-09-28

Family

ID=15881703

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16917979A Granted JPS5694664A (en) 1979-12-27 1979-12-27 Semiconductor element

Country Status (1)

Country Link
JP (1) JPS5694664A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010765A (en) * 1983-06-30 1985-01-19 Fujitsu Ltd Semiconductor device
JPS6064461A (en) * 1983-09-20 1985-04-13 Seiko Epson Corp Semiconductor device
CN104952911A (en) * 2015-06-11 2015-09-30 江苏东晨电子科技有限公司 Annular PN junction

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010765A (en) * 1983-06-30 1985-01-19 Fujitsu Ltd Semiconductor device
JPH0348663B2 (en) * 1983-06-30 1991-07-25 Fujitsu Ltd
JPS6064461A (en) * 1983-09-20 1985-04-13 Seiko Epson Corp Semiconductor device
CN104952911A (en) * 2015-06-11 2015-09-30 江苏东晨电子科技有限公司 Annular PN junction

Also Published As

Publication number Publication date
JPS6245705B2 (en) 1987-09-28

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