JPS57210683A - Semiconductor laser protective circuit - Google Patents

Semiconductor laser protective circuit

Info

Publication number
JPS57210683A
JPS57210683A JP9584581A JP9584581A JPS57210683A JP S57210683 A JPS57210683 A JP S57210683A JP 9584581 A JP9584581 A JP 9584581A JP 9584581 A JP9584581 A JP 9584581A JP S57210683 A JPS57210683 A JP S57210683A
Authority
JP
Japan
Prior art keywords
voltage
semiconductor laser
current
zener diode
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9584581A
Other languages
Japanese (ja)
Inventor
Yuichi Shimizu
Shinichi Katsu
Masaru Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9584581A priority Critical patent/JPS57210683A/en
Publication of JPS57210683A publication Critical patent/JPS57210683A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To effectively prevent the damage of a semiconductor laser due to a surge current by setting the breakdown voltage of a zener diode or ZNR (zinc oxide varistor) to more than sum of the voltages at both end of the semiconductor laser and a series resistor. CONSTITUTION:This circuit is constructed to satisfy the relationship of Vx= VL+RImax, where Imax represents the maximum allowable current, VL represents the voltage between the terminals when the current flows, and Vx represents the rising voltage of a voltage nonlinear element. When a positive impulse voltage is applied from a power source side, the rise of a zener diode 7 is abrupt in the voltage region above the Vx. Accordingly, the current flows to the zener diode 7 side, the current above the maximum allowable current will not flow at the side of a semiconductor laser 5, and the laser 5 will be protected. Since the low voltage is lower than the Vx at the ordinary operation time, the current flows only through the laser.
JP9584581A 1981-06-19 1981-06-19 Semiconductor laser protective circuit Pending JPS57210683A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9584581A JPS57210683A (en) 1981-06-19 1981-06-19 Semiconductor laser protective circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9584581A JPS57210683A (en) 1981-06-19 1981-06-19 Semiconductor laser protective circuit

Publications (1)

Publication Number Publication Date
JPS57210683A true JPS57210683A (en) 1982-12-24

Family

ID=14148706

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9584581A Pending JPS57210683A (en) 1981-06-19 1981-06-19 Semiconductor laser protective circuit

Country Status (1)

Country Link
JP (1) JPS57210683A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155985A (en) * 1983-02-24 1984-09-05 Mitsubishi Electric Corp Semiconductor laser device
JPS61107784A (en) * 1984-10-30 1986-05-26 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS62130584A (en) * 1985-12-02 1987-06-12 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPH02305485A (en) * 1989-05-19 1990-12-19 Matsushita Electric Ind Co Ltd Semiconductor laser protective circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5737497U (en) * 1980-08-11 1982-02-27

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5737497U (en) * 1980-08-11 1982-02-27

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155985A (en) * 1983-02-24 1984-09-05 Mitsubishi Electric Corp Semiconductor laser device
JPS61107784A (en) * 1984-10-30 1986-05-26 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS62130584A (en) * 1985-12-02 1987-06-12 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPH02305485A (en) * 1989-05-19 1990-12-19 Matsushita Electric Ind Co Ltd Semiconductor laser protective circuit

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