JPS5717163A - Complementary integrated circuit - Google Patents

Complementary integrated circuit

Info

Publication number
JPS5717163A
JPS5717163A JP9185080A JP9185080A JPS5717163A JP S5717163 A JPS5717163 A JP S5717163A JP 9185080 A JP9185080 A JP 9185080A JP 9185080 A JP9185080 A JP 9185080A JP S5717163 A JPS5717163 A JP S5717163A
Authority
JP
Japan
Prior art keywords
circuit
resistor
voltage
integrated circuit
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9185080A
Other languages
Japanese (ja)
Inventor
Masao Kayahara
Katsumi Nagayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP9185080A priority Critical patent/JPS5717163A/en
Publication of JPS5717163A publication Critical patent/JPS5717163A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Oscillators With Electromechanical Resonators (AREA)

Abstract

PURPOSE:To compose a complementary integrated circuit consuming low power by decreasing the power voltage for an oscillating circuit, a dividing circuit, and a control circuit than an external voltage by utilizing a resistor wherein the voltages in internal circuits are divided into two or more systems. CONSTITUTION:One end of a resistor element 8 is connected to the minus power terminal 7 in a complementary MOS integrated circuit and the other end 9 is connected to the minus power terminals, 1-b, 2-b, and 3-b in an oscillating circuit 1, a dividing circuit 2, and a control circuit 3. The plus power terminals, 1-a-5-a in all the circuits are commonly connected to a plus power terminal 6. The current consumption in the oscillating circuit 1, dividing circuit 2, and control circuit 3 flows into the resistor 8 and voltage drop across the resistor 8 is generated to decrease the operating voltage of the circuit 1-3 and current consumption. The input circuit 4 and output circuit 5 requiring predetermined voltage magnitude are directly connected to the minus power terminal 7.
JP9185080A 1980-07-04 1980-07-04 Complementary integrated circuit Pending JPS5717163A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9185080A JPS5717163A (en) 1980-07-04 1980-07-04 Complementary integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9185080A JPS5717163A (en) 1980-07-04 1980-07-04 Complementary integrated circuit

Publications (1)

Publication Number Publication Date
JPS5717163A true JPS5717163A (en) 1982-01-28

Family

ID=14038041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9185080A Pending JPS5717163A (en) 1980-07-04 1980-07-04 Complementary integrated circuit

Country Status (1)

Country Link
JP (1) JPS5717163A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05507134A (en) * 1990-04-03 1993-10-14 エイ．アフルストロム　コーポレーション Method and apparatus for generating heat and electricity in a sulfate pulp mill

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05507134A (en) * 1990-04-03 1993-10-14 エイ．アフルストロム　コーポレーション Method and apparatus for generating heat and electricity in a sulfate pulp mill

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