KR900002967B1 - Light beam scanning apparatus - Google Patents

Light beam scanning apparatus

Info

Publication number
KR900002967B1
KR900002967B1 KR8403791A KR840003791A KR900002967B1 KR 900002967 B1 KR900002967 B1 KR 900002967B1 KR 8403791 A KR8403791 A KR 8403791A KR 840003791 A KR840003791 A KR 840003791A KR 900002967 B1 KR900002967 B1 KR 900002967B1
Authority
KR
South Korea
Prior art keywords
light beam
beam scanning
hologram
rotator
scanning apparatus
Prior art date
Application number
KR8403791A
Other languages
English (en)
Other versions
KR850000705A (ko
Inventor
Fumio Yamagishi
Shinya Hasegawa
Ikeda Hiroyuki
Inagaki Takefumi
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of KR850000705A publication Critical patent/KR850000705A/ko
Application granted granted Critical
Publication of KR900002967B1 publication Critical patent/KR900002967B1/ko

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/10Scanning systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Mechanical Optical Scanning Systems (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Laser Beam Printer (AREA)
KR8403791A 1983-06-30 1984-06-30 Light beam scanning apparatus KR900002967B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58119083A JPS6010765A (ja) 1983-06-30 1983-06-30 半導体装置
JP???58-119098 1983-06-30

Publications (2)

Publication Number Publication Date
KR850000705A KR850000705A (ko) 1985-02-28
KR900002967B1 true KR900002967B1 (en) 1990-05-03

Family

ID=14752456

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1019840002606A KR900003257B1 (ko) 1983-06-30 1984-05-14 보호회로를 갖는 반도체장치
KR8403791A KR900002967B1 (en) 1983-06-30 1984-06-30 Light beam scanning apparatus

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR1019840002606A KR900003257B1 (ko) 1983-06-30 1984-05-14 보호회로를 갖는 반도체장치

Country Status (6)

Country Link
US (1) US4720737A (ko)
EP (1) EP0130412B1 (ko)
JP (1) JPS6010765A (ko)
KR (2) KR900003257B1 (ko)
CA (1) CA1204524A (ko)
DE (1) DE3469246D1 (ko)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0659364B2 (ja) * 1985-08-23 1994-08-10 株式会社日立製作所 放射性有機溶媒のイオン処理装置
JPS6271275A (ja) * 1985-09-25 1987-04-01 Toshiba Corp 半導体集積回路
IT1186227B (it) * 1985-12-03 1987-11-18 Sgs Microelettronica Spa Dispositivo di protezione contro le sovratensioni in ingresso per un circuito integrato di tipo mos
JPH065749B2 (ja) * 1986-05-22 1994-01-19 日本電気株式会社 半導体装置
FR2623018B1 (fr) * 1987-11-06 1990-02-09 Thomson Semiconducteurs Circuit integre protege contre les decharges electrostatiques avec seuil de protection variable
USRE37477E1 (en) * 1987-11-06 2001-12-18 Sgs-Thomson Microelectronics, Inc. Integrated circuit protected against electrostatic discharges, with variable protection threshold
US5141898A (en) * 1988-02-02 1992-08-25 Analog Devices, Incorporated Integrated circuit with means for reducing ESD damage
US6124625A (en) * 1988-05-31 2000-09-26 Micron Technology, Inc. Chip decoupling capacitor
US5687109A (en) 1988-05-31 1997-11-11 Micron Technology, Inc. Integrated circuit module having on-chip surge capacitors
CA2021184C (en) * 1990-07-13 2000-10-17 Orchard-Webb, John Input protection device
EP0517391A1 (en) * 1991-06-05 1992-12-09 STMicroelectronics, Inc. ESD protection circuit
JPH0617257U (ja) * 1992-07-30 1994-03-04 鐘淵化学工業株式会社 太陽電池モジュール
BE1007672A3 (nl) * 1993-10-27 1995-09-12 Philips Electronics Nv Hoogfrequent halfgeleiderinrichting met beveiligingsinrichting.
FR2716294B1 (fr) 1994-01-28 1996-05-31 Sgs Thomson Microelectronics Procédé de réalisation d'un transistor bipolaire pour protection d'un circuit intégré contre les décharges électrostatiques.
JPH0951078A (ja) * 1995-05-29 1997-02-18 Mitsubishi Electric Corp 半導体記憶装置および半導体装置
JP3019760B2 (ja) * 1995-11-15 2000-03-13 日本電気株式会社 半導体集積回路装置
US6410964B1 (en) * 1998-03-31 2002-06-25 Nec Corporation Semiconductor device capable of preventing gate oxide film from damage by plasma process and method of manufacturing the same
US6114756A (en) * 1998-04-01 2000-09-05 Micron Technology, Inc. Interdigitated capacitor design for integrated circuit leadframes
US6414391B1 (en) 1998-06-30 2002-07-02 Micron Technology, Inc. Module assembly for stacked BGA packages with a common bus bar in the assembly
US20020060343A1 (en) * 1999-03-19 2002-05-23 Robert J. Gauthier Diffusion resistor/capacitor (drc) non-aligned mosfet structure
JP3678212B2 (ja) * 2002-05-20 2005-08-03 ウシオ電機株式会社 超高圧水銀ランプ
US6755700B2 (en) * 2002-11-12 2004-06-29 Modevation Enterprises Inc. Reset speed control for watercraft

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1170705A (en) * 1967-02-27 1969-11-12 Hitachi Ltd An Insulated Gate Type Field Effect Semiconductor Device having a Breakdown Preventing Circuit Device and a method of manufacturing the same
US3673428A (en) * 1970-09-18 1972-06-27 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
JPS5189392A (ko) * 1975-02-03 1976-08-05
US4100561A (en) * 1976-05-24 1978-07-11 Rca Corp. Protective circuit for MOS devices
JPS5392675A (en) * 1977-01-26 1978-08-14 Nippon Precision Circuits Protecting circuit
JPS54140480A (en) * 1978-04-24 1979-10-31 Hitachi Ltd Semiconductor device
US4476476A (en) * 1979-04-05 1984-10-09 National Semiconductor Corporation CMOS Input and output protection circuit
JPS5694664A (en) * 1979-12-27 1981-07-31 Fujitsu Ltd Semiconductor element
JPS56138953A (en) * 1980-03-31 1981-10-29 Fujitsu Ltd Semiconductor device
JPS5715459A (en) * 1980-07-01 1982-01-26 Fujitsu Ltd Semiconductor integrated circuit
JPS57109375A (en) * 1980-12-26 1982-07-07 Fujitsu Ltd Mis type transistor protection circuit
US4602267A (en) * 1981-02-17 1986-07-22 Fujitsu Limited Protection element for semiconductor device
JPS57190360A (en) * 1981-05-19 1982-11-22 Toshiba Corp Protecting device for semiconductor
JPS57190359A (en) * 1981-05-19 1982-11-22 Toshiba Corp Protecting device for semiconductor
JPS57211272A (en) * 1981-06-23 1982-12-25 Toshiba Corp Semiconductor device
JPS5952866A (ja) * 1982-09-20 1984-03-27 Fujitsu Ltd 半導体装置

Also Published As

Publication number Publication date
EP0130412A1 (en) 1985-01-09
KR850000705A (ko) 1985-02-28
US4720737A (en) 1988-01-19
EP0130412B1 (en) 1988-02-03
KR850000803A (ko) 1985-03-09
JPS6010765A (ja) 1985-01-19
JPH0348663B2 (ko) 1991-07-25
CA1204524A (en) 1986-05-13
DE3469246D1 (en) 1988-03-10
KR900003257B1 (ko) 1990-05-12

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20010425

Year of fee payment: 12

LAPS Lapse due to unpaid annual fee