KR900002667B1 - The semiconductor memory device having complementary perceiving voltage in memory cell - Google Patents

The semiconductor memory device having complementary perceiving voltage in memory cell

Info

Publication number
KR900002667B1
KR900002667B1 KR8607289A KR860007289A KR900002667B1 KR 900002667 B1 KR900002667 B1 KR 900002667B1 KR 8607289 A KR8607289 A KR 8607289A KR 860007289 A KR860007289 A KR 860007289A KR 900002667 B1 KR900002667 B1 KR 900002667B1
Authority
KR
South Korea
Prior art keywords
voltage
memory cell
precharge
bit line
perceiving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR8607289A
Other languages
English (en)
Korean (ko)
Other versions
KR870004447A (ko
Inventor
Masao Nakano
Yosihiro Dakemae
Domio Nakano
Sigeki Nojaki
Gimiagi Satto
Nobumi Kodama
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of KR870004447A publication Critical patent/KR870004447A/ko
Application granted granted Critical
Publication of KR900002667B1 publication Critical patent/KR900002667B1/ko
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4099—Dummy cell treatment; Reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
KR8607289A 1985-10-08 1986-09-01 The semiconductor memory device having complementary perceiving voltage in memory cell Expired KR900002667B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60222757A JPS6282597A (ja) 1985-10-08 1985-10-08 半導体記憶装置
JP222757 1985-10-08

Publications (2)

Publication Number Publication Date
KR870004447A KR870004447A (ko) 1987-05-09
KR900002667B1 true KR900002667B1 (en) 1990-04-21

Family

ID=16787430

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8607289A Expired KR900002667B1 (en) 1985-10-08 1986-09-01 The semiconductor memory device having complementary perceiving voltage in memory cell

Country Status (5)

Country Link
US (1) US4716549A (https=)
EP (1) EP0223621B1 (https=)
JP (1) JPS6282597A (https=)
KR (1) KR900002667B1 (https=)
DE (1) DE3687037T2 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63308792A (ja) * 1987-06-10 1988-12-16 Mitsubishi Electric Corp 半導体記憶装置
JPH01171194A (ja) * 1987-12-25 1989-07-06 Nec Ic Microcomput Syst Ltd 半導体記憶装置
US5687109A (en) * 1988-05-31 1997-11-11 Micron Technology, Inc. Integrated circuit module having on-chip surge capacitors
KR930000899B1 (ko) * 1990-02-24 1993-02-11 현대전자산업 주식회사 다이나믹 램(dram)의 비트선 센스 증폭기의 균형 실현장치
US5135889A (en) * 1991-12-09 1992-08-04 Micron Technology, Inc. Method for forming a shielding structure for decoupling signal traces in a semiconductor
EP0663667B1 (de) * 1994-01-12 1999-03-03 Siemens Aktiengesellschaft Integrierte Halbleiterspeicherschaltung und Verfahren zu ihrem Betrieb
JP2748873B2 (ja) * 1995-01-04 1998-05-13 日本電気株式会社 強誘電体メモリ装置およびその動作制御方法
US5608668A (en) * 1995-12-22 1997-03-04 Micron Technology, Inc. Dram wtih open digit lines and array edge reference sensing
US10541031B2 (en) 2018-06-15 2020-01-21 Sandisk Technologies Llc Single pulse SLC programming scheme
US10825513B2 (en) 2018-06-26 2020-11-03 Sandisk Technologies Llc Parasitic noise control during sense operations

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3909631A (en) * 1973-08-02 1975-09-30 Texas Instruments Inc Pre-charge voltage generating system
US3946368A (en) * 1974-12-27 1976-03-23 Intel Corporation System for compensating voltage for a CCD sensing circuit
DE2647394C2 (de) * 1976-10-20 1978-11-16 Siemens Ag, 1000 Berlin Und 8000 Muenchen MOS-Halbleiterspeicherbaustein
JPS5939833B2 (ja) * 1977-05-24 1984-09-26 日本電気株式会社 センス増幅器
JPS6044752B2 (ja) * 1978-04-24 1985-10-05 日本電気株式会社 ダイナミツクメモリ
EP0189908B1 (en) * 1985-01-30 1992-10-28 Nec Corporation Dynamic memory with improved arrangement for precharging bit lines

Also Published As

Publication number Publication date
EP0223621B1 (en) 1992-10-28
DE3687037D1 (de) 1992-12-03
JPH0468716B2 (https=) 1992-11-04
US4716549A (en) 1987-12-29
EP0223621A3 (en) 1990-01-31
KR870004447A (ko) 1987-05-09
JPS6282597A (ja) 1987-04-16
EP0223621A2 (en) 1987-05-27
DE3687037T2 (de) 1993-03-11

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