KR960008530B1 - Dram cell - Google Patents

Dram cell Download PDF

Info

Publication number
KR960008530B1
KR960008530B1 KR92026924A KR920026924A KR960008530B1 KR 960008530 B1 KR960008530 B1 KR 960008530B1 KR 92026924 A KR92026924 A KR 92026924A KR 920026924 A KR920026924 A KR 920026924A KR 960008530 B1 KR960008530 B1 KR 960008530B1
Authority
KR
South Korea
Prior art keywords
dram cell
dram
simplifying
lies
storing
Prior art date
Application number
KR92026924A
Other languages
Korean (ko)
Other versions
KR940016833A (en
Inventor
Chan-Kwang Park
Yo-Hwan Ko
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Priority to KR92026924A priority Critical patent/KR960008530B1/en
Priority to JP5336496A priority patent/JPH06232370A/en
Publication of KR940016833A publication Critical patent/KR940016833A/en
Application granted granted Critical
Publication of KR960008530B1 publication Critical patent/KR960008530B1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug

Abstract

The DRAM cell includes a cell transistor(3) whose gate is connected to a word line(2), a storage capacitor(5), which is used as an element for storing a information, lies between a storage terminal(7) and bit line(1), thereby simplifying a DRAM structure.
KR92026924A 1992-12-30 1992-12-30 Dram cell KR960008530B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR92026924A KR960008530B1 (en) 1992-12-30 1992-12-30 Dram cell
JP5336496A JPH06232370A (en) 1992-12-30 1993-12-28 Dynamic ram cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR92026924A KR960008530B1 (en) 1992-12-30 1992-12-30 Dram cell

Publications (2)

Publication Number Publication Date
KR940016833A KR940016833A (en) 1994-07-25
KR960008530B1 true KR960008530B1 (en) 1996-06-26

Family

ID=19348078

Family Applications (1)

Application Number Title Priority Date Filing Date
KR92026924A KR960008530B1 (en) 1992-12-30 1992-12-30 Dram cell

Country Status (2)

Country Link
JP (1) JPH06232370A (en)
KR (1) KR960008530B1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6337497B1 (en) * 1997-05-16 2002-01-08 International Business Machines Corporation Common source transistor capacitor stack
US6201730B1 (en) * 1999-06-01 2001-03-13 Infineon Technologies North America Corp. Sensing of memory cell via a plateline
US8743591B2 (en) * 2011-04-26 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for driving the same
JP5901927B2 (en) * 2011-10-06 2016-04-13 株式会社半導体エネルギー研究所 Semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS594158A (en) * 1982-06-30 1984-01-10 Fujitsu Ltd Semiconductor memory device
JPS6130065A (en) * 1984-07-23 1986-02-12 Nec Corp Semiconductor memory cell
JPS61140172A (en) * 1984-12-13 1986-06-27 Toshiba Corp Semiconductor memory device
JPS61150366A (en) * 1984-12-25 1986-07-09 Nec Corp Mis type memory cell
JP2519216B2 (en) * 1986-08-20 1996-07-31 株式会社東芝 Semiconductor memory device
JPH06105770B2 (en) * 1988-02-04 1994-12-21 日本電気株式会社 Dynamic semiconductor memory device

Also Published As

Publication number Publication date
JPH06232370A (en) 1994-08-19
KR940016833A (en) 1994-07-25

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