KR940016833A - Dynamic ram cell - Google Patents

Dynamic ram cell Download PDF

Info

Publication number
KR940016833A
KR940016833A KR1019920026924A KR920026924A KR940016833A KR 940016833 A KR940016833 A KR 940016833A KR 1019920026924 A KR1019920026924 A KR 1019920026924A KR 920026924 A KR920026924 A KR 920026924A KR 940016833 A KR940016833 A KR 940016833A
Authority
KR
South Korea
Prior art keywords
cell
transistor
dynamic ram
line
capacitor
Prior art date
Application number
KR1019920026924A
Other languages
Korean (ko)
Other versions
KR960008530B1 (en
Inventor
박찬광
고요환
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR92026924A priority Critical patent/KR960008530B1/en
Priority to JP5336496A priority patent/JPH06232370A/en
Publication of KR940016833A publication Critical patent/KR940016833A/en
Application granted granted Critical
Publication of KR960008530B1 publication Critical patent/KR960008530B1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug

Abstract

본 발명은 DRAM 셀에서 스토리지 캐패시턴스를 줄일 수 있는 새로운 DRAM 셀 회로에 관한 것으로, 특히 한개의 트랜지스터와 한개의 캐패시터를 사용하여 구현한 새로운 다이나믹 램 셀에 관한 것으로, 한개의 트랜지스터와 한개의 캐패시터를 사용하여 구현한 새로운 다이나믹 램 셀은 ; DRAM 셀의 선택을 위한 연결선으로 사용하는 워드라인(2)에 게이트가 연결되는 셀 트랜지스터(3), 상기 셀 트랜지스터(3)의 드레인 단자(7)와 DRAM 셀의 정보를 읽고 쓰기 위한 연결선으로 사용하는 비트 라인(1)의 사이에 연결되어 정보저장을 위한 소자로 이용되는 스토리지 캐패시터(5)로 구성된 것을 특징으로 한다.The present invention relates to a new DRAM cell circuit that can reduce storage capacitance in a DRAM cell, and more particularly, to a new dynamic RAM cell implemented using one transistor and one capacitor, using one transistor and one capacitor. The new dynamic RAM cell implemented by Cell transistor 3 having a gate connected to a word line 2 used as a connection line for selecting a DRAM cell, and a drain line 7 of the cell transistor 3 and a connection line for reading and writing information of a DRAM cell. It is characterized by consisting of a storage capacitor 5 is connected between the bit line (1) used as an element for storing information.

Description

다이나믹 램 셀Dynamic ram cell

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 2 도는 본 발명에 따른 DRAM 셀의 구성도.2 is a block diagram of a DRAM cell according to the present invention.

Claims (1)

한개의 트랜지스터와 한개의 캐패시터를 사용하여 구현한 새로운 다이나믹 램 셀은 ; DRAM 셀의 선택을 위한 연결선으로 사용하는 워드라인(2)에 게이트가 연결되는 셀 트랜지스터(3), 상기 셀 트랜지스터(3)의 드레인 단자(7)와 DRAM 셀의 정보를 읽고 쓰기 위한 연결선으로 사용하는 비트 라인(1)의 사이에 연결되어 정보 저장을 위한 소자로 이용되는 스토리지 캐패시터(5)로 구성된 것을 특징으로 하는 다이나믹 램 셀.A new dynamic RAM cell implemented using one transistor and one capacitor; Cell transistor 3 having a gate connected to a word line 2 used as a connection line for selecting a DRAM cell, and a drain line 7 of the cell transistor 3 and a connection line for reading and writing information of a DRAM cell. Dynamic RAM cell, characterized in that consisting of a storage capacitor (5) connected between the bit line (1) to be used as an element for storing information. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR92026924A 1992-12-30 1992-12-30 Dram cell KR960008530B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR92026924A KR960008530B1 (en) 1992-12-30 1992-12-30 Dram cell
JP5336496A JPH06232370A (en) 1992-12-30 1993-12-28 Dynamic ram cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR92026924A KR960008530B1 (en) 1992-12-30 1992-12-30 Dram cell

Publications (2)

Publication Number Publication Date
KR940016833A true KR940016833A (en) 1994-07-25
KR960008530B1 KR960008530B1 (en) 1996-06-26

Family

ID=19348078

Family Applications (1)

Application Number Title Priority Date Filing Date
KR92026924A KR960008530B1 (en) 1992-12-30 1992-12-30 Dram cell

Country Status (2)

Country Link
JP (1) JPH06232370A (en)
KR (1) KR960008530B1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6337497B1 (en) * 1997-05-16 2002-01-08 International Business Machines Corporation Common source transistor capacitor stack
US6201730B1 (en) * 1999-06-01 2001-03-13 Infineon Technologies North America Corp. Sensing of memory cell via a plateline
US8743591B2 (en) * 2011-04-26 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for driving the same
JP5901927B2 (en) * 2011-10-06 2016-04-13 株式会社半導体エネルギー研究所 Semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS594158A (en) * 1982-06-30 1984-01-10 Fujitsu Ltd Semiconductor memory device
JPS6130065A (en) * 1984-07-23 1986-02-12 Nec Corp Semiconductor memory cell
JPS61140172A (en) * 1984-12-13 1986-06-27 Toshiba Corp Semiconductor memory device
JPS61150366A (en) * 1984-12-25 1986-07-09 Nec Corp Mis type memory cell
JP2519216B2 (en) * 1986-08-20 1996-07-31 株式会社東芝 Semiconductor memory device
JPH06105770B2 (en) * 1988-02-04 1994-12-21 日本電気株式会社 Dynamic semiconductor memory device

Also Published As

Publication number Publication date
KR960008530B1 (en) 1996-06-26
JPH06232370A (en) 1994-08-19

Similar Documents

Publication Publication Date Title
KR880004479A (en) Dynamic Semiconductor Memory Device
KR970023381A (en) Ferroelectric Memory
KR870008314A (en) Semiconductor memory
KR870008320A (en) Semiconductor memory device composed of different type memory cells
KR960012004A (en) Ferroelectric Memory Device
KR970017613A (en) Ferroelectric semiconductor memory and its access method
KR960030236A (en) A semiconductor device having memory cells for canceling parasitic capacitance of a bit line
KR920001533A (en) Semiconductor integrated circuit
KR870010549A (en) Semiconductor memory
KR940016833A (en) Dynamic ram cell
KR960042732A (en) Semiconductor memory cell
KR910006994A (en) Sense amplifier circuit
KR920010630A (en) Low Noise DRAM Cell
KR960025776A (en) Semiconductor Memory Reduces Power Consumption with a Shared Sense Amplifier Sense Lamp
KR870007511A (en) Data reading circuit
KR920022297A (en) Dynamic Random Access Memory Device
KR910010513A (en) Dynamic RAM Separation Circuit
KR970029824A (en) Semiconductor memory cell
KR900010789A (en) Memory element consisting of three transistors using one bit line and one word line
KR880006697A (en) Dynamic Random Access Memory Array
ATE64229T1 (en) INTEGRATED CIRCUIT OF A DYNAMIC SEMICONDUCTOR MEMORY DESIGNED WITH COMPLEMENTARY CIRCUIT TECHNOLOGY.
KR970018544A (en) Ferroelectric RAM (FRAM)
KR970017612A (en) Ferroelectric ram
KR920003518A (en) How to increase the capacitance of DRAM
JPS5683886A (en) Semiconductor storage device

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20060522

Year of fee payment: 11

LAPS Lapse due to unpaid annual fee