KR900002467A - 입력보호회로 - Google Patents

입력보호회로 Download PDF

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Publication number
KR900002467A
KR900002467A KR1019890010803A KR890010803A KR900002467A KR 900002467 A KR900002467 A KR 900002467A KR 1019890010803 A KR1019890010803 A KR 1019890010803A KR 890010803 A KR890010803 A KR 890010803A KR 900002467 A KR900002467 A KR 900002467A
Authority
KR
South Korea
Prior art keywords
resistor
emitter
protection circuit
input protection
parasitic bipolar
Prior art date
Application number
KR1019890010803A
Other languages
English (en)
Other versions
KR920005357B1 (ko
Inventor
요시오 오카다
사다오 이마다
미츠루 시미즈
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
다케다이 마사다카
도시바 마이크로 일렉트로닉스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바, 다케다이 마사다카, 도시바 마이크로 일렉트로닉스 가부시키가이샤 filed Critical 아오이 죠이치
Publication of KR900002467A publication Critical patent/KR900002467A/ko
Application granted granted Critical
Publication of KR920005357B1 publication Critical patent/KR920005357B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computing Systems (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Amplifiers (AREA)

Abstract

내용 없음.

Description

입력보호회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일실시예를 나타낸 구성도.

Claims (1)

  1. 입력패드(11)에 한쪽 끝이 접속된 제1저항(12)과, 이 제1저항(12)의 다른쪽 끝에 에미터가 접속되고 접지전위(VSS)에 콜렉터가 접속됨과 더불어 기판전위(VSS)에 베이스가 접속된 제1기생바이폴러트랜지스터(13), 이 제1기생바이폴러트랜지스터(13)의 에미터에 한쪽끝이 접속된 제2저항(16), 이 제2저항(16)의 다른쪽 끝에 에미터가 접속되고 접지전위(VSS)에 콜렉터가 접속됨과 더불어 기판전위(VSS)에 베이스가 접속된 제2기생바이폴러트랜지스터(17) 및, 이 제2기생바이폴러트랜지스터(17)의 에미터에 접속된 입력버퍼회로(14)를 구비하여 구성된 것을 특징으로 하는 입력보호회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890010803A 1988-07-29 1989-07-29 입력보호회로 KR920005357B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63190251A JPH07105472B2 (ja) 1988-07-29 1988-07-29 入力保護回路
JP88-190251 1988-07-29

Publications (2)

Publication Number Publication Date
KR900002467A true KR900002467A (ko) 1990-02-28
KR920005357B1 KR920005357B1 (ko) 1992-07-02

Family

ID=16255026

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890010803A KR920005357B1 (ko) 1988-07-29 1989-07-29 입력보호회로

Country Status (5)

Country Link
US (1) US4962320A (ko)
EP (1) EP0352769B1 (ko)
JP (1) JPH07105472B2 (ko)
KR (1) KR920005357B1 (ko)
DE (1) DE68927452T2 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5189638A (en) * 1990-04-26 1993-02-23 Mitsubishi Denki Kabushiki Kaisha Portable semiconductor memory device
US5301084A (en) * 1991-08-21 1994-04-05 National Semiconductor Corporation Electrostatic discharge protection for CMOS integrated circuits
JP2958202B2 (ja) * 1992-12-01 1999-10-06 シャープ株式会社 半導体装置
JPH06235347A (ja) * 1993-01-05 1994-08-23 Unisia Jecs Corp 内燃機関の燃料性状検出装置
US5594611A (en) * 1994-01-12 1997-01-14 Lsi Logic Corporation Integrated circuit input/output ESD protection circuit with gate voltage regulation and parasitic zener and junction diode
JP2822915B2 (ja) * 1995-04-03 1998-11-11 日本電気株式会社 半導体装置
WO2006079978A2 (en) * 2005-01-28 2006-08-03 Nxp B.V. Voltage integrator and transformer provided with such an integrator

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4066918A (en) * 1976-09-30 1978-01-03 Rca Corporation Protection circuitry for insulated-gate field-effect transistor (IGFET) circuits
JPS5591171A (en) * 1978-12-28 1980-07-10 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS57152160A (en) * 1981-03-13 1982-09-20 Mitsubishi Electric Corp Protective circuit for input
US4586104A (en) * 1983-12-12 1986-04-29 Rit Research Corp. Passive overvoltage protection devices, especially for protection of computer equipment connected to data lines
US4745450A (en) * 1984-03-02 1988-05-17 Zilog, Inc. Integrated circuit high voltage protection
US4605980A (en) * 1984-03-02 1986-08-12 Zilog, Inc. Integrated circuit high voltage protection
JPS60257576A (ja) * 1984-06-04 1985-12-19 Mitsubishi Electric Corp Ｍｉｓ形電界効果半導体装置の入力保護回路
US4763184A (en) * 1985-04-30 1988-08-09 Waferscale Integration, Inc. Input circuit for protecting against damage caused by electrostatic discharge
US4663584B1 (en) * 1985-06-10 1996-05-21 Toshiba Kk Intermediate potential generation circuit
JPS6266656A (ja) * 1985-09-19 1987-03-26 Toshiba Corp 基板電位生成回路
IT1186227B (it) * 1985-12-03 1987-11-18 Sgs Microelettronica Spa Dispositivo di protezione contro le sovratensioni in ingresso per un circuito integrato di tipo mos
JPS63233560A (ja) * 1987-03-23 1988-09-29 Toshiba Corp 入力保護回路を備えた半導体集積回路
US4819047A (en) * 1987-05-15 1989-04-04 Advanced Micro Devices, Inc. Protection system for CMOS integrated circuits
US4807080A (en) * 1987-06-15 1989-02-21 Zilog, Inc. Integrated circuit electrostatic discharge input protection

Also Published As

Publication number Publication date
JPH07105472B2 (ja) 1995-11-13
EP0352769B1 (en) 1996-11-13
DE68927452T2 (de) 1997-04-17
EP0352769A3 (en) 1991-03-20
KR920005357B1 (ko) 1992-07-02
DE68927452D1 (de) 1996-12-19
US4962320A (en) 1990-10-09
EP0352769A2 (en) 1990-01-31
JPH0239570A (ja) 1990-02-08

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