KR900001623A - 반도체 자기조성물 - Google Patents
반도체 자기조성물 Download PDFInfo
- Publication number
- KR900001623A KR900001623A KR1019890010071A KR890010071A KR900001623A KR 900001623 A KR900001623 A KR 900001623A KR 1019890010071 A KR1019890010071 A KR 1019890010071A KR 890010071 A KR890010071 A KR 890010071A KR 900001623 A KR900001623 A KR 900001623A
- Authority
- KR
- South Korea
- Prior art keywords
- amount
- added
- weight
- rare earth
- earth elements
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims 15
- 229910052782 aluminium Inorganic materials 0.000 claims 12
- 229910052787 antimony Inorganic materials 0.000 claims 6
- 229910052761 rare earth metal Inorganic materials 0.000 claims 6
- 229910052758 niobium Inorganic materials 0.000 claims 5
- 229910052720 vanadium Inorganic materials 0.000 claims 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims 4
- 229910052776 Thorium Inorganic materials 0.000 claims 4
- 229910052796 boron Inorganic materials 0.000 claims 4
- 229910052804 chromium Inorganic materials 0.000 claims 4
- 229910052802 copper Inorganic materials 0.000 claims 4
- 229910052733 gallium Inorganic materials 0.000 claims 4
- 229910052738 indium Inorganic materials 0.000 claims 4
- 229910052742 iron Inorganic materials 0.000 claims 4
- 229910052744 lithium Inorganic materials 0.000 claims 4
- 229910052749 magnesium Inorganic materials 0.000 claims 4
- 229910052748 manganese Inorganic materials 0.000 claims 4
- 239000000463 material Substances 0.000 claims 4
- 229910052750 molybdenum Inorganic materials 0.000 claims 4
- 229910052759 nickel Inorganic materials 0.000 claims 4
- 229910052762 osmium Inorganic materials 0.000 claims 4
- 229910052698 phosphorus Inorganic materials 0.000 claims 4
- 229910052700 potassium Inorganic materials 0.000 claims 4
- 229910052701 rubidium Inorganic materials 0.000 claims 4
- 229910052707 ruthenium Inorganic materials 0.000 claims 4
- 229910052706 scandium Inorganic materials 0.000 claims 4
- 229910052708 sodium Inorganic materials 0.000 claims 4
- 229910052725 zinc Inorganic materials 0.000 claims 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/47—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on strontium titanates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/472—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on lead titanates
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 내지 제5도는 각기 본 발명에 따른 반도체 자기조성물의 비저항 - 온도 특성 곡선을 나타내는 조성물.
Claims (8)
- SrO를 기준으로 하여 0.05~0.95몰의 Sr,PbO를 기준으로 하여 0.05~0185몰의 Pb,TiO₂를 기준으로하여 0.90~2.0몰의 Ti 및 R의 산화물을 기준으로 하여 0.001~0.3몰의 R을 구성하며, R이 회토류 원소, Bi,V,W,Ta,Nb 및 Sb로 구성되는 군으로 부터 선택한 적어도 하나의 물질이며, Ce,Bi,Sb를 제외한 회토류 원소의 양은 1/2(R₂O₃)를 기준으로 하며, V,Ta 및 W의 양은 1/2(R2O5)를 기준으로 하며, Ce 및 W의 양은 각기 RO₂및 RO₃를 기준으로 하고 산화성 분위기에서 소성처리하는 반도체 자기조성물.
- 제1항에 있어서, 0.001~30중량%의 양 만큼 첨가된 SiO₂를 더 구성하는 반도체 자기조성물.
- 제1항에 있어서, M을 더 구성하며, 상기 M이 Mn,Cu,Cr,Ni,Fe,Co,Ru,Os, Ge,Hf,P,Sb,V,Mg,Zn,W,Al,Mo,In,Ga,Nb,Ta,Bi,Sc, 회토류 원소, Th,Na,K,Li,B,Ag,Cs 및 Rb로 구성되는 군으로부터 선택한 적어도 하나의 물질이며, 상기 M이 Al 및 W를 제외하고는 0.00001~0.2중량%의 양만큼 첨가되고, Al 및 W 가 0.00001~8중량%의 양만큼 첨가되는 반도체 자기조성물.
- 제1항에 있어서, 0.001~30중량%의 양 만큼 첨가된 SiO₂ 및 M 을 더 구성하여, 상기 M이 Mn,Cu,Cr,Ni,Fe,Co,Ru,Os,Ge,Hf,P,Sb,V,Mg,Zn,W,Al,Mo,In,Ga,Nb,Ta, Bi, Sc, 회토류 원소, Th,Na,K,Li,B,Ag,Cs 및 Rb로 구성되는 군으로부터 선택한 적어도 하나의 물질이며, 상기 M이 Al 및 W를 제외하고는 0.00001~1.2중량%의 양만큼 첨가되고, Al 및 W 가 0.00001~8중량%의 양만큼 첨가되는 반도체 자기조성물.
- 제1항에 있어서, SrO 및 PbO가 0.001~0.3몰 만큼 BaO 및 CaO중 적어도 하나로 치환되는 반도체 자기조성물.
- 제5항에 있어서, 0.001~30중량%의 양만큼 첨가된 SiO₂를 더 구성하는 반도체 자기조성물.
- 제5항에 있어서, M 을 더 구성하여, 상기 M이 Mn,Cu,Cr,Ni,Fe,Co,Ru,Os, Ge,Hf,P,Sb,V,Mg,Zn,W,Al,Mo,In,Ga,Nb,Ta,Bi,Sc, 회토류 원소, Th,Na,K,Li,B,Ag,Cs 및 Rb로 구성되는 군으로부터 선택한 적어도 하나의 물질이며, 상기 M이 Al 및 W를 제외하고는 0.00001~1.2중량%의 양만큼 첨가되고, Al 및 W 가 0.00001~8중량%의 양만큼 첨가되는 반도체 자기조성물.
- 제5항에 있어서, 0.001~30중량%의 양만큼 첨가된 SiO₂및 M을 더 구성하며, 상기 M이 Mn,Cu,Cr,Ni,Fe,Co,Ru,Os,Ge,Hf,P,Sb,V,Mg,Zn,W,Al,Mo,In,Ga,Nb,Ta,Bi, Sc, 회토류 원소, Th,Na,K,Li,B,Ag,Cs 및 Rb로 구성되는 군으로부터 선택한 적어도 하나의 물질이며, 상기 M이 Al 및 W를 제외하고는 0.00001~1.2중량%의 양만큼 첨가되고, Al 및 W 가 0.00001~8중량%의 양만큼 첨가되는 반도체 자기조성물.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63173979A JP2733667B2 (ja) | 1988-07-14 | 1988-07-14 | 半導体磁器組成物 |
JP63-173979 | 1988-07-14 | ||
JP173979 | 1988-07-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900001623A true KR900001623A (ko) | 1990-02-27 |
KR940001655B1 KR940001655B1 (ko) | 1994-02-28 |
Family
ID=15970558
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890010071A KR940001655B1 (ko) | 1988-07-14 | 1989-07-14 | 반도체 자기 조성물 |
Country Status (8)
Country | Link |
---|---|
US (1) | US5084426A (ko) |
EP (1) | EP0350770B1 (ko) |
JP (1) | JP2733667B2 (ko) |
KR (1) | KR940001655B1 (ko) |
CN (1) | CN1016295B (ko) |
DE (1) | DE68911774T2 (ko) |
DK (1) | DK348089A (ko) |
MY (1) | MY104046A (ko) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5504330A (en) * | 1994-11-22 | 1996-04-02 | Texas Instruments Incorporated | Lead substitured perovskites for thin-film pyroelectric devices |
JP3106385B2 (ja) | 1994-11-28 | 2000-11-06 | 株式会社村田製作所 | 高周波検出素子とそれを用いた高周波加熱装置 |
JP3141719B2 (ja) * | 1995-01-18 | 2001-03-05 | 株式会社村田製作所 | 負の抵抗温度特性を有する半導体セラミックとそれを用いた半導体セラミック部品 |
US6136231A (en) * | 1998-11-20 | 2000-10-24 | Keystone Thermometrics, Inc. | Yttrium chromite chromia thermistors |
JP2001167904A (ja) * | 1999-12-09 | 2001-06-22 | Murata Mfg Co Ltd | 半導体磁器およびそれを用いた電子部品 |
JP3757794B2 (ja) * | 2000-12-26 | 2006-03-22 | 株式会社村田製作所 | サーミスタ用半導体磁器及びそれを用いたチップ型サーミスタ |
KR20030092720A (ko) * | 2002-05-31 | 2003-12-06 | 현대자동차주식회사 | 저 전기비 저항을 갖는 세라믹 ptc 조성물 |
WO2011086850A1 (ja) * | 2010-01-12 | 2011-07-21 | 株式会社村田製作所 | Ntcサーミスタ用半導体磁器組成物およびntcサーミスタ |
IT1402217B1 (it) * | 2010-10-05 | 2013-08-28 | Bitron Spa | Circuito di controllo per un attuatore a comando elettrico, in particolare un attuatore a solenoide |
CN102254657B (zh) * | 2011-03-23 | 2012-10-10 | 陕西华龙敏感电子元件有限责任公司 | Mmc基负温度系数功率型ntcr热敏电阻元件 |
CN103058649A (zh) * | 2012-12-27 | 2013-04-24 | 青岛艾德森能源科技有限公司 | 一种电阻的制备方法 |
CN103964839B (zh) * | 2013-01-30 | 2015-12-02 | 比亚迪股份有限公司 | 一种正温度系数热敏电阻材料及其制备方法 |
CN105321642B (zh) * | 2014-07-31 | 2017-12-08 | 中国振华集团云科电子有限公司 | 一种高tcr低方阻线性ntc电阻浆料的制备方法 |
DE102015110607A1 (de) * | 2015-07-01 | 2017-01-05 | Epcos Ag | Verfahren zur Herstellung eines elektrischen Bauelements |
CN107564641A (zh) * | 2017-08-21 | 2018-01-09 | 西北工业大学 | 一种ntc热敏电阻用半导体陶瓷组合物 |
CN108871452A (zh) * | 2018-07-16 | 2018-11-23 | 深圳众厉电力科技有限公司 | 基于多参量的家居环境检测系统 |
CN115536367A (zh) * | 2022-09-29 | 2022-12-30 | 肇庆市金龙宝电子有限公司 | 高阻值低b值热敏电阻陶瓷体、制备方法及热敏电阻 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1646988B2 (de) * | 1965-03-19 | 1973-06-14 | Siemens AG, 1000 Berlin u 8000 München | Verfahren zum herstellen polykristalliner scheiben-, stabrohr- oder folienfoermiger keramischer kaltleiter- bzw. dielektrikums- bzw. heissleiterkoerper |
US4022716A (en) * | 1973-04-27 | 1977-05-10 | Tdk Electronics Company, Limited | Semiconducting ceramics containing vanadium oxide |
US4048546A (en) * | 1975-07-09 | 1977-09-13 | E. I. Du Pont De Nemours And Company | Dielectric powder compositions |
DE2634896C2 (de) * | 1976-08-03 | 1985-08-14 | Siemens AG, 1000 Berlin und 8000 München | Kondensatordielektrikum mit inneren Sperrschichten und Verfahren zu seiner Herstellung |
JPS6023902A (ja) * | 1983-07-18 | 1985-02-06 | 株式会社村田製作所 | 誘電体磁器組成物 |
EP0157276B1 (en) * | 1984-03-30 | 1988-07-06 | Matsushita Electric Industrial Co., Ltd. | Voltage-dependent non-linear resistance ceramic composition |
US4582814A (en) * | 1984-07-05 | 1986-04-15 | E. I. Du Pont De Nemours And Company | Dielectric compositions |
JP2598907B2 (ja) * | 1987-05-12 | 1997-04-09 | ティーディーケイ株式会社 | 半導体磁器組成物 |
-
1988
- 1988-07-14 JP JP63173979A patent/JP2733667B2/ja not_active Expired - Lifetime
-
1989
- 1989-06-30 MY MYPI89000892A patent/MY104046A/en unknown
- 1989-07-04 DE DE68911774T patent/DE68911774T2/de not_active Revoked
- 1989-07-04 EP EP89112193A patent/EP0350770B1/en not_active Revoked
- 1989-07-13 US US07/379,420 patent/US5084426A/en not_active Expired - Lifetime
- 1989-07-13 DK DK348089A patent/DK348089A/da unknown
- 1989-07-14 KR KR1019890010071A patent/KR940001655B1/ko not_active IP Right Cessation
- 1989-07-14 CN CN89104911A patent/CN1016295B/zh not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE68911774T2 (de) | 1994-07-28 |
US5084426A (en) | 1992-01-28 |
DK348089D0 (da) | 1989-07-13 |
DK348089A (da) | 1990-01-15 |
MY104046A (en) | 1993-10-30 |
EP0350770B1 (en) | 1993-12-29 |
EP0350770A2 (en) | 1990-01-17 |
EP0350770A3 (en) | 1990-11-14 |
DE68911774D1 (de) | 1994-02-10 |
CN1039497A (zh) | 1990-02-07 |
JP2733667B2 (ja) | 1998-03-30 |
JPH0226866A (ja) | 1990-01-29 |
CN1016295B (zh) | 1992-04-15 |
KR940001655B1 (ko) | 1994-02-28 |
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