KR900001623A - 반도체 자기조성물 - Google Patents

반도체 자기조성물 Download PDF

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KR900001623A
KR900001623A KR1019890010071A KR890010071A KR900001623A KR 900001623 A KR900001623 A KR 900001623A KR 1019890010071 A KR1019890010071 A KR 1019890010071A KR 890010071 A KR890010071 A KR 890010071A KR 900001623 A KR900001623 A KR 900001623A
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amount
added
weight
rare earth
earth elements
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KR1019890010071A
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KR940001655B1 (ko
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소이찌 이와야
히또시 마수무라
하르우오 다구찌
무네미쓰 하마다
도모히로 소가베
시게야 다까하사
히로유끼 사또
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사또오 히로시
티이디이케이 가부시끼가이샤
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    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/46Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • C04B35/462Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
    • C04B35/465Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
    • C04B35/47Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on strontium titanates
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/46Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • C04B35/462Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
    • C04B35/472Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on lead titanates

Abstract

내용 없음

Description

반도체 자기조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 내지 제5도는 각기 본 발명에 따른 반도체 자기조성물의 비저항 - 온도 특성 곡선을 나타내는 조성물.

Claims (8)

  1. SrO를 기준으로 하여 0.05~0.95몰의 Sr,PbO를 기준으로 하여 0.05~0185몰의 Pb,TiO₂를 기준으로하여 0.90~2.0몰의 Ti 및 R의 산화물을 기준으로 하여 0.001~0.3몰의 R을 구성하며, R이 회토류 원소, Bi,V,W,Ta,Nb 및 Sb로 구성되는 군으로 부터 선택한 적어도 하나의 물질이며, Ce,Bi,Sb를 제외한 회토류 원소의 양은 1/2(R₂O₃)를 기준으로 하며, V,Ta 및 W의 양은 1/2(R2O5)를 기준으로 하며, Ce 및 W의 양은 각기 RO₂및 RO₃를 기준으로 하고 산화성 분위기에서 소성처리하는 반도체 자기조성물.
  2. 제1항에 있어서, 0.001~30중량%의 양 만큼 첨가된 SiO₂를 더 구성하는 반도체 자기조성물.
  3. 제1항에 있어서, M을 더 구성하며, 상기 M이 Mn,Cu,Cr,Ni,Fe,Co,Ru,Os, Ge,Hf,P,Sb,V,Mg,Zn,W,Al,Mo,In,Ga,Nb,Ta,Bi,Sc, 회토류 원소, Th,Na,K,Li,B,Ag,Cs 및 Rb로 구성되는 군으로부터 선택한 적어도 하나의 물질이며, 상기 M이 Al 및 W를 제외하고는 0.00001~0.2중량%의 양만큼 첨가되고, Al 및 W 가 0.00001~8중량%의 양만큼 첨가되는 반도체 자기조성물.
  4. 제1항에 있어서, 0.001~30중량%의 양 만큼 첨가된 SiO₂ 및 M 을 더 구성하여, 상기 M이 Mn,Cu,Cr,Ni,Fe,Co,Ru,Os,Ge,Hf,P,Sb,V,Mg,Zn,W,Al,Mo,In,Ga,Nb,Ta, Bi, Sc, 회토류 원소, Th,Na,K,Li,B,Ag,Cs 및 Rb로 구성되는 군으로부터 선택한 적어도 하나의 물질이며, 상기 M이 Al 및 W를 제외하고는 0.00001~1.2중량%의 양만큼 첨가되고, Al 및 W 가 0.00001~8중량%의 양만큼 첨가되는 반도체 자기조성물.
  5. 제1항에 있어서, SrO 및 PbO가 0.001~0.3몰 만큼 BaO 및 CaO중 적어도 하나로 치환되는 반도체 자기조성물.
  6. 제5항에 있어서, 0.001~30중량%의 양만큼 첨가된 SiO₂를 더 구성하는 반도체 자기조성물.
  7. 제5항에 있어서, M 을 더 구성하여, 상기 M이 Mn,Cu,Cr,Ni,Fe,Co,Ru,Os, Ge,Hf,P,Sb,V,Mg,Zn,W,Al,Mo,In,Ga,Nb,Ta,Bi,Sc, 회토류 원소, Th,Na,K,Li,B,Ag,Cs 및 Rb로 구성되는 군으로부터 선택한 적어도 하나의 물질이며, 상기 M이 Al 및 W를 제외하고는 0.00001~1.2중량%의 양만큼 첨가되고, Al 및 W 가 0.00001~8중량%의 양만큼 첨가되는 반도체 자기조성물.
  8. 제5항에 있어서, 0.001~30중량%의 양만큼 첨가된 SiO₂및 M을 더 구성하며, 상기 M이 Mn,Cu,Cr,Ni,Fe,Co,Ru,Os,Ge,Hf,P,Sb,V,Mg,Zn,W,Al,Mo,In,Ga,Nb,Ta,Bi, Sc, 회토류 원소, Th,Na,K,Li,B,Ag,Cs 및 Rb로 구성되는 군으로부터 선택한 적어도 하나의 물질이며, 상기 M이 Al 및 W를 제외하고는 0.00001~1.2중량%의 양만큼 첨가되고, Al 및 W 가 0.00001~8중량%의 양만큼 첨가되는 반도체 자기조성물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890010071A 1988-07-14 1989-07-14 반도체 자기 조성물 KR940001655B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63173979A JP2733667B2 (ja) 1988-07-14 1988-07-14 半導体磁器組成物
JP63-173979 1988-07-14
JP173979 1988-07-14

Publications (2)

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KR900001623A true KR900001623A (ko) 1990-02-27
KR940001655B1 KR940001655B1 (ko) 1994-02-28

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KR1019890010071A KR940001655B1 (ko) 1988-07-14 1989-07-14 반도체 자기 조성물

Country Status (8)

Country Link
US (1) US5084426A (ko)
EP (1) EP0350770B1 (ko)
JP (1) JP2733667B2 (ko)
KR (1) KR940001655B1 (ko)
CN (1) CN1016295B (ko)
DE (1) DE68911774T2 (ko)
DK (1) DK348089A (ko)
MY (1) MY104046A (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5504330A (en) * 1994-11-22 1996-04-02 Texas Instruments Incorporated Lead substitured perovskites for thin-film pyroelectric devices
JP3106385B2 (ja) 1994-11-28 2000-11-06 株式会社村田製作所 高周波検出素子とそれを用いた高周波加熱装置
JP3141719B2 (ja) * 1995-01-18 2001-03-05 株式会社村田製作所 負の抵抗温度特性を有する半導体セラミックとそれを用いた半導体セラミック部品
US6136231A (en) * 1998-11-20 2000-10-24 Keystone Thermometrics, Inc. Yttrium chromite chromia thermistors
JP2001167904A (ja) * 1999-12-09 2001-06-22 Murata Mfg Co Ltd 半導体磁器およびそれを用いた電子部品
JP3757794B2 (ja) * 2000-12-26 2006-03-22 株式会社村田製作所 サーミスタ用半導体磁器及びそれを用いたチップ型サーミスタ
KR20030092720A (ko) * 2002-05-31 2003-12-06 현대자동차주식회사 저 전기비 저항을 갖는 세라믹 ptc 조성물
JPWO2011086850A1 (ja) * 2010-01-12 2013-05-16 株式会社村田製作所 Ntcサーミスタ用半導体磁器組成物およびntcサーミスタ
IT1402217B1 (it) 2010-10-05 2013-08-28 Bitron Spa Circuito di controllo per un attuatore a comando elettrico, in particolare un attuatore a solenoide
CN102254657B (zh) * 2011-03-23 2012-10-10 陕西华龙敏感电子元件有限责任公司 Mmc基负温度系数功率型ntcr热敏电阻元件
CN103058649A (zh) * 2012-12-27 2013-04-24 青岛艾德森能源科技有限公司 一种电阻的制备方法
CN103964839B (zh) * 2013-01-30 2015-12-02 比亚迪股份有限公司 一种正温度系数热敏电阻材料及其制备方法
CN105321642B (zh) * 2014-07-31 2017-12-08 中国振华集团云科电子有限公司 一种高tcr低方阻线性ntc电阻浆料的制备方法
DE102015110607A1 (de) * 2015-07-01 2017-01-05 Epcos Ag Verfahren zur Herstellung eines elektrischen Bauelements
CN107564641A (zh) * 2017-08-21 2018-01-09 西北工业大学 一种ntc热敏电阻用半导体陶瓷组合物
CN108871452A (zh) * 2018-07-16 2018-11-23 深圳众厉电力科技有限公司 基于多参量的家居环境检测系统
CN115536367A (zh) * 2022-09-29 2022-12-30 肇庆市金龙宝电子有限公司 高阻值低b值热敏电阻陶瓷体、制备方法及热敏电阻

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DE1646988B2 (de) * 1965-03-19 1973-06-14 Siemens AG, 1000 Berlin u 8000 München Verfahren zum herstellen polykristalliner scheiben-, stabrohr- oder folienfoermiger keramischer kaltleiter- bzw. dielektrikums- bzw. heissleiterkoerper
US4022716A (en) * 1973-04-27 1977-05-10 Tdk Electronics Company, Limited Semiconducting ceramics containing vanadium oxide
US4048546A (en) * 1975-07-09 1977-09-13 E. I. Du Pont De Nemours And Company Dielectric powder compositions
DE2634896C2 (de) * 1976-08-03 1985-08-14 Siemens AG, 1000 Berlin und 8000 München Kondensatordielektrikum mit inneren Sperrschichten und Verfahren zu seiner Herstellung
JPS6023902A (ja) * 1983-07-18 1985-02-06 株式会社村田製作所 誘電体磁器組成物
DE3563610D1 (de) * 1984-03-30 1988-08-11 Matsushita Electric Ind Co Ltd Voltage-dependent non-linear resistance ceramic composition
US4582814A (en) * 1984-07-05 1986-04-15 E. I. Du Pont De Nemours And Company Dielectric compositions
JP2598907B2 (ja) * 1987-05-12 1997-04-09 ティーディーケイ株式会社 半導体磁器組成物

Also Published As

Publication number Publication date
DK348089A (da) 1990-01-15
DK348089D0 (da) 1989-07-13
JP2733667B2 (ja) 1998-03-30
JPH0226866A (ja) 1990-01-29
KR940001655B1 (ko) 1994-02-28
EP0350770A2 (en) 1990-01-17
CN1039497A (zh) 1990-02-07
EP0350770B1 (en) 1993-12-29
MY104046A (en) 1993-10-30
CN1016295B (zh) 1992-04-15
US5084426A (en) 1992-01-28
DE68911774T2 (de) 1994-07-28
DE68911774D1 (de) 1994-02-10
EP0350770A3 (en) 1990-11-14

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