KR890013825A - 공통 기재상의 비정질 실리콘 박막 태양전지와 쇼트키 장벽 다이오드 - Google Patents

공통 기재상의 비정질 실리콘 박막 태양전지와 쇼트키 장벽 다이오드 Download PDF

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KR890013825A
KR890013825A KR1019890001244A KR890001244A KR890013825A KR 890013825 A KR890013825 A KR 890013825A KR 1019890001244 A KR1019890001244 A KR 1019890001244A KR 890001244 A KR890001244 A KR 890001244A KR 890013825 A KR890013825 A KR 890013825A
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diode
solar cell
schottky barrier
conductive layer
substrate
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KR1019890001244A
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티·트랜 낭
피·웬즈 로버트
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도널드 밀러
미네소타 마이닝 앤드 매뉴팩츄어링 캄파니
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Publication of KR890013825A publication Critical patent/KR890013825A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/142—Energy conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

내용 없음.

Description

공통 기재상의 비정질 실리콘 박막 태양전지와 쇼트키 장벽 다이오드
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일 실시태양에 다른 태양전지와 쇼트키 장벽 다이오드를 포함하는 집적 회로의 단면도.
제2도는 제1도에 도시된 집적 회로를 제조하는데 사용된 장치를 측면을 취하여 설명하는 개략도.
제3도는 제1도에 도시된 집적회로를 제조하는데 사용된 장치를 상부를 취하여 설명하는 개략도.

Claims (8)

  1. 가요성 기재와 ; 상기 기재위의 제1전도성 층과 ; 상기 제1전도성 층위의 다이오드 부분에 걸쳐서 다이오드 몸체를 형성하는 하나 또는 그 이상의 실리콘 층과 ; 상기 제1전도성 층위의 태양 전지 부분에 걸쳐서 태양 전지 몸체를 형성하는 하나 또는 그 이상의 실리콘 층을 포함하며, 상기 태양전지 몸체는 상기 다이오드 몸체에 인접하고 상기 태양전지 부분과 상기 다이오드 부분간에 분리부분을 형성하기 위해 상기 다이오드 몸체로부터 이격되며 ; 상기 다이오드 몸체와 태양 전지 몸체 사이의 분리부분 내의 절연재와 ; 상기 다이오드 몸체와 태양 전지 몸체위의 제2전도성 층을 포함하며, 상기 다이오드 몸체는 상기 제1 및 제2전도성 재질의 층 중의 한 층과 함께 오믹 접촉을 형성하며, 다른 전도성 층과 함께 쇼트키 장벽을 형성하는 공통 기재상의 비정질 실리콘 박막 태양 전지와 쇼트키 장벽 다이오드.
  2. 제1항에 있어서, 상기 기재는 얇고 가요성이며 가소성인 기재를 포함하는 상기 태양 전지와 쇼트키 장벽 다이오드.
  3. 제2항에 있어서, 상기 기재는 폴리이미드 기재를 포함하는 상기 태양 전지와 쇼트키 장벽 다이오드.
  4. 제1항에 있어서, 상기 제1전도성 층은 상기 기판에 걸쳐 침착된 금속 층과 ; 상기 금속 층위에 침착된 티타늄 니트라이드 확산장벽층을 포함하는 상기 태양 전지와 쇼트키 장벽 다이오드.
  5. 제4항에 있어서, 상기 금속 층을 알루미늄 층은 포함하는 상기 태양 전지와 쇼트키 장벽 다이오드.
  6. 제5항에 있어서, 상기 티타늄 니트라이드 확산 장벽층은 일백 내지 삼백 옹스트롱의 범위의 두께로 침착되는 상기 태양전지와 쇼트키 장벽 다이오드.
  7. 제1항에 있어서, 상기 다이오드 몸체는 입방 센티미터당 1018내지 1020원자 농도로 인 도우프된 n형 실리콘 층을 포함하는 상기 태양 전지와 쇼트키 장벽 다이오드.
  8. 제1항에 있어서, 상기 태양 전지 몸체와 다이오드 몸체는 상기 제1전도성 층 위에 침착된 분리되지 않은 n형 실리콘층을 포함하는 상기 태양 전지와 쇼트키 장벽 다이오드.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890001244A 1988-02-05 1989-02-03 공통 기재상의 비정질 실리콘 박막 태양전지와 쇼트키 장벽 다이오드 KR890013825A (ko)

Applications Claiming Priority (2)

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US15289588A 1988-02-05 1988-02-05
US152,895 1988-02-05

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KR890013825A true KR890013825A (ko) 1989-09-26

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EP (1) EP0327023B1 (ko)
JP (1) JPH025575A (ko)
KR (1) KR890013825A (ko)
DE (1) DE68922008D1 (ko)
MY (1) MY104396A (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2312872T3 (es) * 1998-05-28 2009-03-01 Emcore Solar Power, Inc. Celula solar que tiene un diodo de derivacion crecido monoliticamente integrado.
DE19921545A1 (de) 1999-05-11 2000-11-23 Angew Solarenergie Ase Gmbh Solarzelle sowie Verfahren zur Herstellung einer solchen
US6864414B2 (en) 2001-10-24 2005-03-08 Emcore Corporation Apparatus and method for integral bypass diode in solar cells
US6680432B2 (en) 2001-10-24 2004-01-20 Emcore Corporation Apparatus and method for optimizing the efficiency of a bypass diode in multijunction solar cells
CN100437221C (zh) * 2005-10-14 2008-11-26 群康科技(深圳)有限公司 液晶显示装置及其制造方法
US9029685B2 (en) 2005-11-18 2015-05-12 The Boeing Company Monolithic bypass diode and photovoltaic cell with bypass diode formed in back of substrate
US20110315220A1 (en) * 2010-06-29 2011-12-29 General Electric Company Photovoltaic cell and methods for forming a back contact for a photovoltaic cell

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3280455T3 (de) * 1981-11-04 2000-07-13 Kanegafuchi Kagaku Kogyo K.K., Osaka Biegsame photovoltaische Vorrichtung.
US4396793A (en) * 1982-04-12 1983-08-02 Chevron Research Company Compensated amorphous silicon solar cell
JPS60240171A (ja) * 1984-05-15 1985-11-29 Mitsubishi Electric Corp 太陽光発電装置
US4697041A (en) * 1985-02-15 1987-09-29 Teijin Limited Integrated solar cells

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EP0327023A3 (en) 1990-05-23
DE68922008D1 (de) 1995-05-11
EP0327023A2 (en) 1989-08-09
EP0327023B1 (en) 1995-04-05
MY104396A (en) 1994-03-31
JPH025575A (ja) 1990-01-10

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