KR890004767B1 - 반도체 기억장치 - Google Patents

반도체 기억장치 Download PDF

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Publication number
KR890004767B1
KR890004767B1 KR1019840007746A KR840007746A KR890004767B1 KR 890004767 B1 KR890004767 B1 KR 890004767B1 KR 1019840007746 A KR1019840007746 A KR 1019840007746A KR 840007746 A KR840007746 A KR 840007746A KR 890004767 B1 KR890004767 B1 KR 890004767B1
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KR
South Korea
Prior art keywords
capacitor
conductivity type
region
type
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
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KR1019840007746A
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English (en)
Korean (ko)
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KR850005734A (ko
Inventor
유끼마사 우치다
Original Assignee
가부시끼 가이샤 도오시바
사바 쇼오이찌
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Application filed by 가부시끼 가이샤 도오시바, 사바 쇼오이찌 filed Critical 가부시끼 가이샤 도오시바
Publication of KR850005734A publication Critical patent/KR850005734A/ko
Application granted granted Critical
Publication of KR890004767B1 publication Critical patent/KR890004767B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

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  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019840007746A 1984-01-20 1984-12-07 반도체 기억장치 Expired KR890004767B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59007958A JPS60152059A (ja) 1984-01-20 1984-01-20 半導体記憶装置
JP59-7958 1984-01-20

Publications (2)

Publication Number Publication Date
KR850005734A KR850005734A (ko) 1985-08-28
KR890004767B1 true KR890004767B1 (ko) 1989-11-25

Family

ID=11679992

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840007746A Expired KR890004767B1 (ko) 1984-01-20 1984-12-07 반도체 기억장치

Country Status (2)

Country Link
JP (1) JPS60152059A (enrdf_load_stackoverflow)
KR (1) KR890004767B1 (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930007522B1 (ko) * 1985-03-08 1993-08-12 가부시끼 가이샤 히다찌세이사꾸쇼 종형 커패시터를 사용한 반도체메모리
JPH0650766B2 (ja) * 1985-09-27 1994-06-29 株式会社東芝 半導体メモリ装置
JPH0650767B2 (ja) * 1985-10-22 1994-06-29 株式会社東芝 半導体記憶装置の製造方法
JPH0682797B2 (ja) * 1985-12-16 1994-10-19 株式会社東芝 半導体装置の製造方法
EP0236089B1 (en) * 1986-03-03 1992-08-05 Fujitsu Limited Dynamic random access memory having trench capacitor
JPS6427252A (en) * 1987-04-13 1989-01-30 Nec Corp Semiconductor storage device
US4794434A (en) * 1987-07-06 1988-12-27 Motorola, Inc. Trench cell for a dram
JP2023042501A (ja) * 2021-09-14 2023-03-27 キオクシア株式会社 半導体装置、保護回路、及び半導体装置の製造方法

Also Published As

Publication number Publication date
JPS60152059A (ja) 1985-08-10
KR850005734A (ko) 1985-08-28
JPH0365664B2 (enrdf_load_stackoverflow) 1991-10-14

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