JPS60152059A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS60152059A
JPS60152059A JP59007958A JP795884A JPS60152059A JP S60152059 A JPS60152059 A JP S60152059A JP 59007958 A JP59007958 A JP 59007958A JP 795884 A JP795884 A JP 795884A JP S60152059 A JPS60152059 A JP S60152059A
Authority
JP
Japan
Prior art keywords
region
capacitor
diffusion region
trench
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59007958A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0365664B2 (enrdf_load_stackoverflow
Inventor
Yukimasa Uchida
内田　幸正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59007958A priority Critical patent/JPS60152059A/ja
Priority to KR1019840007746A priority patent/KR890004767B1/ko
Priority to DE8484115474T priority patent/DE3477532D1/de
Priority to EP84115474A priority patent/EP0169938B1/en
Publication of JPS60152059A publication Critical patent/JPS60152059A/ja
Publication of JPH0365664B2 publication Critical patent/JPH0365664B2/ja
Priority to US07/857,727 priority patent/US5428236A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP59007958A 1983-12-15 1984-01-20 半導体記憶装置 Granted JPS60152059A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59007958A JPS60152059A (ja) 1984-01-20 1984-01-20 半導体記憶装置
KR1019840007746A KR890004767B1 (ko) 1984-01-20 1984-12-07 반도체 기억장치
DE8484115474T DE3477532D1 (en) 1983-12-15 1984-12-14 Semiconductor memory device having trenched capacitor
EP84115474A EP0169938B1 (en) 1983-12-15 1984-12-14 Semiconductor memory device having trenched capacitor
US07/857,727 US5428236A (en) 1983-12-15 1992-03-26 Semiconductor memory device having trenched capicitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59007958A JPS60152059A (ja) 1984-01-20 1984-01-20 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS60152059A true JPS60152059A (ja) 1985-08-10
JPH0365664B2 JPH0365664B2 (enrdf_load_stackoverflow) 1991-10-14

Family

ID=11679992

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59007958A Granted JPS60152059A (ja) 1983-12-15 1984-01-20 半導体記憶装置

Country Status (2)

Country Link
JP (1) JPS60152059A (enrdf_load_stackoverflow)
KR (1) KR890004767B1 (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6273761A (ja) * 1985-09-27 1987-04-04 Toshiba Corp 半導体メモリ装置
JPS6294976A (ja) * 1985-10-22 1987-05-01 Toshiba Corp 半導体記憶装置の製造方法
JPS62141753A (ja) * 1985-12-16 1987-06-25 Toshiba Corp 半導体装置の製造方法
US4794434A (en) * 1987-07-06 1988-12-27 Motorola, Inc. Trench cell for a dram
US4803535A (en) * 1986-03-03 1989-02-07 Fujitus Limited Dynamic random access memory trench capacitor
US4860071A (en) * 1985-03-08 1989-08-22 Hitachi, Ltd. Semiconductor memory using trench capacitor
US4918503A (en) * 1987-04-13 1990-04-17 Nec Corporation Dynamic random access memory device having a plurality of one transistor type memory cells
JP2023042501A (ja) * 2021-09-14 2023-03-27 キオクシア株式会社 半導体装置、保護回路、及び半導体装置の製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4860071A (en) * 1985-03-08 1989-08-22 Hitachi, Ltd. Semiconductor memory using trench capacitor
JPS6273761A (ja) * 1985-09-27 1987-04-04 Toshiba Corp 半導体メモリ装置
JPS6294976A (ja) * 1985-10-22 1987-05-01 Toshiba Corp 半導体記憶装置の製造方法
JPS62141753A (ja) * 1985-12-16 1987-06-25 Toshiba Corp 半導体装置の製造方法
US4803535A (en) * 1986-03-03 1989-02-07 Fujitus Limited Dynamic random access memory trench capacitor
US4918503A (en) * 1987-04-13 1990-04-17 Nec Corporation Dynamic random access memory device having a plurality of one transistor type memory cells
US4794434A (en) * 1987-07-06 1988-12-27 Motorola, Inc. Trench cell for a dram
JP2023042501A (ja) * 2021-09-14 2023-03-27 キオクシア株式会社 半導体装置、保護回路、及び半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0365664B2 (enrdf_load_stackoverflow) 1991-10-14
KR890004767B1 (ko) 1989-11-25
KR850005734A (ko) 1985-08-28

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