KR880006132A - 입자 제조 방법 - Google Patents

입자 제조 방법 Download PDF

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Publication number
KR880006132A
KR880006132A KR870013173A KR870013173A KR880006132A KR 880006132 A KR880006132 A KR 880006132A KR 870013173 A KR870013173 A KR 870013173A KR 870013173 A KR870013173 A KR 870013173A KR 880006132 A KR880006132 A KR 880006132A
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South Korea
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implanted
layer
species
particle
substrate
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KR870013173A
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KR920007822B1 (ko
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카 다인즈 로버트
토마스 쇼트 케니드
엘리자베드 화이트 앨리스
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엘리 와이스
아메리칸 텔리폰 앤드 텔레그라프 캄파니
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Publication of KR880006132A publication Critical patent/KR880006132A/ko
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Publication of KR920007822B1 publication Critical patent/KR920007822B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B25/00—Annealing glass products
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

내용 없음

Description

입자 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 일례의 세층 헤테로에피택셜 구조의 개략도.
제2도는 Co이식 Si매트릭스에 대한 이식 RBS필드의 도시도.
제3도는 열처리 후의 Co이식 Si매트릭스에 대한 이식 RBS필드의 도시도.

Claims (11)

  1. 제1재질 몸체 및, 상기 몸체내에 매립된 제2 재질층으로 이루어진 입자를 제조하는 방법에 있어서, a) 주요면을 가진 단일결정 제1 재질 몸체를 제공하는 단계, b) 매설종 과다층이 형성하도록 몸체의 주요면 아래의 예정된 평균 깊이에서 적어도 한 화학종을 제1 재질 몸체내로 이식하는 단계, c) 매설종 과다층이 제2 재질층 변환되도록 이식된 몸체를 열처리하는데, 제2재질은 제1 재질과 다른 거의 화학량론 성분이고, 이식된 화합종으로 이루어지는 단계 및, d) 입자의 제조를 완료하는 단계로 이루어지는데, e) 상기 이식 및 열처리 조건은 제2 재질층이 매립되는 제1 재질 몸체(10,12)와 에피택셜한 거의 단일 결정층(11)이도록 선택되는 것을 특징으로 하는 입자 제조방법.
  2. 제1항에 있어서, 상기 제1 재질 몸체는 반도체 몸체인 것을 특징으로 하는 입자 제조방법.
  3. 제1항에 있어서, 이온 이식시에, 기판은 방온도 이상의 공칭 온도이며, 이온은 적어도 약 100KeV의 에저지로 이식되는 것을 특징으로 하는 입자 제조방법.
  4. 제2항에 있어서, 반도체 몸체는 실리콘 몸체이며, 화학종은 Co, Ni, Cr, Ti, Y 및 Mg로 이루어진 그룹으로 부터 선택되는 것을 특징으로 하는 입자 제조 방법.
  5. 제4항에 있어서, 이온 이식시에, 기판은 약 300℃ 내지 500℃ 범위의 공칭 온도를 가지며, 이온은 적어도 약 100KeV의 에너지로 이식되며, 단계 C)는 약 800℃ 내지 1100℃ 범위의 온도로 이온 이식 기판을 가열시키는 것을 특징으로 하는 입자 제조방법.
  6. 제4항에 있어서, 제2재질은 0〈X〈1.0인 CoSi2, NiSi2, CrSi2및 CoxNil-xSi2로 이루어진 그룹 부재인 것을 특징으로 하는 입자 제조 방법.
  7. 제2항에 있어서, 입자는 전자소자를 구비하고, 단계 d)는 제2재질층과 전기 접촉하기 위한 수단을 제공하는 것을 특징으로 하는 입자 제조방법.
  8. 제4항에 있어서, 주요면은 적어도 대략(100) 표면인 것을 특징으로 하는 입자 제조방법.
  9. 제2항에 있어서, 반도체 몸체는 Ge 몸체이고, 화학종은 Co 인 것을 특징으로 하는 입자 제조방법.
  10. 제2항에 있어서, 단계 d)는 주요면상의 에피택셜 침전 재질로 이루어지는 것을 특징으로 하는 입자 제조 방법.
  11. 제10항에 있어서, 반도체 몸체는 Si 몸체이고, 에피택셜 침전 재질은 Si 및 GaAs로 이루어진 그룹으로 부터 선택되는 것을 특징으로 하는 입자 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870013173A 1986-11-24 1987-11-23 헤테로 에피택셜 구조의 제조 방법 KR920007822B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US06/934,160 US4816421A (en) 1986-11-24 1986-11-24 Method of making a heteroepitaxial structure by mesotaxy induced by buried implantation
US934160 1986-11-24
US934,160 1986-11-24

Publications (2)

Publication Number Publication Date
KR880006132A true KR880006132A (ko) 1988-07-21
KR920007822B1 KR920007822B1 (ko) 1992-09-17

Family

ID=25465066

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870013173A KR920007822B1 (ko) 1986-11-24 1987-11-23 헤테로 에피택셜 구조의 제조 방법

Country Status (7)

Country Link
US (1) US4816421A (ko)
EP (1) EP0271232B1 (ko)
JP (1) JPH0654770B2 (ko)
KR (1) KR920007822B1 (ko)
CA (1) CA1332695C (ko)
DE (1) DE3789361T2 (ko)
HK (1) HK100594A (ko)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
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US4982263A (en) * 1987-12-21 1991-01-01 Texas Instruments Incorporated Anodizable strain layer for SOI semiconductor structures
US5459346A (en) * 1988-06-28 1995-10-17 Ricoh Co., Ltd. Semiconductor substrate with electrical contact in groove
JPH02170528A (ja) * 1988-12-23 1990-07-02 Toshiba Corp 半導体装置の製造方法
US5075243A (en) * 1989-08-10 1991-12-24 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fabrication of nanometer single crystal metallic CoSi2 structures on Si
US5077228A (en) * 1989-12-01 1991-12-31 Texas Instruments Incorporated Process for simultaneous formation of trench contact and vertical transistor gate and structure
DE4114162A1 (de) * 1990-05-02 1991-11-07 Nippon Sheet Glass Co Ltd Verfahren zur herstellung eines polykristallinen halbleiterfilms
US5236872A (en) * 1991-03-21 1993-08-17 U.S. Philips Corp. Method of manufacturing a semiconductor device having a semiconductor body with a buried silicide layer
US5122479A (en) * 1991-04-11 1992-06-16 At&T Bell Laboratories Semiconductor device comprising a silicide layer, and method of making the device
US5379712A (en) * 1991-08-20 1995-01-10 Implant Sciences Corporation Method of epitaxially growing thin films using ion implantation
JP2914798B2 (ja) * 1991-10-09 1999-07-05 株式会社東芝 半導体装置
DE4136511C2 (de) * 1991-11-06 1995-06-08 Forschungszentrum Juelich Gmbh Verfahren zur Herstellung einer Si/FeSi¶2¶-Heterostruktur
US5290715A (en) * 1991-12-31 1994-03-01 U.S. Philips Corporation Method of making dielectrically isolated metal base transistors and permeable base transistors
EP0603461A3 (en) * 1992-10-30 1996-09-25 Ibm Formation of 3D-structures comprising silicon silicides.
US5963838A (en) * 1993-06-22 1999-10-05 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device having wiring layers within the substrate
US5792679A (en) * 1993-08-30 1998-08-11 Sharp Microelectronics Technology, Inc. Method for forming silicon-germanium/Si/silicon dioxide heterostructure using germanium implant
US5563428A (en) * 1995-01-30 1996-10-08 Ek; Bruce A. Layered structure of a substrate, a dielectric layer and a single crystal layer
US6686274B1 (en) * 1998-09-22 2004-02-03 Renesas Technology Corporation Semiconductor device having cobalt silicide film in which diffusion of cobalt atoms is inhibited and its production process
TW541598B (en) * 2002-05-30 2003-07-11 Jiun-Hua Chen Integrated chip diode
US7052939B2 (en) * 2002-11-26 2006-05-30 Freescale Semiconductor, Inc. Structure to reduce signal cross-talk through semiconductor substrate for system on chip applications
FR2922360A1 (fr) * 2007-10-12 2009-04-17 Soitec Silicon On Insulator Procede de fabrication d'un substrat de type semi- conducteur sur isolant a plan de masse integre.
FR2980636B1 (fr) 2011-09-22 2016-01-08 St Microelectronics Rousset Protection d'un dispositif electronique contre une attaque laser en face arriere, et support semiconducteur correspondant
US8889541B1 (en) 2013-05-07 2014-11-18 International Business Machines Corporation Reduced short channel effect of III-V field effect transistor via oxidizing aluminum-rich underlayer

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US3855009A (en) * 1973-09-20 1974-12-17 Texas Instruments Inc Ion-implantation and conventional epitaxy to produce dielectrically isolated silicon layers
US4554045A (en) * 1980-06-05 1985-11-19 At&T Bell Laboratories Method for producing metal silicide-silicon heterostructures
GB2078441A (en) * 1980-06-17 1982-01-06 Westinghouse Electric Corp Forming impurity regions in semiconductor bodies by high energy ion irradiation
JPS59150419A (ja) * 1983-01-31 1984-08-28 Toshiba Corp 化合物半導体装置の製造方法
JPS59210642A (ja) * 1983-05-16 1984-11-29 Hitachi Ltd 半導体装置の製造方法
JPS60114122A (ja) * 1983-11-28 1985-06-20 松下精工株式会社 観葉植物等の陳列装置
JPS63114122A (ja) * 1986-10-27 1988-05-19 Yokogawa Hewlett Packard Ltd 半導体基板内に導電性領域を製造する方法

Also Published As

Publication number Publication date
JPS63142631A (ja) 1988-06-15
KR920007822B1 (ko) 1992-09-17
HK100594A (en) 1994-09-30
JPH0654770B2 (ja) 1994-07-20
EP0271232B1 (en) 1994-03-16
DE3789361T2 (de) 1994-06-23
CA1332695C (en) 1994-10-25
EP0271232A1 (en) 1988-06-15
DE3789361D1 (de) 1994-04-21
US4816421A (en) 1989-03-28

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