KR980005427A - 반도체 소자의 불순물 이온 주입방법 - Google Patents
반도체 소자의 불순물 이온 주입방법 Download PDFInfo
- Publication number
- KR980005427A KR980005427A KR1019960023458A KR19960023458A KR980005427A KR 980005427 A KR980005427 A KR 980005427A KR 1019960023458 A KR1019960023458 A KR 1019960023458A KR 19960023458 A KR19960023458 A KR 19960023458A KR 980005427 A KR980005427 A KR 980005427A
- Authority
- KR
- South Korea
- Prior art keywords
- ion
- ion implantation
- silicon substrate
- implantation method
- semiconductor device
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 14
- 239000012535 impurity Substances 0.000 title claims abstract description 11
- 239000004065 semiconductor Substances 0.000 title claims abstract description 5
- 238000005468 ion implantation Methods 0.000 title claims abstract 9
- 150000002500 ions Chemical class 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract 7
- 239000010703 silicon Substances 0.000 claims abstract 7
- 239000000758 substrate Substances 0.000 claims abstract 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract 2
- 238000000859 sublimation Methods 0.000 abstract 2
- 230000008022 sublimation Effects 0.000 abstract 2
- 238000000280 densification Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
- Element Separation (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
본 발명은 반도체 소자의 불순물 이온 주입방법을 제공하는 것으로, 불순물 이온의 공유결합을 위한 열처리 공정시 미세균열을 통한 승화현상을 억제하기 위하여 저 에너지에 의한 제1이온의 이온주입공정으로 실리콘기판의 표면으로부터 얕은부분에 주입되도록 하고, 제2이온의 이온주입공정을 고 에너지로 실시할 때 제1이온의 이온주입 공정시 생성된 다수개의 미세균열에 의해 실리콘기판의 표면에서 완충작용으로 실리콘기판의 손상을 감소시킬 수 있으며, 실리콘기판을 열처리할 때 실리콘기판의 표면에서부터 조밀화가 된 후 실리콘기판의 내부에 이온주입된 불순물의 승화현상을 억제하여 판 저항의 변화를 방지하므로써 소자의 특성을 향상시킬 수 있는 효과가 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2a 내지 2c도는 본 발명에 따른 반도체 소자의 불순물 이온 주입 방법을 설명하기 위한 소자의 단면도.
Claims (5)
- 반도체 소자의 불순물 이온 주입방법에 있어서, 실리콘기판의 표면으로부터 얕은 부분에 제1이온을 주입하는 단계와, 상기 단계로부터 실리콘판의 소정깊이에 제2 이온을 주입하는 단계와, 상기 단계로부터 실리콘기판이 열처리공정을 실시하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 불순물 이온 주입방법.
- 제1항에 있어서, 상기 제1이온은 아르곤인 것을 특징으로 하는 반도체 소자의 불순물 이온 주입방법.
- 제1항 또는 제2항에 있어서, 상기 제1이온을 주입하기 위한 에너지는 20 내지 30Kev인 것을 특징으로 하는 반도체 소자의 불순물 이온 주입방법.
- 제1항에 있어서, 상기 제2이온은 3가원소 또는 5가원소중 하나인 것을 특징으로 하는 반도체 소자의 불순물 이온 주입방법.
- 제1항에 있어서, 상기 제2이온은 비소인 것을 특징으로 하는 반도체 소자의 불순물 이온 주입방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960023458A KR100223268B1 (ko) | 1996-06-25 | 1996-06-25 | 반도체 소자의 불순물 이온 주입방법 |
| TW086108099A TW388074B (en) | 1996-06-25 | 1997-06-12 | Method of manufacturing semiconductor device |
| CN97111904A CN1091298C (zh) | 1996-06-25 | 1997-06-25 | 制造半导体器件的方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960023458A KR100223268B1 (ko) | 1996-06-25 | 1996-06-25 | 반도체 소자의 불순물 이온 주입방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR980005427A true KR980005427A (ko) | 1998-03-30 |
| KR100223268B1 KR100223268B1 (ko) | 1999-10-15 |
Family
ID=19463209
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960023458A KR100223268B1 (ko) | 1996-06-25 | 1996-06-25 | 반도체 소자의 불순물 이온 주입방법 |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR100223268B1 (ko) |
| CN (1) | CN1091298C (ko) |
| TW (1) | TW388074B (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8853438B2 (en) * | 2012-11-05 | 2014-10-07 | Dynaloy, Llc | Formulations of solutions and processes for forming a substrate including an arsenic dopant |
| CN116387141B (zh) * | 2023-06-07 | 2023-10-13 | 浙江大学杭州国际科创中心 | 一种低裂纹碳化硅晶圆制备方法及碳化硅晶圆 |
-
1996
- 1996-06-25 KR KR1019960023458A patent/KR100223268B1/ko not_active IP Right Cessation
-
1997
- 1997-06-12 TW TW086108099A patent/TW388074B/zh not_active IP Right Cessation
- 1997-06-25 CN CN97111904A patent/CN1091298C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR100223268B1 (ko) | 1999-10-15 |
| CN1177201A (zh) | 1998-03-25 |
| CN1091298C (zh) | 2002-09-18 |
| TW388074B (en) | 2000-04-21 |
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Payment date: 20090624 Year of fee payment: 11 |
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