KR880004132A - 투명도전막의 제조방법 - Google Patents
투명도전막의 제조방법 Download PDFInfo
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- KR880004132A KR880004132A KR870010164A KR870010164A KR880004132A KR 880004132 A KR880004132 A KR 880004132A KR 870010164 A KR870010164 A KR 870010164A KR 870010164 A KR870010164 A KR 870010164A KR 880004132 A KR880004132 A KR 880004132A
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- South Korea
- Prior art keywords
- conductive film
- indium
- tin
- compound
- transparent conductive
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims 24
- 150000002472 indium compounds Chemical class 0.000 claims 18
- 239000000463 material Substances 0.000 claims 16
- 150000003606 tin compounds Chemical class 0.000 claims 14
- 229910052738 indium Inorganic materials 0.000 claims 10
- 150000003983 crown ethers Chemical class 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 7
- 239000011230 binding agent Substances 0.000 claims 6
- LPNBBFKOUUSUDB-UHFFFAOYSA-N p-toluic acid Chemical compound CC1=CC=C(C(O)=O)C=C1 LPNBBFKOUUSUDB-UHFFFAOYSA-N 0.000 claims 6
- 239000002904 solvent Substances 0.000 claims 6
- ARHIRDSNQLUBHR-UHFFFAOYSA-K 2-ethylhexanoate;indium(3+) Chemical compound [In+3].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O ARHIRDSNQLUBHR-UHFFFAOYSA-K 0.000 claims 4
- 239000002253 acid Substances 0.000 claims 4
- BDOFFEYJSIJAFH-UHFFFAOYSA-K dodecanoate;indium(3+) Chemical compound [In+3].CCCCCCCCCCCC([O-])=O.CCCCCCCCCCCC([O-])=O.CCCCCCCCCCCC([O-])=O BDOFFEYJSIJAFH-UHFFFAOYSA-K 0.000 claims 4
- HBVDRGWGIYKRFQ-UHFFFAOYSA-K indium(3+);octanoate Chemical compound [In+3].CCCCCCCC([O-])=O.CCCCCCCC([O-])=O.CCCCCCCC([O-])=O HBVDRGWGIYKRFQ-UHFFFAOYSA-K 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- KSBAEPSJVUENNK-UHFFFAOYSA-L tin(ii) 2-ethylhexanoate Chemical compound [Sn+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O KSBAEPSJVUENNK-UHFFFAOYSA-L 0.000 claims 4
- LSZKGNJKKQYFLR-UHFFFAOYSA-J tri(butanoyloxy)stannyl butanoate Chemical compound [Sn+4].CCCC([O-])=O.CCCC([O-])=O.CCCC([O-])=O.CCCC([O-])=O LSZKGNJKKQYFLR-UHFFFAOYSA-J 0.000 claims 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- OOWWNOYCDDCVEK-UHFFFAOYSA-L C(C)(=O)[O-].C(C)C(C(=O)[O-])CC.[In+2] Chemical compound C(C)(=O)[O-].C(C)C(C(=O)[O-])CC.[In+2] OOWWNOYCDDCVEK-UHFFFAOYSA-L 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- -1 indium diethylacetoacetate Chemical compound 0.000 claims 2
- OEELZBMMUZVBTR-UHFFFAOYSA-K C(C)(=O)[O-].C(C)OC(C)=O.[In+3].C(C)(=O)[O-].C(C)(=O)[O-] Chemical compound C(C)(=O)[O-].C(C)OC(C)=O.[In+3].C(C)(=O)[O-].C(C)(=O)[O-] OEELZBMMUZVBTR-UHFFFAOYSA-K 0.000 claims 1
- QJTLYPUUVWZDEG-UHFFFAOYSA-N C(C)OC(CC(=O)C)=O.[In] Chemical compound C(C)OC(CC(=O)C)=O.[In] QJTLYPUUVWZDEG-UHFFFAOYSA-N 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- ZAGSCUBGRNEFFM-UHFFFAOYSA-J tris[(4-methylbenzoyl)oxy]stannyl 4-methylbenzoate Chemical compound CC1=CC=C(C(=O)[O-])C=C1.[Sn+4].CC1=CC=C(C(=O)[O-])C=C1.CC1=CC=C(C(=O)[O-])C=C1.CC1=CC=C(C(=O)[O-])C=C1 ZAGSCUBGRNEFFM-UHFFFAOYSA-J 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C20/00—Chemical coating by decomposition of either solid compounds or suspensions of the coating forming compounds, without leaving reaction products of surface material in the coating
- C23C20/06—Coating with inorganic material, other than metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/27—Oxides by oxidation of a coating previously applied
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/23—Mixtures
- C03C2217/231—In2O3/SnO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
- C03C2218/322—Oxidation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도, 제2도는 각각 본 발명의 실시예의 특성을 표시한 특성도이다.
Claims (24)
- 기판상에 투명도전막을 형성하는 제조방법에 있어서, 유기인듐 화합물과 유기주석화합물을 함유하는 도전막재료를 기판상에 형성하고, 그 도전막재료를 열분해한 후, 수증기를 함유한 분위기 속에서 열처리하는 것을 특징으로 하는 투명도전막의 제조방법.
- 제1항에 있어서, 0.6체적%이상의 수증기를 함유한 분위기 속에서 열처리하는 투명도전막의 제조방법.
- 제1항에 있어서, 도전막재료가 유기인듐 화합물과 유기주석화합물을 용매에 용해한 것인 투명도전막의 제조방법.
- 제1항에 있어서, 도전막재료가 유기인듐 화합물과 유기주석화합물과 바인더로 이루어진 것인 투명도전막의 제조방법.
- 제4항에 있어서, 도전막재료가 유기인듐 화합물과 유기주석화합물과 바인더를 용매에 용해한 것인 투명도전막의 제조방법.
- 제1항에 있어서, 수증기를 함유한 분위기가, 산소함유분위기, 불활성분위기 또는 환원 분위기 중 어느 하나인 투명도전막의 제조방법.
- 제1항에 있어서, 유기인듐화합물이, 크라운에테르착제, 인듐디에틸아세트아세테이트모노아세틸아세토나토, 인듐모노에틸아세트아세테이트디아세틸아세토나토, 트리아세틸아세토나토인듐, 트리술프루오로아세틸아세토나토인듐, 인듐알콜레이트아세틸알코나토, 2-에틸헥산산인듐, 옥탄산인듐, 라우릴산인듐, 이소프로필산인듐중에서 선택된 것인 투명도전막의 제조방법.
- 제1항에 있어서, 유기주석화합물이, 크라운에테르착제, 부티르산주석, 2-에틸헥산산주석, 나프텐산주석, P-톨루산주석, 비스아세틸아세토나토디부틸 주석중에서 선택된 것인 투명도전막의 제조방법.
- 기판상에 투명도전막을 형성하는 제조방법에 있어서, 유기인듐 화합물과 유기주석화합물을 용해한 도전막재료를 기판상에 형성하고, 그 도전막재료를 열분해한 후, 0.6체적%이상의 수증기를 함유한 분위기 속에서 열처리하는 것을 특징으로 하는 투명도전막의 제조방법.
- 제9항에 있어서, 도전막재료가 유기인듐 화합물과 유기주석화합물을 용매에 용해하여 바인더를 첨가한 것인 투명도전막의 제조방법.
- 제9항에 있어서, 수증기를 함유한 분위기가, 산소함유분위기, 불활성분위기 또는 환원 분위기 중의 어느 하나인 투명도전막의 제조방법.
- 제9항에 있어서, 유기인듐화합물이, 크라운에테르착제, 인듐디에틸아세토아세테이트 모노아세틸아세토나토, 인듐모노에틸아세트아세테이트디아세틸아세토나토, 트리아세틸아세토나토인듐, 트리술프루오로아세틸아세토나토인듐, 인듐알콜레이트아세틸알코나토, 2-에틸헥산산인듐, 옥탄산인듐, 라우릴산인듐, 이소프로필산인듐중에서 선택된 것인 투명도전막의 제조방법.
- 제9항에 있어서, 유기주석화합물이, 크라운에테르착제, 부티르산주석, 2-에틸헥산산주석, 나프텐산주석, P-톨루산주석, 비스아세틸아세토나토디부틸 주석중에서 선택된 것인 투명도전막의 제조방법.
- 기판상에 투명도전막을 형성하는 제조방법에 있어서, 유기인듐 화합물과 유기주석화합물을 용해한 도전막재료를 기판상에 형성하고, 그 도전막재료를 열분해한 후, 0.6체적%이상의 수증기를 함유한 분위기 속에서 열처리하는 것을 특징으로 하는 투명도전막의 제조방법.
- 제14항에 있어서, 도전막재료가 유기인듐 화합물과 유기주석화합물을 용매에 용해하여 바인더를 첨가한 것인 투명도전막의 제조방법.
- 제14항에 있어서, 유기인듐화합물이, 크라운에테르착제, 인듐디에틸아세토아세테이트 모노아세틸아세토나토, 인듐모노에틸아세트아세테이트디아세틸아세토나토, 트리아세틸아세토나토인듐, 트리술프루오로아세틸아세토나토인듐, 인듐알콜레이트아세틸알코나토, 2-에틸헥산산인듐, 옥탄산인듐, 라우릴산인듐, 이소프로필산인듐중에서 선택된 것인 투명도전막의 제조방법.
- 제14항에 있어서, 유기주석화합물이, 크라운에테르착제, 부티르산주석, 2-에틸헥산산주석, 나프텐산주석, P-톨루산주석, 비스아세틸아세토나토디부틸 주석중에서 선택된 것인 투명도전막의 제조방법.
- 기판상에 투명도전막을 형성하는 제조방법에 있어서, 유기인듐 화합물과 유기주석화합물을 함유하는 도전막재료를 기판상에 형성하고, 그 도전막재료를 열분해한 후, 0.6체적%이상의 수증기를 함유하는 분위기 속에서 열처리하는 것을 특징으로 하는 투명도전막의 제조방법.
- 제18항에 있어서, 도전막재료가 유기인듐 화합물과 유기주석화합물을 용매에 용해한 것인 투명도전막의 제조방법.
- 제18항에 있어서, 도전막재료가 유기인듐 화합물과 유기주석화합물과 바인더로 이루어진 것인 투명도전막의 제조방법.
- 제20항에 있어서, 도전막재료가 유기인듐 화합물과 유기주석화합물과 바인더를 용매에 용해한 것인 투명도전막의 제조방법.
- 제18항에 있어서, 수증기를 함유한 분위기가, 산소함유분위기, 불활성분위기 또는 환원 분위기 중 어느 하나인 투명도전막의 제조방법.
- 제18항에 있어서, 유기인듐화합물이, 크라운에테르착제, 인듐디에틸아세트아세테이트모노아세틸아세토나토, 인듐모노에틸아세토아세테이트디아세틸아세토나토, 트리아세틸아세토나토인듐, 트리술프루오로아세틸아세토나토인듐, 인듐알콜레이트아세틸알코나토, 2-에틸헥산산인듐, 옥탄산인듐, 라우릴산인듐, 이소프로필산인듐중에서 선택된 것인 투명도전막의 제조방법.
- 제18항에 있어서, 유기주석화합물이, 크라운에테르착제, 부티르산주석, 2-에틸헥산산주석, 나프텐산주석, P-톨루산주석, 비스아세틸아세토나토디부틸 주석중에서 선택된 것인 투명도전막의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61-220602 | 1986-09-17 | ||
JP220602 | 1986-09-17 | ||
JP61220602A JP2718023B2 (ja) | 1986-09-17 | 1986-09-17 | 透明導電膜の形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR880004132A true KR880004132A (ko) | 1988-06-01 |
KR910000408B1 KR910000408B1 (ko) | 1991-01-25 |
Family
ID=16753547
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019870010164A KR910000408B1 (ko) | 1986-09-17 | 1987-09-14 | 투명도전막의 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US4888210A (ko) |
EP (1) | EP0261578B1 (ko) |
JP (1) | JP2718023B2 (ko) |
KR (1) | KR910000408B1 (ko) |
DE (1) | DE3769417D1 (ko) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2827226B2 (ja) * | 1988-08-29 | 1998-11-25 | 松下電器産業株式会社 | 透明導電膜の形成方法 |
KR910005090B1 (en) * | 1989-06-02 | 1991-07-22 | Samsung Electronic Devices | Method of making the spacer of display device |
JPH04186229A (ja) * | 1990-11-20 | 1992-07-03 | Matsushita Electric Ind Co Ltd | 補助電極付透明電極およびその製造方法 |
JP3587537B2 (ja) | 1992-12-09 | 2004-11-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP3724592B2 (ja) * | 1993-07-26 | 2005-12-07 | ハイニックス セミコンダクター アメリカ インコーポレイテッド | 半導体基板の平坦化方法 |
GB9421335D0 (en) * | 1994-10-22 | 1994-12-07 | Epichem Ltd | Chemical vapour deposition |
DE69904137T2 (de) * | 1999-02-26 | 2004-03-18 | Agfa-Gevaert | Schicht auf Basis eines leitfähigen Metalloxids |
US6940565B2 (en) * | 2000-08-26 | 2005-09-06 | Lg.Philips Lcd Co., Ltd. | Liquid crystal display device and fabricating method thereof |
US6743488B2 (en) | 2001-05-09 | 2004-06-01 | Cpfilms Inc. | Transparent conductive stratiform coating of indium tin oxide |
JP4857508B2 (ja) * | 2001-09-21 | 2012-01-18 | 株式会社村田製作所 | 金属酸化物膜形成用塗布液 |
JP4932536B2 (ja) * | 2007-02-28 | 2012-05-16 | 株式会社吉野工業所 | 定量繰り出し容器 |
TW200916515A (en) * | 2007-08-02 | 2009-04-16 | Dupont Teijin Films Us Ltd | Coated polyester film |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL6903365A (ko) * | 1969-03-05 | 1970-09-08 | ||
US3676729A (en) * | 1969-06-23 | 1972-07-11 | Sylvania Electric Prod | Arc discharge lamp having a thin continuous film of indium oxide on the inner surface thereof |
US4069357A (en) * | 1976-11-09 | 1978-01-17 | The United States Of America As Represented By The United States Department Of Energy | Process for diffusing metallic coatings into ceramics to improve their voltage withstanding capabilities |
JPS54130497A (en) * | 1978-03-31 | 1979-10-09 | Agency Of Ind Science & Technol | Production of indium oxide ( ) film |
JPS54150417A (en) * | 1978-05-19 | 1979-11-26 | Hitachi Ltd | Production of transparent conductive layer |
JPS5923403B2 (ja) * | 1978-06-16 | 1984-06-01 | セイコーエプソン株式会社 | 透明導電膜の製造方法 |
US4325987A (en) * | 1979-07-31 | 1982-04-20 | Societa Italiana Vetro-Siv-S.P.A. | Process for the production of an electrically conducting article |
DE3133871A1 (de) * | 1981-08-27 | 1983-03-10 | M.A.N. Maschinenfabrik Augsburg-Nürnberg AG, 8000 München | Verfahren zur herstellung homogener beschichtungen aus zwei oder mehreren metallen und/oder metallverbindungen |
DE3266579D1 (en) * | 1981-11-25 | 1985-10-31 | Secr Defence Brit | Organometallic adducts |
DE3300589A1 (de) * | 1983-01-11 | 1984-07-12 | Schott Glaswerke, 6500 Mainz | Verfahren zur herstellung von indiumoxid-zinnoxid-schichten |
DE3324647A1 (de) * | 1983-07-08 | 1985-01-17 | Schott Glaswerke, 6500 Mainz | Tauchverfahren zur herstellung transparenter, elektrisch leitfaehiger, dotierter indiumoxidschichten |
-
1986
- 1986-09-17 JP JP61220602A patent/JP2718023B2/ja not_active Expired - Fee Related
-
1987
- 1987-09-14 KR KR1019870010164A patent/KR910000408B1/ko not_active IP Right Cessation
- 1987-09-16 US US07/097,474 patent/US4888210A/en not_active Expired - Lifetime
- 1987-09-16 EP EP87113556A patent/EP0261578B1/en not_active Expired - Lifetime
- 1987-09-16 DE DE8787113556T patent/DE3769417D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4888210A (en) | 1989-12-19 |
JP2718023B2 (ja) | 1998-02-25 |
KR910000408B1 (ko) | 1991-01-25 |
JPS6376212A (ja) | 1988-04-06 |
EP0261578B1 (en) | 1991-04-17 |
DE3769417D1 (de) | 1991-05-23 |
EP0261578A1 (en) | 1988-03-30 |
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