KR890005919A - Cd₁-xZnxS 소격막의 제조 방법 - Google Patents

Cd₁-xZnxS 소격막의 제조 방법 Download PDF

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KR890005919A
KR890005919A KR870010623A KR870010623A KR890005919A KR 890005919 A KR890005919 A KR 890005919A KR 870010623 A KR870010623 A KR 870010623A KR 870010623 A KR870010623 A KR 870010623A KR 890005919 A KR890005919 A KR 890005919A
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zncl2
atmosphere
xznxs
sputum
manufacturing
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KR870010623A
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KR900000534B1 (ko
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임호빈
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이정오
한국과학기술원
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Priority to KR1019870010623A priority Critical patent/KR900000534B1/ko
Priority to US07/170,326 priority patent/US4828875A/en
Publication of KR890005919A publication Critical patent/KR890005919A/ko
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Publication of KR900000534B1 publication Critical patent/KR900000534B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C03C2217/287—Chalcogenides
    • C03C2217/288—Sulfides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/17—Deposition methods from a solid phase
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
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  • Chemical & Material Sciences (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
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  • Organic Chemistry (AREA)
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  • Photovoltaic Devices (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

내용 없음

Description

Cd1-xZnxS 소격막의 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 Cd1-xZnxS 소결막의 제조 장치.
제2도는 기준의 방법과 본 발명의 방법으로 제조된 Cd1-xZnxS 소격막의 광투과율 비교도.

Claims (3)

  1. CdS 분말이나 CdS와 ZnS의 혼합 분막에 CdCl₂를 첨가한 반죽을 기판에 도포하고 소결하여 Cd1-xZnxS(0〈x〈1) 박막을 제조함에 있어서, 소결분위기로서 ZnCl₂증기가 혼입된 불활성 가스를 사용하는 것을 특징으로 하는 Cd1-xZnxS 소결막의 제조방법.
  2. 제 1 항에 있어서, ZnCl₂분위기의 형성을 위한 ZnCl₂의 가열 온도를 400℃이상, 통상 500-700℃의 시편의 온도 이하로 하는 것을 특징으로 하는 방법.
  3. 제 1 항 또는 제 2 항에 있어서, 제도된 Cd1-xZnxS 박막을 불활성 분위기에서 다시 소결하는 것을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870010623A 1987-09-25 1987-09-25 Cd₁_xZnxS 소결막의 제조방법 KR900000534B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1019870010623A KR900000534B1 (ko) 1987-09-25 1987-09-25 Cd₁_xZnxS 소결막의 제조방법
US07/170,326 US4828875A (en) 1987-09-25 1988-03-18 Process for the production of sintered films of Cd1-x Znx S

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019870010623A KR900000534B1 (ko) 1987-09-25 1987-09-25 Cd₁_xZnxS 소결막의 제조방법

Publications (2)

Publication Number Publication Date
KR890005919A true KR890005919A (ko) 1989-05-17
KR900000534B1 KR900000534B1 (ko) 1990-01-31

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Application Number Title Priority Date Filing Date
KR1019870010623A KR900000534B1 (ko) 1987-09-25 1987-09-25 Cd₁_xZnxS 소결막의 제조방법

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US (1) US4828875A (ko)
KR (1) KR900000534B1 (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NZ309980A (en) * 1995-06-07 2001-06-29 Noven Pharma Transdermal composition containing a blend of one or more polymers, one or more drugs that has a low molecular weight and is liquid at room temperature
US5986206A (en) * 1997-12-10 1999-11-16 Nanogram Corporation Solar cell
WO2008151204A1 (en) * 2007-06-04 2008-12-11 Sequent Medical Inc. Methods and devices for treatment of vascular defects
TW201121089A (en) * 2009-10-13 2011-06-16 First Solar Inc Method of annealing cadmium telluride photovoltaic device

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KR900000534B1 (ko) 1990-01-31
US4828875A (en) 1989-05-09

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